Package for high power devices
A semiconductor device package is formed of DBC in which thinned MOSgated and/or diode die are soldered to the bottom of an etched depression in the upper conductive layer. A via in the insulation layer of the DBC is filled with a conductive material to form a resistive shunt. Plural packages may be formed in a DBC card and may be separated individually or in clusters. The individual packages are mounted in various arrays on a support DBC board and heat sink. Integrated circuits may be mounted on the assembly and connected to the die for control of the die conduction.
1. A semiconductor device package comprising:
a semiconductor die having first and second parallel surfaces and a support can;
said support can comprising an insulation body having top and bottom parallel surfaces with corresponding top and bottom conductive layers;
said top conductive layer having a depression therein defining a web surface and a rim portion extending around at least a portion of the periphery of said web surface;
said web surface having a plurality of dimples formed therein defining a perimeter of a desired location for said semiconductor die;
said semiconductor die being disposed in said desired location in said depression.
2. The semiconductor device package of claim 1 , wherein said semiconductor die is a silicon MOSgated device.
3. The semiconductor device package of claim 1 , wherein said semiconductor die is an IGBT.
4. The semiconductor device package of claim 1 further comprising an electrode on at least one of said first and said second parallel surfaces of said semiconductor die, said electrode being mechanically and electrically fixed to said web surface.
5. The semiconductor device package of claim 4 , wherein said electrode is a drain electrode.
6. The semiconductor device package of claim 4 , wherein said electrode is a source electrode.
7. The semiconductor device package of claim 4 , wherein said electrode is a bump contact.
8. The semiconductor device package of claim 4 , wherein said electrode is a solderable pad.
9. The semiconductor device package of claim 1 , wherein said rim portion has a general U shape.
10. The semiconductor device package of claim 1 , wherein said support can is a DBC wafer.
11. The semiconductor device package of claim 1 , wherein said insulation body is ceramic.
12. The semiconductor device package of claim 1 , wherein said top and bottom conductive layers comprise copper.
13. The semiconductor device package of claim 4 , wherein said electrode is soldered to a surface of said depression.
14. The semiconductor device package of claim 1 , wherein said rim portion is open at its opposite ends.
15. The semiconductor device package of claim 1 further comprising a heat sink being electrically and mechanically fixed to said bottom conductive layer.
16. The semiconductor device package of claim 15 further comprising fluid coolant channels in said heat sink.
17. The semiconductor device package of claim 1 further comprising at least one via in said insulation body.
18. The semiconductor device package of claim 4 further comprising an integrated circuit device having at least one terminal connected to said electrode.