Light-emitting diode with textured substrate
View Patent ↗A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions.
1. A light-emitting diode (LED) device comprising:
a semiconductor substrate;
raised regions formed on the semiconductor substrate, the raised regions comprising a semiconductor material;
a first contact layer over the raised regions, the first contact layer having a non-planar surface, wherein the first contact layer is discontinuous between adjacent raised regions;
a non-planar active layer over the first contact layer; and
a second contact layer over the active layer, the second contact layer having a planar surface and being continuous over the raised regions.
2. The LED device of claim 1 , further comprising a dielectric region interposed between adjacent raised regions.
3. The LED device of claim 1 , wherein the semiconductor substrate comprises a bulk silicon substrate.
4. The LED device of claim 3 , wherein the bulk silicon substrate has a (100) surface orientation.
5. The LED device of claim 1 , wherein the raised regions comprise SiGe.
6. A light-emitting diode (LED) device comprising:
a first contact layer on a substrate, the first contact layer having a uniform thickness and a non-planar surface;
an active layer over the first contact layer, the active layer having a uniform thickness; a second contact layer over the active layer, the second contact layer having a planar surface and a varying thickness;
dielectric material interposed between adjacent ones of the active layers; and
one or more additional contact layers and one or more additional active layers, the second contact layer extending over the active layer and the one or more additional active layers.
7. The LED device of claim 6 , further comprising dielectric material interposed between adjacent ones of the first contact layers.
8. The LED device of claim 6 , wherein the substrate comprises a bulk silicon substrate having a (100) surface orientation.
9. The LED device of claim 6 , wherein the first contact layer overlies a SiGe region.
10. A light-emitting diode (LED) device comprising:
a plurality of first contact layers, each of the first contact layer having a non-planar surface;
a plurality of non-planar active layers, each of the non-planar active layers being over a respective one of the plurality of first contact layers; and
a second contact layer over the plurality of non-planar active layers;
a dielectric layer interposed between adjacent ones of the plurality of first contact layers or between adjacent ones of the plurality of non-planar active layers.
11. The LED device of claim 10 , wherein the second contact layer has a planar upper surface.
12. The LED device of claim 10 , wherein the dielectric layer extends above the plurality of non-planar active layers.
13. The LED device of claim 10 , further comprising a substrate below the plurality of first contact layers, the substrate comprising a bulk silicon substrate having a (100) surface orientation.
14. The LED device of claim 10 , wherein the first contact layer overlies a SiGe region.
15. The LED device of claim 14 , wherein the SiGe region has a varying thickness.