Semiconductor device and manufacturing method thereof
The reliability of wirings, each of which includes a main conductive film containing copper as a primary component, is improved. On an insulating film including the upper surface of a wiring serving as a lower layer wiring, an insulating film formed of a silicon carbonitride film having excellent barrier properties to copper is formed; on the insulating film, an insulating film formed of a silicon carbide film having excellent adhesiveness to a low dielectric constant material film is formed; on the insulating film, an insulating film formed of a low dielectric constant material as an interlayer insulating film is formed; and thereafter a wiring as an upper layer wiring is formed.
1. A method of manufacturing a semiconductor integrated circuit device, comprising the steps of:
(a) forming a first insulating film over a semiconductor substrate;
(b) forming a first wiring trench in the first insulating film;
(c) filling first wiring trench with a first metal film;
(d) forming a second insulating film over the first metal film and over the first insulating film;
(e) forming a third insulating film over the second insulating film;
(f) forming a fourth insulating film over the third insulating film;
(g) forming a contact hole in the fourth, third and second insulating films;
(h) forming a second wiring trench in the fourth insulating film; and
(i) filling the second wiring trench and the contact hole as one combined unit with a second metal film, such that the second metal wiring is connected to the first metal film,
wherein the first and second metal films include copper as a primary component,
wherein the fourth insulating film has a greater thickness than the combined thicknesses of the second and third insulating films, has a dielectric constant lower than a dielectric constant of a silicon oxide film and is comprised of a material including silicon, oxygen and carbon,
wherein the second insulating film is comprised of a material including silicon, carbon and nitrogen,
wherein the third insulating film is comprised of a material including silicon and carbon,
wherein the material of the second insulating film is different from the material of the third insulating film,
wherein a barrier property to copper of the second insulating film is greater than a barrier property to copper of the third insulating film, and
wherein a thickness of the second insulating film is larger than a thickness of the third insulating film.
2. A method of manufacturing a semiconductor integrated circuit device according to claim 1 ,
wherein the fourth insulating film is comprised of a porous insulating film.
3. A method of manufacturing a semiconductor integrated circuit device according to claim 1 ,
wherein a third metal film is formed between the first metal film and the second metal film, and
wherein the third metal film is comprised of a material including cobalt or tungsten.
4. A method of manufacturing a semiconductor integrated circuit device according to the claim 1 ,
wherein the second insulating film is formed of SiCN film.
5. A method of manufacturing a semiconductor integrated circuit device, comprising the steps of:
(a) forming a first insulating film over a semiconductor substrate;
(b) forming a first wiring trench in the first insulating film;
(c) filling the first wiring trench with a first metal film;
(d) forming a second insulating film over the first metal film and over the first insulating film;
(e) forming a third insulating film over the second insulating film;
(f) forming a fourth insulating film formed over the third insulating film;
(g) forming a contact hole in the fourth, third and second insulating films;
(h) forming a second wiring trench in the fourth insulating film; and
(i) filling the second wiring trench and the contact hole as one combined unit with a second metal film, such that the second metal wiring is connected to the first metal film,
wherein the first and second metal films include copper as a primary component,
wherein the fourth insulating film has a greater thickness than the combined thicknesses of the second and third insulating films, has a dielectric constant lower than a dielectric constant of a silicon oxide film and is comprised of a material including silicon, oxygen and carbon,
wherein the second insulating film is comprised of a material including silicon, carbon, oxygen and nitrogen,
wherein the third insulating film is comprised of a material including silicon and carbon,
wherein the material of the second insulating film is different form the material of the third insulating film,
wherein a barrier property to copper of the second insulating film is greater than a barrier property to copper of the third insulating film, and
wherein a thickness of the second insulating film is larger than a thickness of the third insulating film.
6. A method of manufacturing a semiconductor integrated circuit device according to claim 5 ,
wherein the fourth insulating film is comprised of a porous insulating film.
7. A method of manufacturing a semiconductor integrated circuit device according to the claim 5 ,
wherein a third metal film is formed between the first metal film and the second metal film, and
wherein the third metal film is comprised of a material including cobalt or tungsten.
8. A method of manufacturing a semiconductor integrated circuit device according to claim 5 ,
wherein the second insulating film is formed of SiCON film.
9. A method of manufacturing a semiconductor integrated circuit device, comprising the steps of:
(a) forming a first insulating film over a semiconductor substrate;
(b) forming a first wiring trench in the first insulating film;
(c) filling the first wiring trench with a first metal film;
(d) forming a second insulating film over the first metal film and over the first insulating film;
(e) forming a third insulating film over the second insulating film;
(f) forming a fourth insulating film formed over the third insulating film;
(g) forming a contact hole in the fourth, third and second insulating films;
(h) forming a second wiring trench in the fourth insulating film; and
(i) filling the second wiring trench and the contact hole as one combined unit with a second metal film, such that the second metal wiring is connected to the first metal film,
wherein the first and second metal films include copper as a primary component,
wherein the fourth insulating film has a greater thickness than the combined thicknesses of the second and third insulating films, has a dielectric constant lower than a dielectric constant of a silicon oxide film and is comprised of a material including silicon, oxygen and carbon,
wherein the second insulating film is comprised of a material including silicon, carbon and oxygen,
wherein the third insulating film is comprised of a material including silicon and carbon,
wherein the material of the second insulating film is different form the material of the third insulating film,
wherein a barrier property to copper of the second insulating film is greater than a barrier property to copper of the third insulating film, and
wherein a thickness of the second insulating film is larger than a thickness of the third insulating film.
10. A method of manufacturing a semiconductor integrated circuit device according to claim 9 ,
wherein the fourth insulating film is comprised of a porous insulating film.
11. A method of manufacturing a semiconductor integrated circuit device according to claim 9 ,
wherein a third metal film is formed between the first metal film and the second metal film, and
wherein the third metal film is comprised of a material including cobalt or tungsten.
12. A method of manufacturing a semiconductor integrated circuit device according to claim 9 ,
wherein the second insulating film is formed of SiOC film.