To suppress fluctuation in the threshold voltage of a transistor, to reduce the number of connections of a display panel and a driver IC, to achieve reduction in power consumption of a display device, and to achieve increase in size and high definition of the display device. A gate electrode of a transistor which easily deteriorates is connected to a wiring to which a high potential is supplied through a first switching transistor and a wiring to which a low potential is supplied through a second switching transistor; a clock signal is input to a gate electrode of the first switching transistor; and an inverted clock signal is input to a gate electrode of the second switching transistor. Thus, the high potential and the low potential are alternately applied to the gate electrode of the transistor which easily deteriorates.
1. A semiconductor device comprising:
a pixel portion formed over a substrate;
a scan line driver circuit formed over the substrate, the scan line driver circuit comprising:
a shift register comprising:
an output terminal;
a first transistor;
a second transistor;
a third transistor;
a fourth transistor;
a fifth transistor;
a sixth transistor;
a seventh transistor; and
an eighth transistor;
a first switch formed over the substrate; and
a second switch formed over the substrate,
wherein one of a source and a drain of the first transistor is directly connected to the output terminal,
wherein one of a source and a drain of the second transistor is directly connected to the output terminal,
wherein one of a source and a drain of the third transistor is directly connected to one of a source and a drain of the fourth transistor,
wherein a gate of the fourth transistor is directly connected to a gate of the second transistor,
wherein one of a source and a drain of the fifth transistor is directly connected to a gate of the first transistor,
wherein one of a source and a drain of the sixth transistor is directly connected to the gate of the first transistor,
wherein a gate of the sixth transistor is directly connected to the one of the source and the drain of the third transistor,
wherein one of a source and a drain of the seventh transistor is directly connected to the gate of the first transistor,
wherein one of a source and a drain of the eighth transistor is directly connected to the one of the source and the drain of the third transistor,
wherein a gate of the eighth transistor is directly connected to the gate of the first transistor,
wherein a gate of the fifth transistor is directly connected to the other of the source and the drain of the fifth transistor,
wherein a clock signal is input to a gate of the third transistor,
wherein the output terminal is operationally connected to a scan line,
wherein a wiring is electrically connected to a first signal line via the first switch,
wherein the wiring is electrically connected to a second signal line via the second switch,
wherein the wiring is electrically connectable to a driver IC, and
wherein the second transistor comprises a channel region comprising an oxide semiconductor.
2. The semiconductor device according to claim 1 , wherein the oxide semiconductor comprises In and Zn.
3. The semiconductor device according to claim 2 , wherein the oxide semiconductor comprises InGaZnO.
4. The semiconductor device according to claim 3 , wherein the oxide semiconductor comprises a-InGaZnO.
5. The semiconductor device according to claim 1 ,
wherein the clock signal is input to the other of the source and the drain of the first transistor, and
wherein an inverted signal of the clock signal is input to a gate of the second transistor.
6. A semiconductor device comprising:
a pixel portion formed over a substrate;
a scan line driver circuit formed over the substrate, the scan line driver circuit comprising:
a shift register comprising:
an output terminal;
a first transistor;
a second transistor;
a third transistor;
a fourth transistor;
a fifth transistor;
a sixth transistor;
a seventh transistor; and
an eighth transistor; and
a signal line driver circuit comprising:
a first switch formed over the substrate;
a second switch formed over the substrate; and
a driver IC formed by utilizing a single crystalline substrate,
wherein one of a source and a drain of the first transistor is directly connected to the output terminal,
wherein one of a source and a drain of the second transistor is directly connected to the output terminal,
wherein one of a source and a drain of the third transistor is directly connected to one of a source and a drain of the fourth transistor,
wherein a gate of the fourth transistor is directly connected to a gate of the second transistor,
wherein one of a source and a drain of the fifth transistor is directly connected to a gate of the first transistor,
wherein one of a source and a drain of the sixth transistor is directly connected to the gate of the first transistor,
wherein a gate of the sixth transistor is directly connected to the one of the source and the drain of the third transistor,
wherein one of a source and a drain of the seventh transistor is directly connected to the gate of the first transistor,
wherein one of a source and a drain of the eighth transistor is directly connected to the one of the source and the drain of the third transistor,
wherein a gate of the eighth transistor is directly connected to the gate of the first transistor,
wherein a gate of the fifth transistor is directly connected to the other of the source and the drain of the fifth transistor,
wherein a clock signal is input to a gate of the third transistor,
wherein the output terminal is operationally connected to a scan line,
wherein a wiring is electrically connected to a first signal line via the first switch,
wherein the wiring is electrically connected to a second signal line via the second switch,
wherein the wiring is electrically connected to the driver IC, and
wherein the second transistor comprises a channel region comprising an oxide semiconductor.
7. The semiconductor device according to claim 6 , wherein the oxide semiconductor comprises In and Zn.
8. The semiconductor device according to claim 7 , wherein the oxide semiconductor comprises InGaZnO.
9. The semiconductor device according to claim 8 , wherein the oxide semiconductor comprises a-InGaZnO.
10. The semiconductor device according to claim 6 ,
wherein the clock signal is input to the other of the source and the drain of the first transistor, and
wherein an inverted signal of the clock signal is input to a gate of the second transistor.
11. A semiconductor device comprising:
a pixel portion formed over a substrate; and
a scan line driver circuit formed over the substrate, the scan line driver circuit comprising:
a shift register comprising:
an output terminal;
a first transistor;
a second transistor;
a third transistor;
a fourth transistor;
a fifth transistor;
a sixth transistor;
a seventh transistor; and
an eighth transistor,
wherein one of a source and a drain of the first transistor is directly connected to the output terminal,
wherein one of a source and a drain of the second transistor is directly connected to the output terminal,
wherein one of a source and a drain of the third transistor is directly connected to one of a source and a drain of the fourth transistor,
wherein a gate of the fourth transistor is directly connected to a gate of the second transistor,
wherein one of a source and a drain of the fifth transistor is directly connected to a gate of the first transistor,
wherein one of a source and a drain of the sixth transistor is directly connected to the gate of the first transistor,
wherein a gate of the sixth transistor is directly connected to the one of the source and the drain of the third transistor,
wherein one of a source and a drain of the seventh transistor is directly connected to the gate of the first transistor,
wherein one of a source and a drain of the eighth transistor is directly connected to the one of the source and the drain of the third transistor,
wherein a gate of the eighth transistor is directly connected to the gate of the first transistor,
wherein a gate of the fifth transistor is directly connected to the other of the source and the drain of the fifth transistor,
wherein a clock signal is input to a gate of the third transistor, and
wherein the second transistor comprises a channel region comprising an oxide semiconductor.
12. The semiconductor device according to claim 11 , wherein the oxide semiconductor comprises In and Zn.
13. The semiconductor device according to claim 12 , wherein the oxide semiconductor comprises InGaZnO.
14. The semiconductor device according to claim 13 , wherein the oxide semiconductor comprises a-InGaZnO.
15. The semiconductor device according to claim 11 ,
wherein the clock signal is input to the other of the source and the drain of the first transistor, and
wherein an inverted signal of the clock signal is input to a gate of the second transistor.