Semiconductor device and method of manufacturing the same
A semiconductor device includes a first line pattern and a second line pattern formed in parallel on a semiconductor substrate, third line patterns formed in parallel between the first line pattern and the second line pattern, fourth line patterns formed in parallel between the first line pattern and the second line pattern, a first connection structure configured to couple a first of the third line patterns with a first of the fourth lines patterns, which are adjacent to the first line pattern, and a second connection structure configured to couple a second of the first lines patterns with a second of the fourth lines patterns, which are adjacent to the second line pattern.
1. A semiconductor device, comprising:
a first line pattern and a second line pattern formed in parallel over a semiconductor substrate;
third line patterns formed in parallel between the first line pattern and the second line pattern;
fourth line patterns formed in parallel between the first line pattern and the second line pattern;
a first connection structure configured to couple a first of the third line patterns with a first of the fourth line patterns, which are adjacent to the first line pattern; and
a second connection structure configured to couple a second of the third line patterns with a second of the fourth line patterns, which are adjacent to the second line pattern,
wherein the first of the third line patterns and the second of the third line patterns are parallel,
the first of the third line patterns and the first of the fourth line patterns are collinear,
one end of the first of the third line patterns and one end of the first of the fourth line patterns are structurally separated to be spaced apart from each other and coupled to the first connection structure, and
the other end of the first of the third line patterns and the other end of the first of the fourth line patterns extend in opposite directions to each other, and extension directions are in parallel with the semiconductor substrate.
2. The semiconductor device of claim 1 , wherein the first connection structure comprises:
a first via plug formed between the semiconductor substrate and the first of the third line patterns and coupled to the first of the third line patterns at the top thereof;
a second via plug formed between the semiconductor substrate and the first of the fourth line patterns and coupled to the first of the fourth line patterns at the top thereof; and
a first conductive pad configured to couple bottoms of the first and second via plugs,
wherein the second connection structure comprises:
a third via plug formed between the semiconductor substrate and the second of the third line patterns and coupled to the second of the third line patterns at the top thereof;
a fourth via plug formed between the semiconductor substrate and the second of the fourth line patterns and coupled to the second of the fourth line patterns at the top thereof; and
a second conductive pad configured to couple bottoms of the third and fourth via plugs.
3. The semiconductor device of claim 1 , wherein the first connection structure comprises:
a first via plug formed on the first of the third line patterns;
a second via plug formed on the first of the fourth line patterns; and
a first conductive pad configured to couple tops of the first and second via plugs,
wherein the second connection structure comprises: a third via plug formed on the second of the third line patterns;
a fourth via plug formed on the second of the fourth line patterns; and
a second conductive pad configured to couple tops of the third and fourth via plugs.
4. The semiconductor device of claim 1 , further comprising:
a transistor formed in the semiconductor substrate;
a third connection structure configured to couple a source of the transistor and a third of the third line patterns which is formed between the first and second of the third line patterns; and
a fourth connection structure configured to couple a drain of the transistor and a third of the fourth line patterns which is formed between the first and second of the fourth line patterns.