IP Library Granted Patent US 8,936,970
Granted Patent B2
US 8,936,970 · App. 13/227,841 · Granted Jan 20, 2015

Light emitting structure having electrodes and manufacturing method thereof

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Quick Facts
Patent No.
US 8,936,970
App. No.
13/227,841
Granted
Jan 20, 2015
Kind
B2
Abstract

A light-emitting structure comprises a semiconductor light-emitting element which includes a first connection point and a second connection point. The light-emitting structure further includes a first electrode electrically connected to the first connection point, and a second electrode electrically connected the second connection point. The first electrode and the second electrode can form a concave on which the semiconductor light-emitting element is located.

Claims (13)

1. A method of manufacturing a light-emitting structure, comprising the steps of:

providing a carrier;

providing a plurality of semiconductor light-emitting elements on the carrier;

forming a glue layer on a side wall of each of the semiconductor light emitting elements, wherein the glue layer has a surface;

forming a metal layer on the glue layer and the semiconductor light-emitting elements, wherein the metal layer has a corresponding surface facing the surface; and

patterning the metal layer for forming a plurality of grooves and a plurality of electrodes corresponding to the semiconductor light-emitting elements.

2. The method of manufacturing a light-emitting structure as claimed in claim 1 , wherein each of the semiconductor light-emitting elements comprises a base.

3. The method of manufacturing a light-emitting structure as claimed in claim 1 , further comprising a step of removing the carrier.

4. The method of manufacturing a light-emitting structure as claimed in claim 1 , wherein the carrier comprises a plurality of convex portions and a plurality of channel portions, and the semiconductor light-emitting elements are formed on the convex portions correspondingly.

5. The method of manufacturing a light-emitting structure as claimed in claim 4 , wherein the glue layer is formed on the convex portions and covers the side wall of each of the semiconductor light-emitting elements.

6. The method of manufacturing a light-emitting structure as claimed in claim 1 , further comprising a step of removing the glue layer for exposing the corresponding surface, wherein the corresponding surface comprises a concave on which the semiconductor light-emitting elements are located.

7. The method of manufacturing a light-emitting structure as claimed in claim 6 , further comprising a step of filling insulating material into the grooves.

8. The method of manufacturing a light-emitting structure as claimed in claim 6 , comprising a step of forming a wavelength conversion layer, an encapsulation layer, or both thereof on at least one of the semiconductor light-emitting elements.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 17, 2025
From: EPISTAR CORPORATION
To: TAU CETI VENTURES LLC
Reel/Frame 073969/0972 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 8, 2011
From: HSU, CHIA-LIANG
To: EPISTAR CORPORATION
Reel/Frame 026872/0628 →