Impact ionization devices under dynamic electric fields
Apparatus, systems, and methods relate to use of a time-varying bias for application to an avalanche photodiode. Embodiments include systems and methods of determining an appropriate time-varying bias for application to an avalanche photodiode in linear mode. Avalanche photodiode having appropriate parameters may also be determined. Additional apparatus, systems, and methods are disclosed.
1. A method comprising:
receiving a set of optical pulses at an avalanche photodiode in linear mode or equivalent below-breakdown mode, each optical pulse having a beginning and an end;
varying a reverse bias applied to the avalanche photodiode during the reception of each optical pulse at the avalanche photodiode, the reverse bias having a highest reverse bias level and a lowest reverse bias level during the reception of each optical pulse such that the highest reverse bias level is placed within a first half of each optical pulse received and the lowest reverse bias level is placed within a second half of each optical pulse eliminating impact ionizations in the avalanche photodiode near the end of each optical pulse received; and
outputting from the avalanche photodiode an electrical signal that corresponds to the received optical pulse.
2. The method of claim 1 , wherein varying the reverse bias includes varying the reverse bias with respect to a first half and a second half of a bit period of each optical pulse such that eliminating impact ionizations occurs in the second half containing the end of the optical pulse.
3. The method of claim 1 , wherein varying the reverse bias includes applying a sinusoidal waveform.
4. The method of claim 1 , wherein varying the reverse bias includes applying a sawtooth waveform.
5. The method of claim 1 , wherein varying the reverse bias includes apply a triangular waveform.
6. The method of claim 1 , wherein receiving the optical pulse at the avalanche photodiode includes receiving an optical pulse at an InP avalanche photodiode.
7. The method of claim 1 , wherein receiving the optical pulse at the avalanche photodiode includes receiving an optical pulse at an avalanche photodiode having a multiplication region containing an InAlAs—InAlGaAs heterostructure.
8. A system comprising:
an avalanche photodiode arranged in linear mode to receive a set of optical pulses from an optical medium, each optical pulse having a beginning and an end, the avalanche photodiode arranged to output an electrical signal that corresponds to the received set of optical pulses; and
a bias generator coupled to the avalanche photodiode, the bias generator arranged to apply bit-synchronized time-varying bias to the avalanche photodiode such that a reverse bias applied to the avalanche photodiode varies during the reception of the optical pulse at the avalanche photodiode, the reverse bias having a highest reverse bias level and a lowest reverse bias level during the reception of each optical pulse such that the highest reverse bias level is placed within a first half of each optical pulse received and the lowest reverse bias level is placed within a second half of each optical pulse to eliminate impact ionizations in the avalanche photodiode near the end of each optical pulse received.
9. The system of claim 8 , wherein bias generator is structured to apply a reverse bias to the avalanche photodiode that varies with respect to a first half and a second half of a bit period of each optical pulse such that elimination of impact ionizations in the avalanche photodiode occurs in the second half containing the end of the optical pulse.
10. The system of claim 8 , wherein the bias generator includes a waveform circuit structured to apply a sinusoidal waveform.
11. The system of claim 8 , wherein the bias generator includes a waveform circuit structured to apply a sawtooth waveform.
12. The system of claim 8 , wherein the bias generator includes a waveform circuit structured to apply a triangular waveform.
13. The system of claim 8 , wherein the avalanche photodiode includes an InP avalanche photodiode.
14. The system of claim 8 , wherein the avalanche photodiode includes an avalanche photodiode having a multiplication region containing an InAlAs—InAlGaAs hetero structure.
15. The system of claim 8 , wherein the system includes a transimpedance amplifier coupled to the bias generator and the avalanche photodiode.
16. The system of claim 15 , wherein the transimpedance amplifier is structured as a differential transimpedance amplifier using a dummy avalanche photodiode, in addition to the avalanche photodiode, arranged to receive the time-varying bias as a reverse bias that is applied to the avalanche photodiode to partially or fully cancel or offset the time-varying bias that goes through the avalanche photodiode that would otherwise be present in the electrical signal output.
17. The system of claim 8 , wherein the optical medium includes a single mode fiber such that the avalanche photodiode arranged to receive an optical pulse from the single mode fiber.
18. The system of claim 17 , wherein the single mode fiber is coupled to a digital communications network.
19. The system of claim 8 , wherein characteristics of the bit-synchronized time-varying bias are selected to provide a maximal gain bandwidth product, lowest determined receiver bit-error rate, and best determined receiver sensitivity.