Multi-mode bulk-acoustic-wave resonators
The various embodiments of the present disclosure relate generally bulk-acoustic-wave resonators. An exemplary embodiment of the present invention provides a bulk-acoustic-wave resonator comprising an acoustic reflector, a substantially c-axis oriented hexagonal crystal structure, and a plurality of electrodes. The crystal structure is solidly-mounted to the acoustic reflector. The bulk-wave resonator resonates in at least two non-harmonically-related operational modes.
1. A bulk-acoustic-wave resonator, comprising:
an acoustic reflector;
a substantially c-axis oriented hexagonal crystal structure solidly-mounted to the acoustic reflector; and
a plurality of electrodes positioned about the hexagonal crystal structure,
wherein the bulk-acoustic-wave resonator is resonating in at least two non-harmonically-related operational modes,
wherein the plurality of electrodes comprise:
a signal electrode positioned on a surface of the acoustic reflector, such that at least a portion of the signal electrode is substantially between at least a portion of the acoustic reflector and at least a portion of the hexagonal crystal structure;
a first ground electrode positioned on the surface of the acoustic reflector, such that at least a portion of the first ground electrode is substantially between at least a second portion of the acoustic reflector and at least a second portion of the hexagonal crystal structure; and
a second ground electrode positioned on the surface of the acoustic reflector, such that at least a portion of the second ground electrode is substantially between at least a third portion of the acoustic reflector and at least a third portion of the hexagonal crystal structure.
2. The bulk-acoustic-wave resonator of claim 1 , wherein the acoustic reflector comprises at least two alternating layers of a first material and a second material, wherein the second material has an acoustic impedance greater than the first material.
3. The bulk-acoustic-wave resonator of claim 1 , wherein the at least two non-harmonically-related operational modes comprise:
a thickness-shear mode operating at a first resonant frequency; and
a longitudinal-thickness-extension mode operating at a second resonant frequency, wherein the first resonant frequency is non-harmonically-related to the second resonant frequency.
4. The bulk-acoustic-wave resonator of claim 3 , wherein the at least two-non-harmonically-related operational modes further comprise a hybrid mode operating at a third resonant frequency, wherein the third resonant frequency is non-harmonically related to the first and second resonant frequencies.
5. The bulk-acoustic-wave resonator of claim 4 , wherein the third resonant frequency is greater than the first resonant frequency and the second resonant frequency is greater than the third resonant frequency.
6. The bulk-acoustic-wave resonator of claim 1 , further comprising a floating plate positioned on a surface of the hexagonal crystal structure.
7. The bulk-acoustic-wave resonator of claim 1 , wherein the hexagonal crystal structure is a piezoelectric hexagonal crystal structure.
8. A bulk-acoustic-wave resonator, comprising:
an acoustic reflector;
a hexagonal crystal structure solidly-mounted to the acoustic reflector; and
a plurality of electrodes positioned about the hexagonal crystal structure,
wherein the bulk-acoustic-wave resonator is resonating in at least three non-harmonically-related operational modes, and
wherein the plurality of electrodes comprise:
a signal electrode positioned on a top surface of the acoustic reflector, such that at least a portion of the signal electrode is substantially between at least a portion of the acoustic reflector and at least a portion of the hexagonal crystal structure;
a first ground electrode positioned on the top surface of the acoustic reflector, such that at least a portion of the first ground electrode is substantially between at least a second portion of the acoustic reflector and at least a second portion of the hexagonal crystal structure; and
a second ground electrode positioned on the top surface of the acoustic reflector, such that at least a portion of the second ground electrode is substantially between at least a third portion of the acoustic reflector and at least a third portion of the hexagonal crystal structure.
9. The bulk-acoustic-wave resonator of claim 8 , wherein the acoustic reflector comprises at least two alternating layers of a first material and a second material, wherein the second material has an acoustic impedance greater than the first material.
10. The bulk-acoustic-wave resonator of claim 8 , wherein the at least three non-harmonically-related operational modes comprise:
a thickness-shear mode operating at a first resonant frequency;
a longitudinal-thickness-extension mode operating at a second resonant frequency, wherein the first resonant frequency is non-harmonically-related to the second resonant frequency; and
a hybrid mode operating at a third resonant frequency, wherein the third resonant frequency is non-harmonically related to the first and second resonant frequencies.
11. The bulk-acoustic-wave resonator of claim 10 , wherein the third resonant frequency is greater than the first resonant frequency and the second resonant frequency is greater than the third resonant frequency.
12. The bulk-acoustic-wave resonator of claim 8 , further comprising a floating plate positioned on a top surface of the hexagonal crystal structure.
13. The bulk-acoustic-wave resonator of claim 8 , wherein the hexagonal crystal structure is a piezoelectric hexagonal crystal structure.
14. A method of using a bulk-acoustic-wave resonator, the bulk-wave resonator comprising an acoustic reflector, a substantially c-axis oriented hexagonal crystal structure solidly-mounted to the acoustic reflector, and a plurality of electrodes positioned about the hexagonal crystal structure, wherein the plurality of electrodes comprises a signal electrode positioned on a top surface of the acoustic reflector, such that at least a portion of the signal electrode is substantially between at least a portion of the acoustic reflector and at least a portion of the hexagonal crystal structure, a first ground electrode positioned on the top surface of the acoustic reflector, such that at least a portion of the first ground electrode is substantially between at least a second portion of the acoustic reflector and at least a second portion of the hexagonal crystal structure, and a second ground electrode positioned on the top surface of the acoustic reflector, such that at least a portion of the second ground electrode is substantially between at least a third portion of the acoustic reflector and at least a third portion of the hexagonal crystal structure, the method comprising:
resonating the bulk-acoustic-wave resonator at a first operational mode with a first resonant frequency; and
resonating the bulk-acoustic-wave resonator at a second operational mode with a second resonant frequency,
wherein the first resonant frequency and the second resonant frequency are non-harmonically related.
15. The method of claim 14 , wherein the first operation mode is a thickness-shear-mode and the second operation mode is a longitudinal-thickness-extension mode.
16. The method of claim 14 , further comprising resonating the bulk-acoustic-wave resonator at a third operational mode having a third resonant frequency, wherein the third resonant frequency is non-harmonically related to the first and second resonant frequencies.
17. The method of claim 16 , wherein the third operation mode is a hybrid mode.
18. The method of claim 14 , further comprising exposing at least a portion of the bulk-acoustic-wave resonator to a liquid to assist in determining a characteristic of the liquid.
19. The method of claim 14 , further comprising exposing at least a portion of the bulk-acoustic-wave resonator to a vapor to assist in determining a characteristic of the vapor.
20. The method of using a bulk-acoustic-wave resonator of claim 14 , wherein the hexagonal crystal structure is a piezoelectric hexagonal crystal structure.