Liquid crystal display device
A liquid crystal display device having a high definition screen in which a pixel electrode is formed in a region surrounded by a gate line and a drain line, and a trapezoidal protrusion having an upper surface and inclined surfaces is formed below the gate line. Since a TFT is formed over a trapezoidal protrusion and a channel portion is formed over the upper surface and the inclined surfaces of the trapezoidal protrusion, the width of the channel portion can be enlarged compared to that of a channel portion formed over a plane. The pixel electrode is in contact with a source electrode at the inclined surface of the trapezoidal protrusion. This configuration allows the TFT and a contact of the pixel electrode and a source electrode to be formed over part of the trapezoidal protrusion.
1. A liquid crystal display device comprising:
a TFT substrate;
gate lines extending in a first direction and arranged in a second direction over the TFT substrate;
drain lines extending in the second direction and arranged in the first direction over the TFT substrate;
pixel electrodes each formed in a region surrounded by the gate lines and drain lines;
trapezoidal protrusions formed discretely in the first direction below the gate lines, each of the trapezoidal protrusions having an upper surface and inclined surfaces in the cross section taken along a plane orthogonal to the first direction;
a gate insulating film formed over the gate lines;
a semiconductor layer formed on the gate insulating film;
drain electrodes formed by the drain lines over the semiconductor layer;
source electrodes formed over the semiconductor layer; and
channel portions defined by the space between the drain electrodes and the source electrodes, each of the channel portions being formed covering the upper surface and the inclined surfaces of the trapezoidal protrusion;
wherein the pixel electrode and the source electrode are in contact with each other on the inclined surface of the trapezoidal protrusion.
2. A liquid crystal display device according to claim 1 , wherein an interlayer insulating film is formed in a region surrounded by the gate line and the drain line, and comb-shaped counter electrodes are formed on the insulating film.
3. A liquid crystal display device according to claim 1 , further comprising a counter substrate opposed to the TFT substrate by way of a liquid crystal layer and a counter electrode formed to the counter substrate.
4. A liquid crystal display device comprising:
a TFT substrate;
gate lines extending in a first direction and arranged in a second direction over the TFT substrate;
drain lines extending in the second direction and arranged in the first direction over the TFT substrate;
pixel electrodes each formed in a region surrounded by the gate lines and drain lines;
trapezoidal protrusions formed discretely in the first direction below the gate lines, each of the trapezoidal protrusions having an upper surface and inclined surfaces in the cross section taken along a plane orthogonal to the first direction;
a gate insulating film formed over the gate lines;
a semiconductor layer formed on the gate insulating film;
drain electrodes formed by the drain lines over the semiconductor layer;
source electrodes formed over the semiconductor layer;
channel portions defined by the space between the drain electrodes and the source electrodes, each of the channel portions being formed covering the upper surface and the inclined surfaces of the trapezoidal protrusion; and
an inorganic passivation film formed over the source electrode;
wherein the pixel electrode is formed on the inclined surface and the upper surface of the trapezoidal protrusion, and the pixel electrode is connected with the source electrode by way of a through hole formed in the organic passivation film above the upper surface of the trapezoidal protrusion.
5. A liquid crystal display device according to claim 4 , wherein an interlayer insulating film is formed in a region surrounded by the gate line and the drain line, and comb-shaped counter electrodes are formed on the interlayer insulating film.
6. A liquid crystal display device according to claim 4 , further comprising a counter substrate opposed to the TFT substrate by way of a liquid crystal layer and a counter electrode formed to the counter substrate.
7. A liquid crystal display device comprising:
a TFT substrate;
gate lines extending in a first direction and arranged in a second direction over the TFT substrate;
drain lines extending in the second direction and arranged in the first direction over the TFT substrate;
pixel electrodes each formed in a region surrounded by the gate lines and drain lines;
banks formed continuously in the first direction below the gate lines, each of the banks having an upper surface and inclined surfaces in the cross section taken along a plane orthogonal to the first direction;
a gate insulating film formed over the gate lines;
a semiconductor layer formed on the gate insulating film;
drain electrodes formed by the drain lines over the semiconductor layer;
source electrodes formed over the semiconductor layer; and
channel portions defined by the space between the drain electrodes and the source electrodes, each of the channel portions being formed covering the upper surface and the inclined surfaces of the bank;
wherein the pixel electrode and the source electrode are in contact with each other on the inclined surface of the bank.
8. A liquid crystal display device comprising:
a TFT substrate;
gate lines extending in a first direction and arranged in a second direction over the TFT substrate;
drain lines extending in the second direction and arranged in the first direction over the TFT substrate;
pixel electrodes each formed in a region surrounded by the gate lines and drain lines;
banks formed continuously in the first direction below the gate lines, each of the banks having an upper surface and inclined surfaces in the cross section taken along a plane orthogonal to the first direction;
a gate insulating film formed over the gate lines;
a semiconductor layer formed on the gate insulating film;
drain electrodes formed by the drain lines over the semiconductor layer;
source electrodes formed over the semiconductor layer;
channel portions defined by the space between the drain electrodes and the source electrodes, each of the channel portions being formed covering the upper surface and the inclined surfaces of the bank; and
an inorganic passivation film formed over the source electrode;
wherein the pixel electrode is formed on the inclined surface and the upper surface of the bank, and the pixel electrode is connected with the source electrode by way of a through hole formed in the organic passivation film above the upper surface of the bank.