Semiconductor optical modulator, semiconductor optical integrated device, and method of manufacturing the same
The invention provides a semiconductor optical modulator including a two-step mesa optical waveguide having a first clad layer ( 101 ); a mesa-like core layer ( 102 ) formed over the first clad layer ( 101 ); and a second clad layer ( 103 ) formed into a mesa shape over the core layer ( 102 ), and having a mesa width smaller than that of the core layer ( 102 ). The two-step mesa optical waveguide includes a multi-mode optical waveguide region to which an electric field is applied or into which an electric current is injected, and a single-mode optical waveguide region to which the electric field is not applied and into which the electric current is not injected. When the mesa width of the core layer in the multi-mode optical waveguide region is defined as W mesa1 , and the mesa width of the core layer in the single-mode optical waveguide region is defined as W mesa2 , W mesa1 >W mesa2 is satisfied.
1. A semiconductor optical modulator comprising:
a two-step mesa optical modulator having a first clad layer;
a mesa-like core layer formed over the first clad layer; and
a second clad layer that is formed over the core layer so as to have a mesa-like shape, and that has a mesa width smaller than a mesa width of the core layer,
wherein the two-step mesa optical modulator further has:
a multi-mode optical waveguide region to which an electric field is applied or into which an electric current is injected; and
a single-mode optical waveguide region to which an electric field is not applied and into which an electric current is not injected,
wherein W mesa1 >W mesa2 is satisfied, when the mesa width of the core layer in the multi-mode optical waveguide region is defined as W mesa1 and the mesa width of the core layer in the single-mode optical waveguide region is defined as W mesa2 ,
wherein the mesa width W rib1 of the second clad layer in the multi-mode optical waveguide region and the mesa width W rib2 of the second clad layer in the single-mode optical waveguide region are substantially equal to each other.
2. The semiconductor optical modulator according to claim 1 , satisfying equations (1) to (3), when the mesa width of the core layer in the multi-mode optical waveguide region is defined as W mesa1 , the mesa width of the second clad layer in the multi-mode optical waveguide region is defined as W rib1 , the mesa width of the core layer in the single-mode optical waveguide region is defined as W mesa2 , and the mesa width of the second clad layer in the single-mode optical waveguide region is defined as W rib2 :
d 1 =( W mesa1 −W rib1 ) (1)
d 2 =( W mesa2 −W rib2 ) (2)
1.0 μm≦d 1 −d 2 . (3)
3. The semiconductor optical modulator according to claim 1 ,
wherein light that is propagated through the two-step mesa optical waveguide in the multi-mode optical waveguide region is incident on the two-step mesa optical waveguide in the single-mode optical waveguide region.
4. The semiconductor optical modulator according to claim 1 ,
wherein the two-step mesa optical waveguide includes a connection region that connects the core layer in the multi-mode optical waveguide region and the core layer in the single-mode optical waveguide region, wherein the core layer in the connection region has a taper structure.
5. The semiconductor optical modulator according to claim 1 ,
wherein the two-step mesa optical waveguide having a curved shape is provided in the single-mode optical waveguide region.
6. A semiconductor optical integrated device comprising an optical modulator according to claim 1 .
7. A method of manufacturing a semiconductor optical modulator, comprising forming a two-step mesa optical modulator having a first clad layer;
a mesa-like core layer formed over the first clad layer; and
a second clad layer that is formed over the core layer so as to have a mesa-like shape, and that has a mesa width smaller than a mesa width of the core layer,
wherein the two-step mesa optical modulator further has:
a multi-mode optical waveguide region to which an electric field is applied or into which an electric current is injected; and
a single-mode optical waveguide region to which an electric field is not applied and into which an electric current is not injected,
wherein W mesa1 >W mesa2 is satisfied, when the mesa width of the core layer in the multi-mode optical waveguide region is defined as W mesa1 , and the mesa width of the core layer in the single-mode optical waveguide region is defined as W mesa2 ,
wherein the mesa width W rib1 of the second clad layer in the multi-mode optical waveguide region and the mesa width W rib2 of the second clad layer in the single-mode optical waveguide region are substantially equal to each other.
8. A method of manufacturing a semiconductor optical integrated device using a method of manufacturing an optical modulator according to claim 7 .