Microstructure modification in copper interconnect structures
View Patent ↗A metal interconnect structure and a method of manufacturing the metal interconnect structure. Manganese (Mn) is incorporated into a copper (Cu) interconnect structure in order to modify the microstructure to achieve bamboo-style grain boundaries in sub-90 nm technologies. Preferably, bamboo grains are separated at distances less than the “Blech” length so that copper (Cu) diffusion through grain boundaries is avoided. The added Mn also triggers the growth of Cu grains down to the bottom surface of the metal line so that a true bamboo microstructure reaching to the bottom surface is formed and the Cu diffusion mechanism along grain boundaries oriented along the length of the metal line is eliminated.
1. A metal interconnect structure, comprising:
a dielectric material layer containing a recessed line pattern;
a metallic barrier layer abutting the dielectric material layer at sidewalls of the recessed line pattern and overlying an entirety of the dielectric material layer;
a copper-containing seed layer abutting the metallic barrier layer and overlying an entirety of the dielectric material layer; and
a copper-containing layer comprising electroplated copper and abutting the copper-containing seed layer,
wherein at least one of the copper-containing seed layer and the copper-containing layer comprises a copper-manganese alloy, and
wherein the copper-containing seed layer and the copper-containing layer form a bamboo grain within the recessed line pattern, the grain size measured at a bottom surface of the copper-containing layer exceeding a width of the copper-manganese alloy line at least every “Blech” length.
2. The structure of claim 1 , wherein the copper-containing layer comprises O, N, C, Cl and S, a sum of concentrations of which ranges from about 1 ppm to about 200 ppm.
3. The structure of claim 1 , wherein at least one of the copper-containing seed layer and the copper-containing layer contains a manganese concentration from about 1 ppm to about 10 atomic percent.
4. The structure of claim 1 , wherein the copper-manganese alloy contains a manganese concentration from about 10 ppm to about 2 atomic percent.
5. The structure of claim 1 , wherein the copper-containing seed layer comprises a copper-manganese alloy containing a manganese concentration from about 1 ppm to about 10 atomic percent and has a thickness from about 2 nm to about 60 nm.
6. The structure of claim 1 , wherein the copper-containing layer comprises a copper-manganese alloy containing a manganese concentration from about 1 ppm to about 10 atomic percent and has a thickness from about 40 nm to about 800 nm above a portion of the dielectric material layer located outside the recessed line pattern.
7. A metal interconnect structure, comprising:
a dielectric material layer containing a recessed line pattern;
a metallic barrier layer abutting the dielectric material layer at sidewalls of the recessed line pattern and overlying an entirety of the dielectric material layer;
a copper-containing seed layer abutting the metallic barrier layer and overlying an entirety of the dielectric material layer;
a copper-containing layer comprising electroplated copper and abutting the copper-containing seed layer,
wherein the copper-containing seed layer and the copper-containing layer form a bamboo grain within the recessed line pattern, the grain size measured at a bottom surface of the copper-containing layer exceeding a width of the copper-manganese alloy line at least every “Blech” length; and
a copper-manganese alloy cap layer abutting the copper-containing layer.
8. The structure of claim 7 , wherein the copper-containing layer comprises O, N, C, Cl, and S, a sum of concentrations of which is from about 1 ppm to about 200 ppm.
9. The structure of claim 8 , wherein the copper-manganese alloy contains a manganese concentration from about 10 ppm to about 20 atomic percent.
10. The structure of claim 7 , wherein the copper-manganese alloy cap layer contains a manganese concentration from about 1 ppm to about 50 atomic percent.