Electrostatic ion trap
View Patent ↗An ion trap includes an electrode structure, including a first and a second opposed mirror electrodes and a central lens therebetween, that produces an electrostatic potential in which ions are confined to trajectories at natural oscillation frequencies, the confining potential being anharmonic. The ion trap also includes an AC excitation source having an excitation frequency f that excites confined ions at a frequency of about twice the natural oscillation frequency of the ions, the AC excitation frequency source preferably being connected to the central lens. In one embodiment, the ion trap includes a scan control that mass selectively reduces a frequency difference between the AC excitation frequency and about twice the natural oscillation frequency of the ions.
1. An ion trap comprising:
an electrode structure, including first and second opposed mirror electrodes and a central lens therebetween, that produces an electrostatic potential in which ions are confined to trajectories at natural oscillation frequencies, the confining potential being anharmonic; and
an AC excitation source having an excitation frequency ƒ that excites confined ions at a frequency of about twice a natural oscillation frequency of the ions, the AC excitation source being connected to the central lens.
2. The ion trap of claim 1 , further including a scan control that sweeps the AC excitation frequency.
3. The ion trap of claim 2 , wherein the scan control sweeps the AC excitation frequency f at a sweep rate in a direction from an excitation frequency higher than twice the natural oscillation frequency of the ions.
4. The ion trap of claim 2 , wherein the scan control sweeps the AC excitation frequency f at a sweep rate in a direction from an excitation frequency lower than twice the natural oscillation frequency of the ions.
5. The ion trap of claim 4 , wherein the sweep rate is set such that d(1/f n )/dt is about equal to a constant and n is greater than zero.
6. The ion trap of claim 5 , wherein n is approximately equal to 1.
7. The ion trap of claim 2 , wherein the scan control sweeps a magnitude V of the electrostatic potential at a sweep rate in a direction such that twice the natural oscillation frequency of the ions changes from a frequency lower than the frequency of the AC excitation source.
8. The ion trap of claim 2 , wherein the scan control sweeps the magnitude V of the electrostatic potential at a sweep rate in a direction such that twice the natural oscillation frequency of the ions changes from a frequency higher than the frequency of the AC excitation source.
9. The ion trap of claim 1 , wherein the first opposed mirror electrode of the electrode structure includes
a) a first plate-shaped electrode with at least one aperture, located off-axis with respect to an axis of the opposed mirror electrode structure; and
b) a second electrode shaped in the form of a cup, open towards the central lens, with a centrally located aperture; and
the second opposed mirror electrode of the electrode structure includes
i) a first plate-shaped electrode with an axially located aperture; and
ii) a second electrode shaped in the form of a cup, open towards the central lens, with a centrally located aperture; and
the central lens is plate-shaped and includes an axially located aperture.
10. The ion trap of claim 1 , configured as a mass spectrometer, further including an ion source that includes at least one electron emissive source that creates ions by electron impact ionization of a gaseous species, and an ion detector.
11. The ion trap of claim 10 , wherein the at least one electron emissive source is a hot filament.
12. The ion trap of claim 10 , wherein the at least one electron emissive source is a cold electron emissive source.
13. The ion trap of claim 10 , wherein the at least one electron emissive source is located off-axis relative to the electrode structure.
14. The ion trap of claim 13 , wherein electrons generated by the at least one electron emissive source are injected at an angle of between about 20 degrees and about 30 degrees away from an axis normal to an axis along the electrode structure.
15. The ion trap of claim 10 , wherein the ion detector is a charge-sensitive transimpedance amplifier.
16. The ion trap of claim 10 , wherein the ion detector detects ions by measuring the amount of RF power absorbed from the AC excitation source as the AC excitation source frequency varies.
17. The ion trap of claim 10 , wherein the ion detector detects ions by measuring the change in electrical impedance of the electrode structure as the AC excitation frequency varies.
18. The ion trap of claim 10 , wherein the ion detector detects ions by measuring the current induced by image charges as the AC excitation frequency varies.
19. The ion trap of claim 10 , wherein the ion detector detects ions by measuring the amount of RF power absorbed from the AC excitation source as the magnitude of the electrostatic potential varies.
20. The ion trap of claim 10 , wherein the ion detector detects ions by measuring the change in electrical impedance of the electrode structure as the magnitude of the electrostatic potential varies.
21. The ion trap of claim 10 , wherein the ion detector detects ions by measuring the current induced by image charges as the magnitude of the electrostatic potential varies.
22. An ion trap comprising:
an electrode structure that produces an electrostatic potential in which ions are confined to trajectories at natural oscillation frequencies, the confining potential being anharmonic;
an AC excitation source, connected to the electrode structure, having an excitation frequency that excites confined ions at a frequency that is about an integer multiple of natural oscillation frequency of the ions;
nonvolatile memory storing control parameters; and
control electronics operatively connected to the AC excitation source and to the electrode structure, the control electronics controlling the AC excitation source and the electrostatic potential using the control parameters.
23. The ion trap of claim 22 , wherein the nonvolatile memory and control electronics are integrated with the electrode structure.
24. The ion trap of claim 22 , wherein the control parameters include configuration and calibration parameters and sensitivity factors, or any combination thereof.
25. The ion trap of claim 24 , wherein configuration parameters include magnitudes of electrostatic potentials applied on the electrode structure that produce the electrostatic potential in which ions are confined, and amplitude and frequency settings for the AC excitation source, calibration parameters include voltage and current input and output calibration parameters of the ion trap, and sensitivity factors include a conversion factor from natural frequency of oscillation of ions to ion mass-over-charge (m/q) ratio.
26. The ion trap of claim 22 , wherein the excitation frequency excites confined ions at a frequency of about twice the natural oscillation frequency of the ions.
27. A method of trapping ions in an ion trap comprising:
producing an anharmonic electrostatic potential in which ions are confined to trajectories at natural oscillation frequencies, in an electrode structure that includes first and second opposed mirror electrodes and a central lens therebetween; and
exciting confined ions at a frequency of about twice the natural oscillation frequency of the ions with an AC excitation source having an excitation frequency f, the AC excitation source being connected to the central lens.
28. The method of claim 27 , further including the step of scanning the excitation frequency of the AC excitation source.
29. The method of claim 28 , wherein scanning the excitation frequency is performed at a sweep rate from an excitation frequency higher than about twice the natural oscillation frequency of the ions, to mass selectively achieve autoresonance as the frequency difference approaches zero.
30. The method of claim 28 , wherein scanning the excitation frequency is performed at a sweep rate from an excitation frequency lower than about twice the natural oscillation frequency of the ions.
31. The method of claim 30 , wherein the sweep rate is set such that d(1/f n )/dt is about equal to a constant and n is greater than zero.
32. The method of claim 31 , wherein n is approximately equal to 1.
33. The method of claim 28 , wherein scanning the excitation frequency includes the step of sweeping a magnitude V of the electrostatic potential at a sweep rate in a direction such that twice the natural oscillation frequency of the ions changes from a frequency lower than the frequency of the AC excitation source.
34. The method of claim 28 , wherein scanning the excitation frequency includes the step of sweeping a magnitude V of the electrostatic potential at a sweep rate in a direction such that twice the natural oscillation frequency of the ions changes from a frequency higher than the frequency of the AC excitation source.
35. The method of claim 27 , wherein the first opposed mirror electrode structure includes a first plate-shaped electrode with at least one aperture, located off-axis with respect to an axis of the opposed mirror electrode structure and a second electrode shaped in the form of a cup, open towards the central lens, with a centrally located aperture, and the second opposed mirror electrode structure includes a first plate-shaped electrode with an axially located aperture and a second electrode shaped in the form of a cup, open toward the central lens, with a centrally located aperture, and the central lens is plate-shaped and includes an axially located aperture.
36. The method of claim 27 , further including using an ion source that includes at least one electron emissive source that creates ions by electron impact ionization of a gaseous species, and an ion detector, configured as a mass spectrometer.
37. The method of claim 36 , wherein the at least one electron emissive source is a hot filament.
38. The method of claim 36 , wherein the at least one electron emissive source is a cold electron emissive source.
39. The method of claim 36 , wherein the at least one electron emissive source is located off-axis relative to the electrode structure.
40. The method of claim 39 , wherein electrons generated by the at least one electron emissive source are injected at an angle of between about 20 degrees and about 30 degrees away from an axis normal to an axis along the electrode structure.
41. The method of claim 36 , wherein the ion detector is a charge-sensitive transimpedance amplifier.
42. The method of claim 36 , wherein the ion detector detects ions by measuring the amount of RF power absorbed from the AC excitation source as the AC excitation source frequency varies.
43. The method of claim 36 , wherein the ion detector detects ions by measuring the change in electrical impedance of the electrode structure as the AC excitation frequency varies.
44. The method of claim 36 , wherein the ion detector detects ions by measuring the current induced by image charges as the AC excitation frequency varies.
45. The method of claim 36 , wherein the ion detector detects ions by measuring the amount of RF power absorbed from the AC excitation source as the magnitude of the electrostatic potential varies.
46. The method of claim 36 , wherein the ion detector detects ions by measuring the change in electrical impedance of the electrode structure as the magnitude of the electrostatic potential varies.
47. The method of claim 36 , wherein the ion detector detects ions by measuring the current induced by image charges as the magnitude of the electrostatic potential varies.
48. A method of trapping ions in an ion trap, comprising:
producing an anharmonic electrostatic potential in an electrode structure in which ions are confined to trajectories at natural oscillation frequencies;
exciting confined ions at a frequency of about an integer multiple of the natural oscillation frequency of the ions with an AC excitation source connected to the electrode structure and having an excitation frequency;
storing control parameters in nonvolatile memory; and
controlling the AC excitation source and the electrostatic potential using the control parameters and control electronics operatively connected to the AC excitation source and to the electrode structure.
49. The method of claim 48 , wherein the nonvolatile memory and control electronics are integrated with the electrode structure.
50. The method of claim 48 , wherein the control parameters include configuration and calibration parameters and sensitivity factors, or any combination thereof.
51. The method of claim 50 , wherein configuration parameters include magnitudes of electrostatic potentials applied on the electrode structure that produce the electrostatic potential in which ions are confined, and amplitude and frequency settings for the AC excitation source, calibration parameters include voltage and current input and output calibration parameters of the ion trap, and sensitivity factors include a conversion factor from natural frequency of oscillation of ions to ion mass-over-charge (m/q) ratio.
52. The method of claim 48 , wherein the excitation frequency excites confined ions at a frequency of about twice the natural oscillation frequency of the ions.