Method for producing photovoltaic cell
View Patent ↗The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second n-type diffusion layer forming composition which includes an n-type impurity-containing glass powder and a dispersion medium and in which a concentration of the n-type impurity is lower than that of the first n-type diffusion layer forming composition, where the first n-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first n-type diffusion layer forming composition and the second n-type diffusion layer forming composition are applied to form an n-type diffusion layer; and forming an electrode on the partial region.
1. A method for producing a photovoltaic cell, comprising:
applying, on a partial region of one surface side of a semiconductor substrate, a first n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium;
applying, on at least a region other than the partial region on the surface of the semiconductor substrate where the first n-type diffusion layer forming composition is applied, a second n-type diffusion layer forming composition which includes an n-type impurity-containing glass powder and a dispersion medium and in which a concentration of the n-type impurity is lower than that of the first n-type diffusion layer forming composition;
heat-treating the semiconductor substrate on which the first n-type diffusion layer forming composition and the second n-type diffusion layer forming composition are applied to form an n-type diffusion layer; and
forming an electrode on the partial region.
2. The method for producing a photovoltaic cell according to claim 1 ,
wherein the n-type impurity includes at least one kind of element selected from the group consisting of P (phosphorus) and Sb (antimony).
3. The method for producing a photovoltaic cell according to claim 1 ,
wherein the n-type impurity-containing glass powder includes,
at least one kind of n-type impurity-containing material selected from the group consisting of P 2 O 3 , P 2 O 5 , and Sb 2 O 3 , and
at least one kind of glass component material selected from the group consisting of SiO 2 , K 2 O, Na 2 O, Li 2 O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, V 2 O 5 , SnO, ZrO 2 , TiO 2 , and MoO 3 .
4. A method for producing a photovoltaic cell, comprising:
applying, on a partial region of one surface side of a semiconductor substrate, a third n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium;
heat-treating the semiconductor substrate on which the third n-type diffusion layer forming composition is applied in an atmosphere including the n-type impurity to form an n-type diffusion layer; and
forming an electrode on the partial region.
5. The method for producing a photovoltaic cell according to claim 4 ,
wherein the n-type impurity includes at least one kind of element selected from the group consisting of P (phosphorus) and Sb (antimony).
6. The method for producing a photovoltaic cell according to claim 4 ,
wherein the n-type impurity-containing glass powder includes,
at least one kind of n-type impurity-containing material selected from the group consisting of P 2 O 3 , P 2 O 5 , and Sb 2 O 3 , and
at least one kind of glass component material selected from the group consisting of SiO 2 , K 2 O, Na 2 O, Li 2 O, BaO, SrO, CaO, MgO, BeO, ZnO, PbO, CdO, V 2 O 5 , SnO, ZrO 2 , TiO 2 , and MoO 3 .