Spin torque magnetic integrated circuits and devices therefor
View Patent ↗Spin torque magnetic integrated circuits and devices therefor are described. In an example, a spin torque magnetic device for a logic circuit includes a majority gate structure. An output is coupled to the majority gate structure. Three inputs are also coupled to the majority gate structure.
1. A spin torque magnetic device for a logic circuit, the spin torque magnetic device comprising:
a majority gate structure;
an output coupled to the majority gate structure; and
three inputs coupled to the majority gate structure, wherein the majority gate structure comprises a first free ferromagnetic layer disposed above a substrate, and a tunnel dielectric layer disposed above the first free ferromagnetic layer.
2. The spin torque magnetic device of claim 1 , wherein, from a plan view perspective, the majority gate structure is in the form of a cross having four ends.
3. The spin torque magnetic device of claim 2 , wherein the output is coupled to a first of the four ends, and wherein the three inputs are coupled to the three remaining ends of the cross, respectively.
4. The spin torque magnetic device of claim 1 , wherein the output is configured to be used as an input to another gate structure.
5. The spin torque magnetic device of claim 4 , wherein the output is for inputting a magnetization signal into the other gate structure.
6. The spin torque magnetic device of claim 1 , wherein the device is a reconfigurable AND/OR gate.
7. The spin torque magnetic device of claim 1 , further comprising:
a sense amplifier coupled to the output, the sense amplifier configured to perform read-out of the output.
8. The spin torque magnetic device of claim 1 , further comprising:
a driver transistor coupled to one of the inputs, the driver transistor for passing current to the input.
9. The spin torque magnetic device of claim 1 , wherein the majority gate structure further comprises:
a coupling layer disposed on the first free ferromagnetic layer;
a second free ferromagnetic layer disposed on the coupling layer, wherein the tunnel dielectric layer is disposed above the second free ferromagnetic layer.