IP Library Granted Patent US 8,781,308
Granted Patent B2
US 8,781,308 · App. 13/239,517 · Granted Jul 15, 2014

Apparatus for and method of heat-treating film formed on surface of substrate

Inventor: Masahiko Harumoto (Kyoto, JP)
Assignee: Sokudo Co., Ltd.
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Quick Facts
Patent No.
US 8,781,308
App. No.
13/239,517
Granted
Jul 15, 2014
Kind
B2
Abstract

The back surface of a substrate having a front surface coated with a resist film is irradiated with flashes of light emitted from flash lamps. Heat conduction from the back surface of the substrate abruptly raised in temperature by the irradiation with flashes of light toward the front surface thereof occurs to heat the resist film formed on the front surface of the substrate, so that a post-applied bake process is performed. After the completion of the post-applied bake process, a cooling plate cools down the substrate. Regardless of the type of resist film formed on the front surface of the substrate, the substrate has a constant absorptance of flashes of light to allow the resist film to be heated to a constant treatment temperature, because the back surface of the substrate is irradiated with flashes of light.

Claims (26)

1. A heat treatment apparatus comprising

a chamber for receiving therein a substrate, said substrate having a front surface coated with a predetermined film and a back surface;

a holding part for holding said substrate in said chamber;

a flash lamp for irradiating the back surface of said substrate held by said holding part with a flash of light; and

a cooling plate disposed in proximity to the front surface of said substrate held by said holding part and configured to cool down said substrate.

2. The heat treatment apparatus according to claim 1 , wherein

a spacing between the front surface of said substrate held by the holding part and said cooling plate is not greater than 100 μm.

3. A heat treatment apparatus comprising

a chamber for receiving therein a substrate, said substrate having a front surface coated with a predetermined film and a back surface;

a holding part for holding said substrate in said chamber;

a flash lamp for irradiating the back surface of said substrate held by said holding part with a flash of light; and

a black plate provided between said substrate held by said holding part and said flash lamp.

4. A method of heat-treating a substrate having a film-coated surface, comprising the steps of:

(a) putting a substrate into a chamber to hold said substrate, said substrate having a front surface coated with a predetermined film and a back surface;

(b) irradiating the back surface of said substrate held in said chamber with a flash of light emitted from a flash lamp to heat said predetermined film; and

(c) irradiating the back surface of said substrate with a flash of light while said substrate is cooled by a cooling plate disposed in proximity to the front surface of said substrate.

5. The method according to claim 4 , wherein

a time period for heating treatment by the irradiation with a flash of light in said step (b) is not greater than one second.

6. The method according to claim 4 , wherein

a voltage applied to said flash lamp is controlled, whereby a treatment temperature for said predetermined film is changed in said step (b).

7. The method according to claim 4 , wherein

an insulated-gate bipolar transistor controls a current flowing through said flash lamp, whereby a treatment temperature for said predetermined film is changed in said step (b).

8. A method of heat-treating a substrate having a film-coated surface, comprising the steps of:

(a) putting a substrate into a chamber to hold said substrate, said substrate having a front surface coated with a predetermined film and a back surface;

(b) irradiating the back surface of said substrate held in said chamber with a flash of light emitted from a flash lamp to heat said predetermined film; and

(c) a flash of light is directed onto a black plate provided between said substrate and said flash lamp to raise the temperature of said black plate, whereby said substrate is heated by thermal radiation from said black plate raised in temperature.

Assignments (2)
CHANGE OF NAME Recorded Nov 5, 2014
From: SOKUDO CO., LTD.
To: SCREEN SEMICONDUCTOR SOLUTIONS CO., LTD.
Reel/Frame 034150/0849 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 22, 2011
From: HARUMOTO, MASAHIKO
To: SOKUDO CO., LTD.
Reel/Frame 026946/0403 →
Priority Claims (1)
JP 2011-034146 · Feb 21, 2011 · national
Continuity (1)
Related Publication 20120213501A1 · Aug 23, 2012