Simulation and correction of mask shadowing effect
View Patent ↗Disclosed are techniques for simulating and correcting the mask shadowing effect using the domain decomposition method (DDM). According to various implementations of the invention, DDM signals for an extreme ultraviolet (EUV) lithography mask are determined for a plurality of azimuthal angles of illumination. Base on the DDM signals, one or more layout designs for making the mask may be analyzed and/or modified.
1. A method of shadowing effect modeling, comprising:
by a computing device:
receiving layout data for one or more layout designs;
receiving information of a plurality of azimuthal angles of illumination;
determining domain decomposition method (DDM) signals for an extreme ultraviolet (EUV) lithography mask to be made based on the one or more layout designs, the DDM signals being grouped into DDM signal sets, each of the DDM signal sets corresponding to a particular azimuthal angle of illumination in the plurality of azimuthal angles of illumination, wherein the determining DDM signals comprises:
dividing the plurality of azimuthal angles of illumination into a first set of azimuthal angles of illumination and a second set of azimuthal angles of illumination;
determining simulated DDM signals for the first set of azimuthal angles of illumination; and
determining interpolated DDM signals for the second set of azimuthal angles of illumination based on the simulated DDM signals;
processing the one or more layout designs based on the DDM signals; and
storing results of the processing the one or more layout designs in a tangible non-transitory medium.
2. The method recited in claim 1 , wherein the processing the one or more layout designs comprises performing simulation to generate aerial images or printed images of layout features in the one or more layout designs.
3. The method recited in claim 2 , wherein the simulation comprises applying a sum-of-coherent-systems (SOCS) method.
4. The method recited in claim 1 , wherein the processing the one or more layout designs comprises performing an optical proximity correction (OPC) process on the one or more layout designs.
5. The method recited in claim 1 , wherein the DDM signals are edge-based DDM signals.
6. The method recited in claim 1 , further comprising:
after determining the DDM signals, storing the determined DDM signals in lookup tables for processing layout data.
7. A method of shadowing effect modeling, comprising:
by a computing device:
receiving layout data for a layout design;
receiving information of a plurality of azimuthal angles of illumination, the plurality of azimuthal angles of illumination consisting of a first set of azimuthal angles of illumination and a second set of azimuthal angles of illumination;
determining domain decomposition method (DDM) signals for an extreme ultraviolet (EUV) lithography mask to be made based on the layout design, the DDM signals being grouped into DDM signal sets, each of the DDM signal sets corresponding to a particular azimuthal angle of illumination in the first set of azimuthal angles of illumination;
processing the layout design to obtain a first set of processing results for the first set of azimuthal angles of illumination based on the DDM signals;
determining a second set of processing results for the second set of azimuthal angles of illumination based on interpolating the first set of processing results; and
storing the first set of processing results and the second set of processing results in a tangible non-transitory medium.
8. The method recited in claim 7 , wherein the first set of processing results and the second set of processing results comprising information of aerial image intensities, edge placement errors, or mask displacement.
9. The method recited in claim 7 , wherein the DDM signals are edge-based DDM signals.
10. A non-transitory processor-readable medium storing processor-executable instructions for causing one or more processors to perform a method of shadowing effect modeling, the method comprising:
receiving layout data for one or more layout designs;
receiving information of a plurality of azimuthal angles of illumination;
determining domain decomposition method (DDM) signals for an extreme ultraviolet (EUV) lithography mask to be made based on the one or more layout designs, the DDM signals being grouped into DDM signal sets, each of the DDM signal sets corresponding to a particular azimuthal angle of illumination in the plurality of azimuthal angles of illumination, wherein the determining DDM signals comprises:
dividing the plurality of azimuthal angles of illumination into a first set of azimuthal angles of illumination and a second set of azimuthal angles of illumination;
determining simulated DDM signals for the first set of azimuthal angles of illumination; and
determining interpolated DDM signals for the second set of azimuthal angles of illumination based on the simulated DDM signals;
processing the one or more layout designs based on the DDM signals; and
storing results of the processing the one or more layout designs in a tangible non-transitory medium.
11. The non-transitory processor-readable medium recited in claim 10 , wherein the processing the one or more layout designs comprises performing simulation to generate aerial images or printed images of layout features in the one or more layout designs.
12. The non-transitory processor-readable medium recited in claim 10 , wherein the processing the one or more layout designs comprises performing an optical proximity correction (OPC) process on the one or more layout designs.
13. The non-transitory processor-readable medium recited in claim 10 , wherein the DDM signals are edge-based DDM signals.
14. The non-transitory processor-readable medium recited in claim 11 , wherein the simulation comprises applying a sum-of-coherent-systems (SOCS).
15. A system comprising:
one or more processors, the one or more processors programmed to perform a method of shadowing effect modeling, the method comprising:
receiving layout data for one or more layout designs;
receiving information of a plurality of azimuthal angles of illumination;
determining domain decomposition method (DDM) signals for an extreme ultraviolet (EUV) lithography mask to be made based on the one or more layout designs, the DDM signals being grouped into DDM signal sets, each of the DDM signal sets corresponding to a particular azimuthal angle of illumination in the plurality of azimuthal angles of illumination, wherein the determining DDM signals comprises:
dividing the plurality of azimuthal angles of illumination into a first set of azimuthal angles of illumination and a second set of azimuthal angles of illumination;
determining simulated DDM signals for the first set of azimuthal angles of illumination; and
determining interpolated DDM signals for the second set of azimuthal angles of illumination based on the simulated DDM signals;
processing the one or more layout designs based on the DDM signals; and
storing results of the processing the one or more layout designs in a tangible non-transitory medium.
16. The system recited in claim 15 , wherein the processing the one or more layout designs comprises performing simulation to generate aerial images or printed images of layout features in the one or more layout designs.
17. The system recited in claim 15 , wherein the processing the one or more layout designs comprises performing an optical proximity correction (OPC) process on the one or more layout designs.
18. The system recited in claim 15 , wherein the DDM signals are edge-based DDM signals.
19. The system recited in claim 16 , wherein the simulation comprises applying a sum-of-coherent-systems (SOCS).
20. The system recited in claim 16 , further comprising: after determining the DDM, signals, storing the determined DDM signals in lookup tables for processing layout data.