Back-illuminated solid-state image pickup device
In a back-illuminated solid-state image pickup device including a semiconductor substrate 4 having a light incident surface at a back surface side and a charge transfer electrode 2 disposed at a light detection surface at an opposite side of the semiconductor substrate 4 with respect to the light incident surface, the light detection surface has an uneven surface. By the light detection surface having the uneven surface, etaloning is suppressed because lights reflected by the uneven surface have scattered phase differences with respect to a phase of incident light and resulting interfering lights offset each other. A high quality image can thus be acquired by the back-illuminated solid-state image pickup device.
1. A back-illuminated solid-state image pickup device comprising:
a first conductivity type semiconductor substrate having a light incident surface at a back surface side;
a second conductivity type semiconductor layer provided on an opposite side of the light incident surface of first conductive type semiconductor substrate;
an insulating layer provided on the second conductive type semiconductor layer, a first interface being formed between the second conductivity type semiconductor layer and the insulating layer and
a charge transfer electrode disposed on an opposite side of the first interface of the insulating layer, wherein
the solid-state image pickup device is a charge coupled device,
the first conductivity type semiconductor substrate and the second conductivity type semiconductor layer are comprised of silicon, and
the first interface has an uneven surface comprised of a plurality of concaves distributed over the first interface,
wherein
the concaves continue smoothly, and
the charge transfer electrode covers the plurality of concaves.
2. The back-illuminated solid-state image pickup device according to claim 1 ,
wherein
the light incident surface of the first conductivity type semiconductor substrate is flat, and
the opposite side of first conductive type semiconductor substrate has an uneven surface.
3. The back-illuminated solid-state image pickup device according to claim 1 ,
wherein, within the uneven surface, respective unevenness pattern within respective pixels of the back-illuminated solid-state image pickup device are the same.
4. The back-illuminated solid-state image pickup device according to claim 1 ,
wherein a main semiconductor substrate comprises:
the first conductivity type semiconductor substrate; and
the second conductivity type semiconductor layer, and
wherein, when D1 is a distance along a thickness direction of the main semiconductor substrate between a deepest portion of a depressed portion and an apex or top surface of a projected portion of the uneven surface, the distance D1 is 0.06 to 1 μm.
5. The back-illuminated solid-state image pickup device according to claim 1 ,
wherein
a second interface is formed between the insulating layer and the charge transfer electrode, and
the second interface has an uneven surface.