Piezo-phototronic effect devices

1. A semiconducting device, comprising:

(a) a piezoelectric structure, having a first end and an opposite second end;

(b) a first conductor in electrical communication with the first end;

(c) a second conductor in electrical communication with the second end so as to form an interface therebetween;

(d) a force applying structure configured to maintain an amount of strain in the piezoelectric member; and

(e) a voltage source configured to apply a potential between the first conductor and the second conductor, wherein the piezoelectric structure emits light as a function of the amount of strain applied by the force applying structure and the potential applied between the first conductor and the second conductor.

2. The semiconducting device of claim 1 , wherein the second conductor includes a material that forms with the piezoelectric member at the interface a selected one of a p-n junction or a Schottky contact.

3. The semiconducting device of claim 2 , wherein a desired electrical characteristic exhibited at the interface comprises a predetermined band relationship at the interface.

4. The semiconducting device of claim 1 , further comprising a non-conductive flexible substrate upon which the piezoelectric structure is disposed.

5. The semiconducting device of claim 1 , wherein the piezoelectric structure comprises a selected one of a nanowire or a one-dimensional shape structure.

6. The semiconducting device of claim 1 , wherein the piezoelectric structure comprises a selected one of ZnO, GaN, or a wurtzite structured material.

7. The semiconducting device of claim 1 , wherein the first conductor comprises a material selected to form an Ohmic contact with the piezoelectric structure.

8. A semiconducting device configured as a light emitting device, comprising:

(a) a piezoelectric structure including a wurtzite nanowire, having a first end and an opposite second end;

(b) a first conductor in electrical communication with the first end;

(c) a second conductor in electrical communication with the second end so as to form an interface therebetween; and

(d) a force applying structure configured to maintain an amount of strain in the piezoelectric member sufficient to generate a desired electrical characteristic in the semiconducting device;

(e) a Mg-doped GaN film deposited on a first Al 2 O 3 substrate, the first conductor in electrical communication therewith;

(f) an ITO film deposited on a second Al 2 O 3 substrate, the second conductor in electrical communication therewith, the second Al 2 O 3 substrate spaced apart from the first Al 2 O 3 substrate so as to define a gap having a predetermined width therebetween, the wurtzite nanowire being placed across the gap; and

(g) a voltage source electrically coupled to both the Mg-doped GaN film and the ITO film so as to be configured to generate a potential difference therebetween;

(h) a polyimide film disposed on the force applying structure and on which is disposed both the first Al 2 O 3 substrate and the second Al 2 O 3 substrate; and

(i) a transparent resilient layer disposed against wurtzite nanowire, the Mg-doped GaN film and the ITO film.

9. The semiconducting device of claim 8 , wherein the force applying structure comprises an alumina rod configured to apply a force in a direction that is normal to an axis of the wurtzite nanowire.

10. A photodetector for detecting light from a light source, comprising:

(a) a piezoelectric structure, having a first end and an opposite second end;

(b) a first conductor in electrical communication with the first end and including a first metal that forms a Schottky contact therewith;

(c) a second conductor in electrical communication with the second end and including a second metal that forms a Schottky contact therewith;

(d) a strain-inducing structure configured to maintain an amount of strain in the piezoelectric member; and

(e) a voltage source configured to apply a bias potential between the first conductor and the second conductor, the bias potential of a value so that current flows through the piezoelectric structure as a function of an intensity of light from the light source and the amount of strain maintained in the piezoelectric member.

11. The photodetector of claim 10 , further comprising a non-conductive flexible substrate upon which the piezoelectric structure is disposed.

12. The photodetector of claim 11 , wherein the flexible substrate comprises polystyrene.

13. The photodetector of claim 10 , wherein the piezoelectric structure comprises a nanowire.

14. The photodetector of claim 10 , wherein the piezoelectric structure comprises material selected from a group of materials consisting of: ZnO, GaN, and a wurtzite structured material.