IP Library Granted Patent US 8,637,140
Granted Patent B2
US 8,637,140 · App. 13/267,651 · Granted Jan 28, 2014

Method for defining an electrically conductive metal structure on a three-dimensional element and a device made from the method

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Quick Facts
Patent No.
US 8,637,140
App. No.
13/267,651
Granted
Jan 28, 2014
Kind
B2
Abstract

A method for defining an electrically conductive metalized structure, which may comprise an electrode or trace, on the surface of a three-dimensional element. The three-dimensional element may comprise a glass microsphere or shell resonator. A laser direct write grayscale photolithographic process is used in conjunction with electrically conductive metal deposition processes to define one or more electrically conductive metal structures on the surfaces of the three dimensional element.

Claims (12)

1. A spherical element having an electrically conductive metal structure disposed thereon prepared by a process comprising the steps of:

providing a substrate comprising a first surface comprising a planar portion and a spherical element,

defining a continuous metal layer upon and in contact with a surface of the planar portion and with a surface of the spherical element,

defining a continuous photoresist layer over the metal layer,

defining a solid three-dimensional photoresist structure in the photoresist layer that is in contact with the metal layer on the spherical element and that is in contact with the metal layer on the planar portion,

exposing a continuous metal layer area that is in contact with the spherical element and with the planar portion,

removing the exposed continuous metal layer area,

removing the solid three-dimensional photoresist structure to define a continuous electrically conductive metal structure that is disposed on and in contact with the surface of the planar portion and disposed on and in contact with the surface of the spherical element.

2. The device of claim 1 where in a maskless photolithographic process defines the solid three-dimensional photoresist structure and comprises the use of an intensity modulated laser in a grayscale photolithographic process.

3. The device of claim 1 wherein the substrate comprises a silicon layer.

4. The device of claim 1 wherein the spherical element is a resonator element.

5. The device of claim 1 wherein the spherical element is a glass shell resonator element formed using a wafer scale glass blowing process.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 22, 2014
From: PARTNERS FOR GROWTH III, L.P.
To: PFG IP LLC
Reel/Frame 033793/0508 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 18, 2014
From: ISC8 INC.
To: PFG IP LLC
Reel/Frame 033777/0371 →
SECURITY AGREEMENT Recorded Dec 15, 2011
From: IRVINE SENSORS CORPORATION
To: PARTNERS FOR GROWTH III, L.P.
Reel/Frame 027387/0793 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 12, 2011
From: BOYD, W. ERIC; YAMAGUCHI, JAMES
To: IRVINE SENSORS CORPORATION
Reel/Frame 027047/0339 →