Optical arrangement in a projection objective of a microlithographic projection exposure apparatus
View Patent ↗The disclosure relates to an optical arrangement in a projection objective of a microlithographic projection exposure apparatus which is designed for operation in EUV. The optical arrangement includes first and second mirrors that are in direct succession to each other along the projection beam direction. The second mirror is rigidly connected to the first mirror.
1. An optical arrangement, compriseing:
a first mirror; and
a second mirror rigidly connected to the first mirror,
wherein:
during use, light travels through the optical arrangement along a path;
the first and second mirrors are in direct succession to each other along the path;
the first mirror has a through hole along the path;
the second mirror has a through hole along the path;
the optical arrangement has a lowest natural frequency which is 20% greater than a lowest natural frequency of a corresponding optical arrangement without a rigid connection between the first and second mirrors; and
the optical arrangement is configured to be used in a microlithographic EUV projection objective.
2. The optical arrangement of claim 1 , wherein the first and second mirrors are in a monolithic configuration.
3. The optical arrangement of claim 1 , further comprising a ring that connects the first and second mirrors.
4. The optical arrangement of claim 3 , wherein the first mirror, the second mirror and the ring comprise the same material.
5. The optical arrangement of claim 3 , wherein the ring comprises a glass ceramic material.
6. The optical arrangement of claim 3 , wherein the ring has an opening.
7. The optical arrangement of claim 1 , wherein the light has a wavelength of less than 15nm.
8. An objective comprising an optical arrangement of claim 1 , wherein the objective is a microlithographic EUV projection objective.
9. The projection objective of claim 8 , wherein:
the projection objective is configured to image an object plane into an image plane; and
one of the following holds:
the second mirror is geometrically disposed in the last position at an image plane side of the projection objective; or
the second mirror is geometrically disposed at a smallest spacing relative to the image plane.
10. The projection objective of claim 8 , wherein the projection objective has a numerical aperture of at least 0.3.
11. An apparatus, comprising:
an illumination system; and
a projection objective comprising the optical arrangement of claim 1 ,
wherein the apparatus is a microlithographic EUV projection exposure apparatus.
12. An optical arrangement, comprising:
a first mirror; and
a second mirror rigidly connected to the first mirror,
wherein:
during use, light travels through the optical arrangement along a path;
the first and second mirrors are in direct succession to each other along the path;
the optical arrangement has a lowest natural frequency which is 20% greater than a lowest natural frequency of a corresponding optical arrangement without a rigid connection between the first and second mirrors; and
the optical arrangement is configured to be used in a microlithographic EUV projection objective.
13. An optical arrangement, comprising:
a first mirror; and
a second mirror rigidly connected to the first mirror,
wherein:
during use, light travels through the optical arrangement along a path;
the first and second mirrors are in direct succession to each other along the path;
the optical arrangement has a natural frequency of at least 1200 Hz; and
the optical arrangement is configured to be used in a microlithographic EUV projection objective.
14. An optical arrangement, comprising:
a first mirror; and
a second mirror rigidly connected to the first mirror,
wherein:
during use, light travels through the optical arrangement along a path;
the first and second mirrors are in direct succession to each other along the path;
the optical arrangement has an area moment of inertia which is 40 % greater than an area moment of inertia of a corresponding optical arrangement without a rigid connection between the first and second mirrors; and
the optical arrangement is configured to be used in a microlithographic EUV projection objective.
15. An optical arrangement, comprising:
a first mirror; and
a second mirror, the second mirror having a ratio of maximum diameter to maximum thickness of at least 10,
wherein a natural frequency of the optical arrangement is at least 1200Hz, and the optical arrangement is configured to be used in a microlithographic EUV projection objective.
16. An optical arrangement, comprising:
a first mirror; and
a second mirror rigidly connected to the first mirror,
wherein:
during use, light travels through the optical arrangement along a path;
the first and second mirrors are in direct succession to each other along the path;
the first mirror has a through hole along the path;
the second mirror has a through hole along the path;
the optical arrangement has a natural frequency of at least 1200Hz; and
the optical arrangement is configured to be used in a microlithographic EUV projection objective.
17. An optical arrangement, comprising:
a first mirror; and
a second mirror rigidly connected to the first mirror,
wherein:
during use, light travels through the optical arrangement along a path;
the first and second mirrors are in direct succession to each other along the path;
the first mirror has a through hole along the path;
the second mirror has a through hole along the path;
the optical arrangement has an area moment of inertia which is 40 % greater than an area moment of inertia of a corresponding optical arrangement without a rigid connection between the first and second mirrors; and
the optical arrangement is configured to be used in a microlithographic EUV projection objective.