Semiconductor device manufacturing method and manufacturing apparatus
A semiconductor device manufacturing method and manufacturing apparatus with which it is possible, when a wafer has a warp, to effectively peel off an ultraviolet peelable tape with ultraviolet irradiation of a short duration. Even when a wafer has a warp, by correcting the warp of the wafer with an ultraviolet transmitting plate, and uniformly irradiating an ultraviolet peelable tape attached to the wafer with ultraviolet light, it is possible to reduce a distance between an ultraviolet light source and the ultraviolet peelable tape. Also, by blocking heat from the ultraviolet light source with the ultraviolet transmitting plate, it is possible to suppress a rise in temperature of the wafer. As a result of this, it is possible to effectively peel the ultraviolet peelable tape from the wafer with ultraviolet irradiation of a short duration without any adhesive residue remaining.
1. A semiconductor device manufacturing method comprising:
providing a semiconductor wafer;
attaching an ultraviolet peelable tape to a first surface of the semiconductor wafer;
abutting an ultraviolet transmitting plate against the first surface of the semiconductor wafer to which the ultraviolet peelable tape is attached;
abutting a pressing member against a second surface of the semiconductor wafer;
clamping the semiconductor wafer between the ultraviolet transmitting plate and the pressing member;
transmitting ultraviolet light through the ultraviolet transmitting plate and irradiating the ultraviolet peelable tape with the ultraviolet light that was transmitted through the ultraviolet transmitting plate; and
peeling the ultraviolet peelable tape from the semiconductor wafer.
2. The semiconductor device manufacturing method according to claim 1 , wherein clamping the semiconductor wafer between the ultraviolet transmitting plate and the pressing member includes:
placing the semiconductor wafer on one of the ultraviolet transmitting plate and the pressing member; and
clamping the semiconductor wafer by moving the ultraviolet transmitting plate and pressing member relative to each other.
3. The semiconductor device manufacturing method according to claim 1 , wherein clamping the semiconductor wafer between the ultraviolet transmitting plate and the pressing member includes correcting a warp of the semiconductor wafer by clamping the semiconductor wafer between the ultraviolet transmitting plate and the pressing member.
4. The semiconductor device manufacturing method according to claim 1 , wherein the thickness of the semiconductor wafer is between about 80 μm and about 140 μm.
5. The semiconductor device manufacturing method according to claim 1 , wherein irradiating the ultraviolet peelable tape with the ultraviolet light includes irradiating the ultraviolet peelable tape with about 1000 mJ/cm 2 or more of ultraviolet light.
6. The semiconductor device manufacturing method according to claim 1 , wherein the ultraviolet peelable tape is peeled from the semiconductor wafer after the ultraviolet peelable tape is irradiated with the ultraviolet light that was transmitted through the ultraviolet transmitting plate.
7. The semiconductor device manufacturing method according to claim 1 , wherein an air flow cools the ultraviolet transmitting plate.