Metal-Ceramic Substrate
A metal/ceramic substrate made up of a multilayer, plate-shaped ceramic material and at least one metallization provided on a surface side of the ceramic material. The at least one metallization is bonded to the ceramic material by direct copper bonding or reactive brazing and the ceramic material is made of a base layer made of silicon nitride ceramic. The at least one metallization is formed from at least one intermediate layer of an oxidic ceramic applied to the at least one base layer.
1 . A metal/ceramic substrate comprising a multilayer, plate-shaped ceramic material and at least one metallization provided on a surface side of the ceramic material, the at least one metallization is bonded to the ceramic material by direct bonding method or reactive brazing, wherein the ceramic material comprises at least one base layer made of a silicon nitride ceramic and wherein the surface side of the ceramic material provided with the at least one metallization is formed from at least one intermediate layer of an oxidic ceramic applied to the at least one base layer, the at least one intermediate layer is a zirconium oxide layer or a silicate layer.
2 . The substrate according to claim 1 , wherein silicate in the silicate layer is a zirconium silicate, a titanium silicate or a hafnium silicate.
3 . The substrate according to claim 1 , wherein the at least one intermediate layer has a thermal coefficient of expansion that is smaller than or, at most, equal to 6×10 −6 K −1 .
4 . The substrate according to claim 1 , wherein a proportion of free silicon oxide (SiO 2 ) in the at least one intermediate layer, near a bond between the at least one intermediate layer and the at least one metallization is negligibly small.
5 . The substrate according to claim 1 , wherein a proportion of free silicon oxide in the at least one intermediate layer in the area of the bond between the at least one intermediate layer and the at least one metallization is equal to or close to zero.
6 . The substrate according to claim 1 , wherein the at least one base layer made of silicon nitride ceramic is provided with at least one intermediate layer on each surface sides of the at least one base layer.
7 . The substrate according to claim 6 , wherein the at least one metallization is applied to the at least one intermediate layer.
8 . The substrate according to claim 1 , wherein the ceramic material is formed symmetrically to a central plane running parallel to surface sides of the ceramic material, in relation to a layer sequence and a thickness of the at least one base layer and the at least one intermediate layer.
9 . The substrate according to claim 1 , wherein the substrate is formed symmetrically to a central plane running parallel to surface sides of the substrate, in relation to a layer sequence or in relation to a thickness of the at least one intermediate layers and the at least one metallization.
10 . The substrate according to claim 1 , wherein a material used for the at least one intermediate layer has a modulus of elasticity of under 300 GPa or within the range 100 to 300 GPa.
11 . The substrate according to claim 1 , wherein a thickness of the at least one intermediate layer is less than a thickness of the at least one base layer or is less than a thickness of the at least one metallization.
12 . The substrate according to claim 1 , wherein a thickness of the at least one metallization is at most equal to three times a thickness of the at least one base layer.
13 . The substrate according to claim 1 , wherein a thickness of the at least one intermediate layer falls within the range 0.1-10 μm.
14 . The substrate according to claim 1 , wherein a thickness of the at least one base layer falls within the range 0.1 to 2 mm.
15 . The substrate according to claim 1 , wherein a thickness of the at least one metallization falls within the range 0.5-1 mm.
16 . The substrate according to claim 1 , wherein the at least one metallization is made of a copper alloy.
17 . The substrate according to claim 1 , wherein the at least one base layer or the at least one intermediate layer contains sintering aids in the form of at least one rare earth element.
18 . The substrate according to claim 17 , wherein the at least one intermediate layer contains as a sintering aid an oxide of Ho, Er, Yb, Y, La, Sc, Pr, Ce, Nd, Dy, Sm, Gd or mixtures of at least two of the oxides.
19 . The substrate according to claim 17 , wherein a proportion of sintering aids in the at least one base layer or the at least one intermediate layer is within the range 1.0 to 8.0% by wt.
20 . The substrate according to claim 1 , wherein the at least one intermediate layer contains as an additional component at least one oxidic constituent from Li 2 O, TiO 2 , BaO, ZnO, B 2 O 3 , CsO, Fe 2 O 3 , ZrO 2 , CuO or Cu 2 O, a proportion of this additional component in the at least one intermediate layer is a maximum of 20% by wt.
21 . The substrate according to claim 1 , wherein the at least one base layer made of silicon nitride ceramic exhibits a thermal conductivity greater than 45 W/mK.
22 . The substrate according to claim 1 , wherein an adhesion or peel strength of the at least one metallization on the ceramic material is greater than 40 N/cm.
23 . The substrate according to claim 1 , wherein a further layer of a brazing solder is provided between the at least one intermediate layer and the metallization.
24 . The substrate according to claim 23 , wherein the brazing solder comprises solder component and an active metal selected from the group consisting of Ti, Hf, Zr, Nb and Ce.
25 . The substrate according to claim 1 , wherein outer dimensions of the substrate are greater than 80×80 mm.
26 . A method of producing a metal/ceramic substrate with a multilayer, plate-shaped ceramic material comprising at least one base layer made of a silicon nitride ceramic and at least one metallization provided on a surface side of the ceramic material, wherein an intermediate layer is formed on a surface side of the base layer to be provided with the at least one metallization and the at least one metallization is applied to the intermediate layer by direct bonding or reactive brazing of at least one metal layer, wherein
a zirconium oxide layer or a silicate layer is used for the intermediate layer.
27 . The method according to claim 26 , wherein the intermediate layer has a thermal coefficient of expansion which is smaller than or, at most, equal to 6×10 −6 K −1 and a proportion of free silicon (SiO 2 ) near to a bond between the intermediate layer and the metallization or at a transition between the intermediate layer and the metallization is negligibly small.
28 . The method according to claim 27 , wherein the intermediate layer is formed in such a manner that a proportion of free silicon oxide (SiO 2 ) in the at least one intermediate layer close to a bond between the intermediate layer and the at least one metallization or at the transition between the intermediate layer and the at least one metallization, is equal to or almost equal to zero.
29 . The method according to claim 27 , wherein the at least one base layer is provided with an intermediate layer on each of two surface sides of the at least one base layer and the at least one metallization is applied to each of the intermediate layers.
30 . The method according to claim 26 , wherein the intermediate layer is produced with a thickness that is less than a thickness of the at least one base layer or less than a thickness of the at least one metallization.
31 . The method according to claim 26 , wherein a metal foil with a thickness that is, at most, equal to three times a thickness of the at least one base layer is used for the at least one metallization.
32 . The method according to claim 26 , wherein the intermediate layer is produced with a thickness within the range 0.1-10 μm.
33 . The method according to claim 26 , wherein a material is used for the at least one base layer or for the intermediate layer, which contains at least one sintering aid, in the form of at least one rare earth element, and wherein a proportion of the at least one sintering aid within the range 1.0 to 8.0% by wt.
34 . The method according to claim 26 , wherein a material is used for the intermediate layer, which contains at least one oxidic constituent from the group Li 2 O, TiO 2 , BaO, ZnO, B 2 O 3 , CsO, Fe 2 O 3 , ZrO 2 , CuO or Cu 2 O as an additional component, and wherein a proportion of the additional component is a maximum of 20% by wt. relative to a total mass of the intermediate layer.
35 . The method according to claim 26 , wherein the at least one base layer is coated on at least one surface side with a material forming the intermediate layer and the coating is burnt in or densely sintered at a temperature within the range 1200° C. to 1680° C.
36 . The method according to claim 35 , wherein the burning-in or dense-sintering takes place in an oxidic atmosphere.
37 . The method according to claim 35 , wherein the coating takes place by spraying or dipping.
38 . The method according to claim 35 , wherein the coating involves use of micro- to nano-dispersed mixtures containing a zirconium oxide or at least one silicate.