Ferro-electric device and modulatable injection barrier
Described is a modulatable injection barrier and a semiconductor element comprising same. More particularly, the invention relates to a two-terminal, non-volatile programmable resistor. Such a resistor can be applied in non-volatile memory devices, and as an active switch e.g. in displays. The device comprises, in between electrode layers, a storage layer comprising a blend of a ferro-electric material and a semiconductor material. Preferably both materials in the blend are polymers.
1. A semiconductor element comprising at least one modulatable injection barrier, said barrier being formed between a first electrode layer of a first electrode and a semiconductor layer, wherein the semiconductor layer is interposed between the first electrode and a second electrode,
wherein the semiconductor layer comprises a blend of a semiconductor polymer and a ferro-electric dielectric polymer, the blend comprising:
a ferro-electric dielectric polymer structure, extending between the first and second electrodes, and the ferro-electric dielectric polymer being in an amount within the blend sufficient to allow that a polarization charge can be measured, and
a semiconductor polymer path, extending between the first and second electrodes, for travel of charge carriers flowing as a current through the semiconductor layer between the first and second electrodes,
wherein the semiconductor layer is made up primarily of the ferro-electric dielectric polymer structure, and the semiconductor polymer path comprises portions of the semiconductor layer wherein holes within the ferro-electric dielectric polymer structure are filled with semiconductor polymer material providing a continuous semiconductor path between the first electrode and second electrode.
2. The element according to claim 1 , wherein the blend comprises the ferro-electric dielectric polymer and the semiconductor polymer in a ratio, by weight, within a range from 1:1 to 1000:1.
3. An element according to claim 1 , wherein the blend comprises the ferro-electric dielectric polymer and the semiconductor polymer in a ratio, by weight, within a range from 10:1 to 100:1.
4. A device comprising at least one semiconductor element, the semiconductor element comprising at least one modulatable injection barrier, said modulatable injection barrier being formed between a first electrode layer of a first electrode and a semiconductor layer, wherein the semiconductor layer is interposed between the first electrode and a second electrode,
wherein the semiconductor layer comprises a blend of a semiconductor polymer and a ferro-electric dielectric polymer, the blend comprising:
a ferro-electric dielectric polymer structure, extending between the first and second electrodes, and the ferro-electric dielectric polymer being in an amount within the blend sufficient to allow that a polarization charge can be measured, and
a semiconductor polymer path, extending between the first and the second electrodes, for travel of charge carriers flowing as a current through the semiconductor layer between the first and second electrodes,
wherein the semiconductor layer is made up primarily of the ferro-electric dielectric polymer structure, and the semiconductor polymer path comprises portions of the semiconductor layer wherein holes within the ferro-electric dielectric polymer structure are filled with semiconductor polymer material providing a continuous semiconductor path between the first electrode and second electrode.
5. The device according to claim 4 , wherein the first and second electrodes are made of metals that do not form Ohmic contacts with the semiconductor polymer.
6. The device according to claim 4 , built up so as to have crossing bars of electrodes connected to the first and second electrodes.
7. The use of a device according to claim 4 , wherein the modulatable injection barrier serves to program a memory device, to select a switch position, or to reverse a diode.
8. The use of a device according to claim 4 , wherein the modulatable injection barrier serves to switch on or off the injection of one type of charge carrier (electrons or holes) into a light-emitting semiconducting layer.
9. The device according to claim 4 , wherein the blend comprises the ferro-electric dielectric polymer and the semiconductor polymer in a ratio, by weight, within a range from 1:1 to 1000:1.
10. A rectifying organic or polymeric memory device comprising a modulatable injection barrier, said modulatable injection barrier being formed between a first electrode layer of a first electrode and a semiconductor layer, wherein the semiconductor layer is interposed between the first electrode and a second electrode,
wherein the semiconductor layer comprises a blend of a semiconductor polymer and a ferro-electric dielectric polymer, the blend comprising:
a ferro-electric dielectric polymer structure, extending between the first and second electrodes, and the ferro-electric dielectric polymer being in an amount within the blend sufficient to allow that a polarization charge can be measured, and
a semiconductor polymer path, extending between the first and second electrodes, for travel of charge carriers flowing as a current through the semiconductor layer between the first and second electrodes,
wherein the semiconductor layer is made up primarily of the ferro-electric dielectric polymer structure, and the semiconductor polymer path comprises portions of the semiconductor layer wherein holes within the ferro-electric dielectric polymer structure are filled with semiconductor polymer material providing a continuous semiconductor path between the first electrode and second electrode.
11. The device according to claim 10 , wherein the blend comprises the ferro-electric dielectric polymer and the semiconductor polymer in a ratio, by weight, within a range from 1:1 to 1000:1.