DRAM security erase
In a method of erasing data, a wordline of the DRAM array is set active, and signals develop on bitlines according to flows of charge between memory cells coupled to the wordline and the respective bitlines. Sense amplifiers connected to the respective bitlines can remain off such that the sense amplifiers do not amplify the signals to storable signal levels. Thereafter, when the wordline is set inactive again, insufficient charge remains in the memory cells coupled to the wordline to represent data such that the data stored in memory cells coupled to the wordline are erased. These steps can be performed using each of the wordlines of a selected range of the DRAM array or all of the DRAM array so as to erase the data stored in the selected range or in all of the DRAM array.
1. A method of erasing data stored in a dynamic random access memory (DRAM) array, comprising:
(a) setting a wordline of the DRAM array to an active state, thereby causing charge to flow between memory cells coupled to the wordline and respective bitlines according to the data stored in the memory cells, wherein signals develop on the respective bitlines according to the flows of charge between the memory cells coupled to the wordline and the respective bitlines;
(b) while maintaining sense amplifiers connected to the respective bitlines in inactive states in which the sense amplifiers do not amplify the signals to storable signal levels, setting the wordline to an inactive state such that insufficient charge remains in the memory cells coupled to the wordline, thereby erasing the data stored in the memory cells coupled to the wordline; and
(c) repeating steps (a) and (b) using each of a remaining number of wordlines of a selected range of the memory array so as to erase the data stored in the selected range.
2. The method as claimed in claim 1 , wherein the selected range in step (c) is the entire memory array, so as to erase the data stored in the entire memory array.
3. The method as claimed in claim 1 , wherein the selected range in step (c) is less than the entire memory array.
4. The method as claimed in claim 1 , wherein step (a) includes selecting the wordline using an address counter.
5. The method as claimed in claim 4 , wherein the address counter is a refresh address counter.
6. The method as claimed in claim 1 , further comprising precharging the bitlines to a first voltage level before step (a).
7. The method as claimed in claim 6 , wherein the first voltage level is an intermediate level between a high signal voltage level and a low signal voltage level at which “1”s and “0”s, respectively, are stored in the memory cells coupled to the wordline.
8. The method as claimed in claim 7 , wherein the step of precharging the bitlines is performed by setting precharge devices connected to the bitlines to active states, the method further comprising maintaining precharge devices connected to the bitlines in inactive states during the maintaining of the sense amplifiers in the inactive states.
9. The method as claimed in claim 1 , wherein the data storage elements include capacitors.
10. A method of erasing data stored in a dynamic random access memory (DRAM) array, comprising:
(a) while maintaining precharge devices coupled to bitlines of the DRAM array in active states in which the bitlines are maintained at one or more predetermined voltage levels, setting a wordline of the DRAM array to an active state, such that voltages in memory cells coupled to the wordline are charged towards the one or more predetermined voltage levels regardless of the data stored in the memory cells;
(b) while maintaining sense amplifiers connected to the bitlines in inactive states, setting the wordline to an inactive state such that the memory cells store charge according to the one or more predetermined voltage levels, thereby erasing the data stored in the memory cells; and
(c) repeating steps (a) and (b) using each of a remaining number of wordlines of a selected range of the memory array so as to erase the data stored in the selected range.
11. The method as claimed in claim 10 , wherein the selected range in step (c) is the entire memory array, so as to erase the data stored in the entire memory array.
12. The method as claimed in claim 10 , wherein the selected range in step (c) is less than the entire memory array.
13. The method as claimed in claim 10 , wherein step (a) includes selecting the wordline using an address counter.
14. The method as claimed in claim 13 , wherein the address counter is a refresh address counter.
15. The method as claimed in claim 10 , wherein the one or more predetermined voltage levels is a supply voltage level.
16. The method as claimed in claim 10 , wherein the one or more predetermined voltage levels is a reference voltage level.
17. The method as claimed in claim 10 , wherein the one or more predetermined voltage levels correspond to an intermediate level approximately equal to an average of the supply voltage level and the reference voltage level.
18. The method as claimed in claim 10 , wherein the step of maintaining precharge devices coupled to bitlines of the DRAM array in active states in which the bitlines are maintained at one or more predetermined voltage levels includes maintaining some of the bitlines during said step at a first predetermined voltage level and maintaining others of the bitlines during said step at a second predetermined voltage level different from the first predetermined voltage level.
19. A memory including a dynamic random access memory (DRAM) array, comprising:
a DRAM array having memory cells, wordlines and bitlines coupled to the memory cells; and
sense amplifiers,
the memory being configured to perform a method of operation including:
(a) setting a wordline of the DRAM array to an active state, thereby causing charge to flow between memory cells coupled to the wordline and respective bitlines according to the data stored in the memory cells, wherein signals develop on the respective bitlines according to the flows of charge between the memory cells coupled to the wordline and the respective bitlines;
(b) while maintaining sense amplifiers connected to the respective bitlines in inactive states in which the sense amplifiers do not amplify the signals to storable signal levels, setting the wordline to an inactive state such that insufficient charge remains in the memory cells coupled to the wordline, thereby erasing the data stored in the memory cells coupled to the wordline; and
(c) repeating steps (a) and (b) using each of a remaining number of wordlines of a selected range of the memory array so as to erase the data stored in the selected range.
20. The memory as claimed in claim 19 , wherein the selected range in step (c) is the entire DRAM array, so as to erase the data stored in the entire DRAM array.
21. The memory as claimed in claim 19 , wherein the selected range in step (c) is less than the entire DRAM array.
22. The memory as claimed in claim 19 , wherein step (a) includes selecting the wordline using an address counter of the memory.
23. The memory as claimed in claim 22 , wherein the memory includes a refresh address counter, and the address counter is the refresh address counter.
24. A system comprising a chip embodying a memory according to claim 19 and one or more other electronic components electrically connected to the chip.
25. A system as claimed in claim 24 , further comprising a housing, said chip and said other electronic components being mounted to said housing.
26. A memory including a dynamic random access memory (DRAM) array, comprising:
a DRAM array having memory cells, and wordlines and bitlines coupled to the memory cells;
sense amplifiers; and
precharge devices coupled to the bitlines, the precharge devices configured to precharge the bitlines to a predetermined voltage level,
the memory being configured to perform a method of operation including:
(a) while maintaining the precharge devices in active states in which the bitlines are maintained at a predetermined voltage level, setting a wordline of the DRAM array to an active state, such that voltages in memory cells coupled to the wordline are charged towards the predetermined voltage level regardless of the data stored in the memory cells;
(b) while maintaining sense amplifiers connected to the bitlines in inactive states, setting the wordline to an inactive state such that the memory cells store charge according to the predetermined voltage levels, thereby erasing the data stored in the memory cells; and
(c) repeating steps (a) and (b) using each of a remaining number of wordlines of a selected range of the memory array so as to erase the data stored in the selected range.
27. The memory as claimed in claim 26 , wherein the predetermined voltage level corresponds to a supply voltage level.
28. The memory as claimed in claim 26 , wherein the predetermined voltage level corresponds to a reference voltage level.
29. The memory as claimed in claim 26 , wherein the predetermined voltage level corresponds to an intermediate level approximately equal to an average of the supply voltage level and the reference voltage level.
30. The memory as claimed in claim 26 , wherein the step of maintaining precharge devices coupled to bitlines of the DRAM array in active states in which the bitlines are maintained at one or more predetermined voltage levels includes maintaining some of the bitlines during said step at a first predetermined voltage level and maintaining others of the bitlines during said step at a second predetermined voltage level different from the first predetermined voltage level.
31. A system comprising a chip incorporating a chip embodying a memory according to claim 26 and one or more other electronic components electrically connected to the chip.
32. A system as claimed in claim 31 , further comprising a housing, said chip and said other electronic components being mounted to said housing.