ELONGATE SOLAR CELL AND EDGE CONTACT
An elongate solar cell, comprising a semiconductor body having two mutually opposed faces, at least one of the faces being an active face for receiving incident light, and two mutually opposed edges orthogonal to the faces, the edges comprising electrical contacts thereon for conducting electrical current generated by the solar cell from the light; wherein the electrical contact to at least one of the edges includes an electrically conductive material that contacts only a fractional portion of the at least one edge of the semiconductor body to improve the performance of the solar cell.
1 . An elongate solar cell, comprising a semiconductor body having two mutually opposed faces, at least one of the faces being an active face for receiving incident light, and two mutually opposed edges substantially orthogonal to the faces, the edges comprising electrical contacts thereon for conducting electrical current generated by the solar cell from the light;
wherein the electrical contact to at least one of the edges includes an electrically conductive material that contacts a fractional portion of the at least one edge of the semiconductor body to improve the performance of the solar cell.
2 . The elongate solar cell as claimed in claim 1 , wherein the electrically conductive material contacts a fractional portion of the at least one edge between about 0.01% and about 99% of the surface area of the edge.
3 . The elongate solar cell as claimed in claim 2 , wherein the electrically conductive material contacts a small portion of the at least one edge between about 0.01% and about 50% of the surface area of the edge.
4 . The elongate solar cell as claimed in any one of claims 1 to 3 , wherein the electrically conductive material is of elongate form and substantially centrally disposed along a longitudinal axis of the at least one edge of the semiconductor body.
5 . The elongate solar cell as claimed in any one of claims 1 to 3 , wherein the electrically conductive material contacts the semiconductor body at mutually spaced regions of the edge, the regions of the edge not contacted by the electrically conductive material being contacted by a dielectric material.
6 . The elongate solar cell as claimed in claim 5 , wherein the regions are of elongate form.
7 . The elongate solar cell as claimed in claim 5 , wherein the regions are of elongate form, mutually parallel, and inclined to a longitudinal axis of the at least one edge.
8 . The elongate solar cell of claim 5 , wherein the regions are of non-elongate form and distributed over the at least one edge.
9 . The elongate solar cell as claimed in any one of claims 1 to 8 , wherein the electrically conductive material contacts less than about one half of the surface area of the edge of the semiconductor body.
10 . The elongate solar cell as claimed in claim 9 , wherein the electrically conductive material contacts less than one half of the surface area of the edge of the semiconductor body.
11 . The elongate solar cell as claimed in claim 10 , wherein the electrically conductive material contacts substantially less than one half of the surface area of the edge of the semiconductor body.
12 . The elongate solar cell as claimed in claim 11 , wherein the electrically conductive material contacts substantially less than about 10% of the surface area of the edge of the semiconductor body.
13 . The elongate solar cell as claimed in claim 12 , wherein the electrically conductive material contacts substantially less than about 1% of the surface area of the edge of the semiconductor body.
14 . An elongate solar cell comprising:
a semiconductor body comprising two mutually opposed faces, at least one of the faces being an active face for receiving incident light, and two mutually opposed edges substantially orthogonal to the faces, the edges comprising electrical contacts thereon for conducting electrical current generated by the solar cell from the light;
wherein at least one of the edges of the elongate solar cell comprises a plurality of mutually spaced doped regions so that the at least one edge is doped discontinuously to improve the performance of the solar cell.
15 . The elongate solar cell as claimed in claim 13 wherein at least one active face comprises a doped region of a first polarity (either p-type or n-type) and at least one of the edges is doped to form doped regions of a second polarity opposite to the first polarity (either n-type or p-type respectively), wherein the doped region of the at least one face intersects or abuts at least one of the doped regions of the at least one edge.
16 . The elongate solar cell as claimed in claim 15 wherein the doped regions in the at least one edge occupy a fractional portion of the at least one edge.
17 . The elongate solar cell as claimed in claim 16 wherein the fractional portion comprises between about 0.01% and about 99% of the surface area of the at least one edge.
18 . The elongate solar cell as claimed in claim 17 wherein the fractional portion comprises between about 0.01% and about 50% of the surface area of the at least one edge.
19 . The elongate solar cell as claimed in claim 17 wherein the fractional portion comprises between about 50% and about 99% of the surface area of the at least one edge.
20 . The elongate solar cell as claimed in any one of claims 13 to 19 wherein the doped regions in the at least one edge form respective p-n junctions with the doped region of the corresponding at least one face.
21 . A process for producing an elongate solar cell, the elongate solar cell comprising a semiconductor body having two mutually opposed faces, at least one of the faces being an active face for receiving incident light, and two mutually opposed edges substantially orthogonal to the faces, the edges comprising electrical contacts thereon for conducting electrical current generated by the solar cell from the light;
the process comprising forming an electrical contact to at least one of the edges, the electrical contact comprising an electrically conductive material that contacts only a fractional portion of the at least one edge of the semiconductor body to improve the performance of the solar cell.
22 . The elongate solar cell as claimed in claim 21 , wherein the electrically conductive material contacts a fractional portion of the at least one edge between about 0.01% and about 99% of the surface area of the edge.
23 . The elongate solar cell as claimed in claim 21 , wherein the electrically conductive material contacts a small portion of the at least one edge between about 0.01% and about 50% of the surface area of the edge.
24 . The process as claimed in claim 21 , comprising forming the electrically conductive material in elongate form and substantially centrally disposed along a longitudinal axis of the at least one edge of the semiconductor body.
25 . The process as claimed in claim 21 wherein the contact regions are of elongate form.
26 . The process as claimed in claim 21 the contact regions are of non-elongate form and are distributed over the at least one edge
27 . The process as claimed in any one of claims 21 to 26 wherein the electrically conductive material contacts the semiconductor body at mutually spaced contact regions of the edge.
28 . The process as claimed in claim 27 wherein regions of the edge not contacted by the electrically conductive material contacted by a dielectric material.
29 . The process as claimed in any one of claims 21 to 28 further comprising
forming a dielectric or electrically insulating coating on the at least one edge of the semiconductor body, wherein the coating comprises one or more openings therein to expose a fractional portion of the at least one edge of the semiconductor body.
30 . The process as claimed in claim 29 further comprising forming the electrically conductive material in the one or more openings to contact respective contact regions of the at least one edge exposed by the openings.
31 . The process as claimed in either of claims 29 to 30 further comprise forming heterojunction electrical contacts within the openings.
32 . The process as claimed in any one of claims 29 to 31 wherein the openings are formed by depositing the electrically conductive material over the coating, and driving the electrically conductive material through the coating at mutually spaced locations to form the openings.
33 . The process as claimed in claim 32 wherein the electrically conductive material is driven through the coating only at mutually spaced regions of the coating by localised heating by a process comprising selectively heating corresponding mutually spaced regions of the electrically conductive material.
34 . The process as claimed in claim 32 wherein the electrically conductive material is deposited only at mutually spaced regions on the coating, and is locally driven through the coating using a process of uniform heating.
35 . The process as claimed in claim 32 comprising selectively doping only those regions of the at least one surface of the semiconductor body exposed by the openings, and forming the electrically conductive material to contact the resulting doped regions.
36 . The process as claimed in any one of claims 21 to 35 wherein the electrically conductive material comprises a dopant species.
37 . The process as claimed in claim 36 wherein the contact regions are doped by selectively heating corresponding regions of the electrically conductive material formed over the dielectric coating to selectively drive the heated regions of the electrically conductive material through the dielectric coating to contact the edge of the semiconductor body and to drive the dopant species into the semiconductor body.
38 . The process as claimed in claim 36 wherein the contact regions are doped by selectively depositing the electrically conductive material at mutually spaced locations on the dielectric coating, and subsequently heating the electrically conductive material to drive it through the dielectric coating to contact the edge of the semiconductor body and to drive the dopant species into the semiconductor body.
39 . The process as claimed in any one of claims 21 to 38 wherein the faces of each elongate solar cell are doped with a dopant of a first polarity (either p-type or n-type), and an edge of the elongate solar cell doped discontinuously in mutually spaced doped regions with a dopant of a second polarity opposite to the first polarity (either n-type or p-type respectively), wherein the doped regions of the faces and the doped regions of the edge intersect or abut over only a relatively small portion of the length of each intersection of the edge and the corresponding face.
40 . A process for producing an elongate solar cell, the elongate solar cell comprising a semiconductor body comprising two mutually opposed faces, at least one of the faces being an active face for receiving incident light, and two mutually opposed edges substantially orthogonal to the faces, the edges comprising electrical contacts thereon for conducting electrical current generated by the solar cell from the light; the process comprising forming a plurality of mutually spaced doped regions in at least one of the edges so that the at least one edge is doped discontinuously to improve the performance of the solar cell.
41 . The process as claimed in claim 40 wherein the doped regions in the at least one edge occupy between about 0.01% and less then 100% of the at least one edge.
42 . The process as claimed in claim 40 wherein the doped regions in the at least one edge occupy approximately equal to or less than about one half (≈≦50%) of the at least one edge.