Photosensor having upper and lower electrodes with amorphous silicon film and n-type amorphous silicon film therebetween and photosensor array
A photosensor array includes plural photosensor pixels. Each of the photosensor pixels includes a lower electrode, an amorphous silicon film, an n-type amorphous silicon film, and an upper electrode. The photosensor array includes plural scanning lines connected to the upper electrodes, plural read lines connected to the lower electrodes, a scanning circuit that is connected to the plural scanning lines, and sequentially supplies a selection scanning signal of a first voltage to the respective scanning lines, a first unit that inputs a second voltage higher than the first voltage to the plural read lines in a blanking period of one horizontal scanning period, and thereafter puts the plural read lines into the floating state, and a second unit that outputs a voltage change in each of the read lines within one horizontal scanning period as the sensor output voltage of the photosensor pixel.
1. A photosensor including a lower electrode formed of a metal film, an amorphous silicon film disposed on the lower electrode, an n-type amorphous silicon film disposed on the amorphous silicon film, and an upper electrode disposed on the n-type amorphous silicon film, in which the photosensor outputs a voltage depending on the amount of light input to the amorphous silicon film as a sensor output voltage, the photosensor comprising:
a unit that inputs a first voltage to the upper electrode;
a unit that inputs a second voltage higher in potential than the first voltage to the lower electrode in an on-state, and puts the lower electrode into a floating state in an off-state; and
a unit that outputs a voltage change of the lower electrode after a given period has been elapsed, as the sensor output voltage, when the lower electrode is in the floating state;
wherein the lower electrode is directly coupled to a read line connected to an output pad.
2. The photosensor according to claim 1 , wherein a thickness of the amorphous silicon film of each of the photosensor pixels is 500 nm or higher.
3. The photosensor according to claim 2 , wherein a thickness of the amorphous silicon film of each of the photosensor pixels is 1200 nm or lower.
4. A photosensor array including an array of (m×n) photosensor pixels, each including a lower electrode formed of a metal film, an amorphous silicon film disposed on the lower electrode, an n-type amorphous silicon film disposed on the amorphous silicon film, and an upper electrode disposed on the n-type amorphous silicon film, in which each of the photosensor pixels outputs a voltage corresponding to the amount of light input to the amorphous silicon film,
the photosensor array comprising:
a plurality of scanning lines directly connected to the upper electrodes included in the photosensor pixels on each row;
a plurality of read lines directly connected to the lower electrodes included in the photosensor pixels on each column and extending in a direction where the photosensor pixels on each column are aligned;
a scanning circuit that is connected to the plurality of scanning lines, and sequentially supplies a selection scanning signal of a first voltage to the respective scanning lines every one horizontal scanning period;
a first unit that inputs a second voltage higher in potential than the first voltage to the plurality of read lines in a blanking period of one horizontal scanning period, and thereafter puts the plurality of read lines into the floating state; and
a second unit that is connected to the plurality of read lines, and outputs a voltage change in each of the read lines within one horizontal scanning period as the sensor output voltage of the photosensor pixel having the lower electrode connected to each of the read lines and the upper electrode receiving the selection scanning voltage.
5. A photosensor array including an array of (m×n) photosensor pixels, each including a lower electrode formed of a metal film, an amorphous silicon film disposed on the lower electrode, an n-type amorphous silicon film disposed on the amorphous silicon film, and an upper electrode disposed on the n-type amorphous silicon film, and (m×1) compensation photosensor pixels, each including a lower electrode formed of a metal film; an amorphous silicon film disposed on the lower electrode, the amorphous silicon film blocked from light, an n-type amorphous silicon film disposed on the amorphous silicon film, and an upper electrode disposed on the n-type amorphous silicon film, in which each of the photosensor pixels outputs a voltage corresponding to the amount of light input to the amorphous silicon film,
the photosensor array comprising:
a plurality of scanning lines directly connected to the upper electrodes included in the photosensor pixels and the compensation photosensor pixel on each row;
a plurality of read lines directly connected to the lower electrodes of the photosensor pixels on each column and extending in a direction where the photosensor pixels on each column are aligned;
a compensation pixel read line connected to the lower electrodes of the (m×1) compensation photosensor pixels;
a scanning circuit that is connected to the plurality of scanning lines, and sequentially supplies a selection scanning signal of a first voltage to the respective scanning lines every one horizontal scanning period;
a first unit that inputs a second voltage higher in potential than the first voltage to the plurality of read lines and the compensation pixel read line in a blanking period of one horizontal scanning period, and thereafter puts the plurality of read lines and the compensation pixel read line into the floating state;
a second unit that is connected to the plurality of read lines, and outputs a voltage change in each of the read lines within one horizontal scanning period as the sensor output voltage of the photosensor pixel having the lower electrode connected to each of the read lines and the upper electrode receiving the selection scanning voltage; and
a third unit that is connected to the compensation pixel read line, and outputs a voltage change in the compensation pixel read line within the horizontal scanning period as a compensation signal voltage of the compensation photosensor pixel having the upper electrode receiving the selection scanning voltage.
6. The photosensor array according to claim 5 , further comprising: a signal processing circuit that receives the respective sensor output voltages and the compensation signal voltages,
wherein the signal processing circuit includes:
an A/D converter that subjects the respective sensor output voltages and the compensation signal voltages to A/D conversion; and
a subtractor that subtracts a digital value of the compensation signal voltage converted by the A/D converter from a digital value of the respective sensor output voltages converted by the A/D converter.
7. The photosensor array according to claim 5 ,
wherein the first unit includes a plurality of switching transistors disposed for each of the plurality of read lines and the compensation pixel read line, and
the plurality of switching transistors are on within a blanking period of the one horizontal scanning period, and input the second voltage to the plurality of read lines and the compensation pixel read line.
8. The photosensor array according to claim 5 , wherein a thickness of the amorphous silicon film of each of the photosensor pixels is 500 nm or higher.
9. The photosensor array according to claim 8 , wherein a thickness of the amorphous silicon film of each of the photosensor pixels is 1200 nm or lower.
10. The photosensor according to claim 1 , wherein the lower electrode is directly coupled to the read line without a switching element.
11. The photosensor according to claim 4 , wherein the plurality of read lines are directly connected to the lower electrodes without switching elements.
12. The photosensor according to claim 5 , wherein the plurality of read lines are directly connected to the lower electrodes without switching elements.