IP Library Patent Application 13272341
Patent Application
App. No. 13/272,341

Low Power Image Intensifier Device Comprising Black Silicon Detector Element

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Quick Facts
Patent No.
US None
App. No.
13/272,341
Abstract

A detector module which may comprise a black silicon detector for detecting incident radiation and generating a visible output to a display output pixel element such as one or more OLED elements. One or more vertically interconnected unit cells, which may be in the form of a plurality of vertically stacked and bonded layers, is disclosed having a detector layer comprising one or more black silicon detector elements, an amplification layer and a display layer having a dedicated display output pixel element. The layers are vertically interconnected by means of electrically conductive area interconnects such as electrically conductive through-silicon vias.

Claims (25)

1 . A vertically-interconnected unit cell comprising:

a detector layer element comprising a detector input and a detector output and comprising a detector pixel element,

an amplification layer element comprising an amplification input and an amplification output,

a display layer element comprising a display input and a display pixel output element, wherein the detector pixel element has a dedicated display output pixel element.

2 . The device of claim 1 wherein the detector pixel element is a black silicon detector pixel element.

3 . The device of claim 1 further comprising an electrically conductive area interconnect disposed between and in electrical connection with the output of at least one layer element and the input of at least one respective other layer element.

4 . The device of claim 1 wherein the display layer element comprises an OLED pixel element.

5 . The device of claim 1 wherein the amplification layer element comprises an analog preamplifier layer element and an analog display amplifier layer element.

6 . The device of claim 3 wherein the area interconnect comprises an electrically conductive through-silicon via.

7 . A stacked microelectronic module comprised of a plurality of vertically interconnected unit cells, each unit cell comprising:

a detector layer element comprising a detector input and a detector output and comprising a detector pixel element,

an amplification layer element comprising an amplification input and an amplification output, and,

a display layer element comprising a display input and a display output pixel element wherein at least one detector pixel element has a dedicated display output pixel element.

8 . The device of claim 6 wherein the detector pixel element is a black silicon detector pixel element.

9 . The device of claim 7 further comprising an electrically conductive area interconnect disposed between and in electrical connection with the output of at least one layer element and the input of at least one respective other layer element.

10 . The device of claim 7 wherein the display layer element comprises an OLED pixel element.

11 . The device of claim 7 wherein the amplification layer element comprises an analog preamplifier layer element and an analog display amplifier layer element.

12 . The device of claim 8 wherein the area interconnect comprises an electrically conductive through-silicon via.

13 . A method for image intensification comprising the steps of:

generating an electrical output signal from a detector pixel element in response to incident radiation on the input surface of the detector pixel element,

receiving the output signal at an amplifier input by means of an electrically conductive area interconnect,

amplifying the output signal to define an amplified output signal,

receiving the amplified output signal at a display input by means of an electrically conductive area interconnect and generating an output to a dedicated display output pixel element.

14 . The method of claim 12 wherein the detector pixel element is a black silicon detector pixel element.

15 . The method of claim 12 wherein the electrically conductive area interconnect comprises an electrically conductive through-silicon via.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 22, 2014
From: PARTNERS FOR GROWTH III, L.P.
To: PFG IP LLC
Reel/Frame 033793/0508 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 18, 2014
From: ISC8 INC.
To: PFG IP LLC
Reel/Frame 033777/0371 →
SECURITY AGREEMENT Recorded Dec 15, 2011
From: IRVINE SENSORS CORPORATION
To: PARTNERS FOR GROWTH III, L.P.
Reel/Frame 027387/0793 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 17, 2011
From: CARSON, JOHN C.; LUDWIG, DAVID
To: IRVINE SENSORS CORPORATION
Reel/Frame 027073/0209 →