Graphene/(multilayer) boron nitride heteroepitaxy for electronic device applications
Disclosed is a substrate-mediated assembly for graphene structures. According to an embodiment, long-range ordered, multilayer BN(111) films can be formed by atomic layer deposition (ALD) onto a substrate. The subject BN(111) films can then be used to order carbon atoms into a graphene sheet during a carbon deposition process.
1. An electronic device, comprising:
a substrate;
a multilayer boron nitride (BN) film with long range order and having a thickness greater than one atomic layer on the substrate; and
a graphene film on the multilayer BN film, providing a graphene/(multilayer)BN structure on the substrate the thickness of the multilayer BN film providing tuned electronic characteristics according to a number of layers of the multilayer BN film.
2. The electronic device according to claim 1 , wherein the multilayer BN film has a thickness of greater than two atomic layers on the substrate.
3. The electronic device according to claim 1 , wherein the substrate comprises metal.
4. The electronic device according to claim 1 , wherein the substrate is a (111) surface of a transition metal.
5. The electronic device according to claim 1 , wherein the substrate is a bulk single crystal substrate or an ordered thin film on a secondary substrate, the bulk single crystal substrate or ordered thin film having in-plane lattice constant between about 3.0 Å and 2.2 Å.
6. The electronic device according to claim 1 , wherein the substrate is a metal interconnection or packaging level metal line on a CMOS substrate.
7. The electronic device according to claim 6 , wherein the metal interconnection or packaging level metal line comprises (111) grains of Ru, Pt, Ni, Nb, or Cu.
8. The electronic device according to claim 1 , wherein the substrate comprises Ru(0001), Pd(111), Ni(111), Cu(111), Nb(111) or Pt(111).
9. The electronic device according to claim 1 , wherein the substrate is an epitaxial film grown on Al 2 O 3 (0001) or ordered Al 2 O 3 (111) films grown on NiAl or Ni 3 Al single crystal substrates.
10. The electronic device according to claim 1 , wherein the multilayer BN film and graphene film are patterned as part of an electronic device.
11. The electronic device according to claim 1 , wherein the multilayer BN film and graphene film are patterned as part of a spintronic device.
12. The electronic device according to claim 1 , wherein the multilayer BN film and graphene film are patterned as part of an optoelectronic device.
13. An electronic device, comprising:
a boron nitride (BN) film on a substrate, wherein the BN film comprises multiple one-atomic-layer thick layers, the multiple layers being ordered; and
carbon on the BN film ordered into a graphene sheet or sheets according to the BN film.
14. The electronic device according to claim 13 , wherein the substrate is a (111) surface of a transition metal.
15. The electronic device according to claim 13 , wherein the substrate is a bulk single crystal substrate or an ordered thin film on a secondary substrate, the bulk single crystal substrate or ordered thin film having in-plane lattice constant between about 3.0 Å and 2.2 Å.
16. The electronic device according to claim 13 , wherein the substrate is a metal interconnection or packaging level metal line on a CMOS substrate.
17. The electronic device according to claim 16 , wherein the metal interconnection or packaging level metal line comprises (111) grains of Ru, Pt, Ni, Nb, or Cu.
18. The electronic device according to claim 13 , wherein the substrate comprises Ru(0001), Pd(111), Ni(111), Cu(111), Nb(111) or Pt(111).
19. The electronic device according to claim 13 , wherein the substrate is an epitaxial film grown on Al 2 O 3 (0001) or ordered Al 2 O 3 (111) films grown on NiAl or Ni 3 Al single crystal substrates.
20. A graphene/(multilayer)BN structure on a substrate, the graphene/(multilayer)BN structure comprising:
an ordered multilayer BN film on the substrate, the ordered multilayer BN film comprising at least two atomic layers of boron nitride; and
graphene formed on the ordered multilayer BN film, wherein the bandgap of the ordered multilayer BN film of the graphene/(multilayer)BN structure is selectively tuned between ˜2 eV to 6 eV.