IP Library › Granted Patent US 9,537,075
Granted Patent B2
US 9,537,075 · App. 13/286,339 · Granted Jan 3, 2017

Graphite structure, electronic component and method of manufacturing electronic component

Inventors: Daiyu Kondo (Kawasaki, JP); Shintaro Sato (Kawasaki, JP); Taisuke Iwai (Kawasaki, JP)
Assignee: FUJITSU LIMITED
H01L35/22C01B31/04H01L29/1606H01L35/32Y10T428/261
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,537,075
App. No.
13/286,339
Granted
Jan 3, 2017
Kind
B2
Abstract

The graphite structure includes a plurality of domains of graphite where a layer body of graphene sheets is curved in domelike, wherein the plurality of domains are arranged in plane, and the domains adjacent each other are in contact with each other.

Claims (37)

1. A graphite structure comprising:

a plurality of domed graphite domains,

a catalytic metal film having concavities and convexities, and

a substrate, in this order,

wherein the each domed graphite domain includes a plurality of curved graphene sheets layered on each other, the each domed graphite domain including a first part parallel to the substrate at a top of the domed graphite domain and a second part perpendicular to the substrate at a side of the domed graphite domain, the second part continuously connected to the first part and the catalytic metal film, the each domed graphite domain having a hollow portion between an inner surface of the domed graphite domains and the substrate, wherein

the plurality of domed graphite domains are arranged in plane, and

the domed graphite domains adjacent to each other are in direct contact with each other.

2. The graphite structure according to claim 1 , wherein

the size of the domains is 20 nm-500 nm.

3. The graphite structure according to claim 1 , wherein

the height of the domains is 20 nm-5000 nm.

4. An electronic component comprising:

a graphite structure including a plurality of domed graphite domains, a catalytic metal film having concavities and convexities and a substrate, in this order,

wherein the each domed graphite domain includes a plurality of curved graphene sheets layered on each other, the each domed graphite domain including a first part parallel to the substrate at a top of the domed graphite domain and a second part perpendicular to the substrate at a side of the domed graphite domain, the second part continuously connected to the first part and the catalytic metal film, the each domed graphite domain having a hollow portion between an inner surface of the domed graphite domains and the substrate, wherein the plurality of domed graphite domains are arranged in plane, and the domed graphite domains adjacent to each other are in direct contact with each other.

5. The electronic component according to claim 4 , comprising:

a thermoelectric conversion material film including the graphite structure;

a first electrode formed on one end of the thermoelectric material film and connected to the graphite structure; and

a second electrode formed on the other end of the thermoelectric conversion material film and connected to the graphite structure.

6. The electronic component according to claim 5 , wherein

the thermoelectric conversion film includes a plurality of the graphite structures, and the plurality of graphite structures are stacked with a resin layer formed therebetween.

7. The electronic component according to claim 4 , further comprising:

a plurality of linear structures of carbon atoms formed above the graphite structure.

8. The electronic component according to claim 7 , further comprising:

a filling layer filling in gaps among the plurality of linear structures.

9. The electronic component according to claim 7 , wherein

the plurality of linear structures are carbon nanotubes.

10. The graphite structure according to claim 1 , wherein

each of the plurality of domed graphite domains includes a side surface,

the domed graphite domains adjacent to each other are connected at the side surface.

11. The electronic component according to claim 4 , wherein

each of the plurality of domed graphite domains includes a side surface,

the domed graphite domains adjacent to each other are connected at the side surface.

12. The graphite structure according to claim 1 , wherein

the hollow portion is buried by resin.

13. The electronic component according to claim 4 , wherein

the hollow portion is buried by resin.

14. The graphite structure according to claim 1 , wherein the plurality of domed graphite domains is in conformity with the film thickness and configurations of the concavities and convexities of the catalytic metal film.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 17, 2025
From: FUJITSU LIMITED
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 073964/0516 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 27, 2024
From: FUJITSU LIMITED
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 069454/0333 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 2, 2011
From: KONDO, DAIYU; SATO, SHINTARO; IWAI, TAISUKE
To: FUJITSU LIMITED
Reel/Frame 027162/0377 →
Continuity (2)
Continuation PCTJP2009060934 · Jun 16, 2009
Related Publication 20120042922A1 · Feb 23, 2012