Aluminum nitride substrate, aluminum nitride circuit board, semiconductor apparatus, and method for manufacturing aluminum nitride substrate
The present invention provides an aluminum nitride substrate and an aluminum nitride circuit board having excellent insulation characteristics and heat dissipation properties and having high strength, a semiconductor apparatus, and a method for manufacturing an aluminum nitride substrate. An aluminum nitride substrate according to the present invention is an aluminum nitride substrate having aluminum nitride as a main component and comprising a polycrystal containing a plurality of aluminum nitride grains, and complex oxide grains being present at grain boundaries of the aluminum nitride grains and including a rare earth element and aluminum, wherein the aluminum nitride grains have a maximum grain size of 10 μm or less, the complex oxide grains have a maximum grain size smaller than the maximum grain size of the aluminum nitride grains, the number of the complex oxide grains having a grain size of 1 μm or more being present in a field of view of 100 μm×100 μm of a surface of the aluminum nitride substrate observed is 40 or more, the aluminum nitride substrate has a bending strength of 400 MPa or more in an unpolished state after firing, and the aluminum nitride substrate has a volume resistivity of 10 12 Ωm or more.
1. An aluminum nitride substrate suitable for a circuit board, comprising:
a polycrystal, wherein the polycrystal further comprises:
a plurality of aluminum nitride grains; and
a plurality of complex oxide grains including a rare earth element and aluminum at grain boundaries of the aluminum nitride grains,
wherein
the plurality of aluminum nitride grains have a maximum aluminum nitride grain size of 10 μm or less,
the plurality of complex oxide grains have a maximum oxide grain size smaller than the maximum aluminum nitride grain size,
a number of complex oxide grains in the plurality of complex oxide grains of grain size of 1 μm or more in an area of 100 μm×100 μm of a surface of the aluminum nitride substrate observed is 40 to 70,
an average grain size of the complex oxide grains is from 2 to 3 μm,
a content of the rare earth element with respect to the aluminum nitride substrate is from 3% by mass to 6% by mass in terms of a rare earth oxide equivalent amount,
the aluminum nitride substrate has a relative density of 99% or more,
the aluminum nitride substrate has a bending strength of 400 MPa to 500 MPa in an unpolished state after firing,
the aluminum nitride substrate has a volume resistivity of 10 12 Ωm to 10 15 Ωm, and
the aluminum nitride substrate has a thermal conductivity of 160 W/m·K to 190 W/m·K;
wherein the aluminum nitride substrate has the bending strength of 450 MPa to 550 MPa when the aluminum nitride substrate is polished to a surface roughness Ra of up to 1 μm after firing.
2. The aluminum nitride substrate suitable for a circuit board according to claim 1 , wherein an average grain size among the plurality of aluminum nitride grains is from 3 μm to 9 μm.
3. An aluminum nitride circuit board comprising:
the aluminum nitride substrate according to claim 1 and
a conductor portion provided on a surface of the aluminum nitride substrate.
4. The aluminum nitride circuit board according to claim 3 , wherein the conductor portion is a metal plate bonded to the aluminum nitride substrate via an active metal brazing material layer.
5. A semiconductor apparatus comprising:
the aluminum nitride circuit board according to claim 3 and
a semiconductor device mounted on the conductor portion of the aluminum nitride circuit board.
6. The aluminum nitride substrate suitable for a circuit board according to claim 1 , wherein the complex oxide grains have a maximum grain size of 7 μm or less.
7. The aluminum nitride substrate suitable for a circuit board according to claim 1 , wherein the aluminum nitride substrate has a volume resistivity of 10 13 Ωm to 10 15 Ωm.