IP Library Granted Patent US 8,797,123
Granted Patent B2
US 8,797,123 · App. 13/232,213 · Granted Aug 5, 2014

Double film bulk acoustic resonator having electrode edge alignments providing improved quality factor or electromechanical coupling coefficient

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Quick Facts
Patent No.
US 8,797,123
App. No.
13/232,213
Granted
Aug 5, 2014
Kind
B2
Abstract

An acoustic resonator comprises a substrate having a trench with lateral boundaries, a first electrode formed on the substrate over the trench and having lateral edges that are laterally offset from the lateral boundaries of the trench by a first distance, a first piezoelectric layer formed on the first electrode, a second electrode formed on the first piezoelectric layer and having edges that are laterally aligned inside the lateral boundaries of the trench, a second piezoelectric layer located on the second electrode, and a third electrode located on the second piezoelectric layer and having edges that are laterally offset from the edges of the second electrode.

Claims (37)

1. An acoustic resonator, comprising:

a substrate having a trench with lateral boundaries;

a first electrode formed on the substrate over the trench and having lateral edges that are laterally offset from the lateral boundaries of the trench by a first distance;

a first piezoelectric layer formed on the first electrode;

a second electrode formed on the first piezoelectric layer and having edges that are laterally aligned inside the lateral boundaries of the trench;

a second piezoelectric layer located on the second electrode; and

a third electrode located on the second piezoelectric layer and having edges that are laterally offset from the edges of the second electrode by a second distance, wherein the first, second, and third electrodes have lateral edges defining one of a Δ configuration, a ∇ configuration, or a Ξ configuration.

2. The acoustic resonator of claim 1 , wherein the edges of the first electrode are laterally aligned outside lateral boundaries of the trench.

3. The acoustic resonator of claim 1 , wherein the second distance is greater than or equal to approximately 0.5% of a width of the trench.

4. The acoustic resonator of claim 1 , wherein the second distance is approximately 2 microns and the width of the trench is approximately 200 microns.

5. The acoustic resonator of claim 1 , wherein the first and second distances are between 0.5 microns and 5 microns.

6. The acoustic resonator of claim 1 , wherein the lateral edges define a Ξ configuration, and the lateral edges of the first and third electrodes are aligned with each other.

7. The acoustic resonator of claim 1 , further comprising a first planarization layer formed adjacent to the first electrode, and a second planarization layer formed adjacent to the second electrode.

8. The acoustic resonator of claim 1 , wherein the trench comprises an air gap or an acoustic reflector.

9. The acoustic resonator of claim 1 , further comprising a first terminal connected to the first and third electrodes, and a second terminal connected to the second terminal, wherein the first and second terminals are configured to apply an electrical field across the first and second piezoelectric layers to operate the acoustic resonator.

10. The acoustic resonator of claim 1 , wherein the first and second distances are chosen to provide the acoustic resonator with a local maximum value of parallel resistance or electromechanical coupling coefficient.

11. The acoustic resonator of claim 1 , wherein the edges of the first electrode are laterally aligned outside lateral boundaries of the trench.

12. The acoustic resonator of claim 1 , wherein the edges of the third electrode are located inside of the edges of the second electrode.

13. The acoustic resonator of claim 1 , wherein the edges of the third electrode are located outside the edges of the second electrode.

14. The acoustic resonator of claim 1 , wherein the second distance approximately 0.5% to approximately 1.0% of the width of the trench.

15. A device, comprising:

a first terminal;

a first acoustic resonator comprising a first electrode, a second electrode, and a first piezoelectric layer extending between the first and second electrodes;

a second acoustic resonator comprising the second electrode, a third electrode, and a second piezoelectric layer extending between the second and third electrodes; and

a second terminal,

wherein the first terminal is connected to the first and third electrodes and the second terminal is connected to the second electrode such that the first and second acoustic resonators are configured to operate in parallel with each other, and

wherein the first through third electrodes each have lateral edges that are offset from lateral edges of the other electrodes and the first, second, and third electrodes have lateral edges defining one of a Δ configuration, a ∇ configuration, or a Ξ configuration.

16. The device of claim 15 , wherein the first through third electrodes each have lateral edges that are offset from lateral edges of the other electrodes by an amount greater than or equal to approximately 0.5% of their respective widths.

17. The device of claim 15 , further comprising a substrate having a trench with lateral boundaries formed below the first electrode, wherein the lateral edges of the first electrode are located outside the lateral boundaries of the trench, and the lateral edges of the second electrode are located inside the lateral boundaries of the trench.

18. The device of claim 17 , wherein the lateral edges of the second and third electrodes are offset from each other by approximately 0.5-4 microns and the trench has a width of approximately 100-200 microns.

19. An acoustic resonator, comprising:

a substrate having a trench with lateral boundaries;

a first electrode formed on the substrate over the trench and having lateral edges that are laterally offset from the lateral boundaries of the trench by a first distance;

a first piezoelectric layer formed on the first electrode;

a second electrode formed on the first piezoelectric layer and having edges that are laterally aligned inside the lateral boundaries of the trench;

a second piezoelectric layer located on the second electrode; and

a third electrode located on the second piezoelectric layer and having edges that are laterally offset from the edges of the second electrode by a second distance greater than or equal to approximately 0.5% of a width of the trench.

Assignments (9)
CORRECTIVE ASSIGNMENT TO CORRECT THE ERROR IN RECORDING THE MERGER IN THE INCORRECT US PATENT NO. 8,876,094 PREVIOUSLY RECORDED ON REEL 047351 FRAME 0384. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER. Recorded Mar 8, 2019
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 049248/0558 →
CORRECTIVE ASSIGNMENT TO CORRECT THE EFFECTIVE DATE OF THE MERGER PREVIOUSLY RECORDED AT REEL: 047230 FRAME: 0910. ASSIGNOR(S) HEREBY CONFIRMS THE MERGER. Recorded Oct 29, 2018
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 047351/0384 →
MERGER Recorded Oct 4, 2018
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
Reel/Frame 047230/0910 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENTS Recorded Feb 3, 2017
From: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 041710/0001 →
PATENT SECURITY AGREEMENT Recorded Feb 11, 2016
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Reel/Frame 037808/0001 →
TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS (RELEASES RF 032851-0001) Recorded Feb 2, 2016
From: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
Reel/Frame 037689/0001 →
PATENT SECURITY AGREEMENT Recorded May 8, 2014
From: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
To: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT
Reel/Frame 032851/0001 →
MERGER Recorded May 7, 2013
From: AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD.
To: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
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ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 14, 2011
From: BURAK, DARIUSZ; FENG, CHRIS; BADER, STEFAN
To: AVAGO TECHNOLOGIES WIRELESS IP (SINGAPORE) PTE. LTD.
Reel/Frame 026903/0490 →