IP Library › Granted Patent US 9,177,688
Granted Patent B2
US 9,177,688 · App. 13/301,943 · Granted Nov 3, 2015

Carbon nanotube-graphene hybrid transparent conductor and field effect transistor

Inventors: Ageeth A. Bol (Yorktown Heights, NY); Bhupesh Chandra (Jersey City, NJ); Amal Kasry (White Plains, NY); Ahmed Maarouf (Mohegan Lake, NY); Glenn J. Martyna (Croton on Hudson, NY); George S. Tulevski (White Plains, NY)
Assignees: International Business Machines Corporation; Egypt Nanotechnology Center
H01B1/04B82Y10/00B82Y30/00B82Y40/00C01B31/022C01B31/0438C01B31/0453C01B31/0476C23C16/26H01L29/1606H01L29/66742H01L29/778H01L29/78618H01L29/78684H01L29/78696H01L51/102H01L51/105C01B2202/00C01B2204/00H01L29/0673H01L51/0048H01L51/0545H01L51/0566Y10T428/30
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Quick Facts
Patent No.
US 9,177,688
App. No.
13/301,943
Granted
Nov 3, 2015
Kind
B2
Abstract

A nanotube-graphene hybrid film and method for forming a cleaned nanotube-graphene hybrid film. The method includes depositing nanotube film over a substrate to produce a layer of nanotube film, removing impurities from a surface of the layer of nanotube film not contacting the substrate to produce a cleaned layer of nanotube film, depositing a layer of graphene over the cleaned layer of nanotube film to produce a nanotube-graphene hybrid film, and removing impurities from a surface of the nanotube-graphene hybrid film to produce a cleaned nanotube-graphene hybrid film, wherein the hybrid film has improved electrical performance. Another method includes depositing nanotube film over a metal foil to produce a layer of nanotube film, placing the metal foil with as-deposited nanotube film in a chemical vapor deposition furnace to grow graphene on the nanotube film to form a nanotube-graphene hybrid film, and transferring the nanotube-graphene hybrid film over a substrate.

Claims (21)

1. A method for forming a cleaned nanotube-graphene hybrid film, comprising:

depositing nanotube film over a substrate to produce a uniform layer of nanotube film;

removing impurities from a surface of the uniform layer of nanotube film not contacting the substrate to produce a cleaned uniform layer of nanotube film, wherein said removing impurities from the surface of the uniform layer of nanotube film comprises:

applying an acid treatment to the layer of nanotube film and rinsing the uniform layer of nanotube film subsequent to applying the acid treatment; and

annealing the uniform layer of nanotube film, wherein said annealing comprises heating the substrate and the uniform layer of nanotube film deposited thereon in a vacuum to a temperature between approximately 80 degrees Celsius and approximately 120 degrees Celsius;

depositing a layer of graphene over the cleaned uniform layer of nanotube film to produce a nanotube-graphene hybrid film; and

removing impurities from a surface of the nanotube-graphene hybrid film to produce a cleaned nanotube-graphene hybrid film, wherein the hybrid film has improved electrical performance via decreasing nanotube resistance by increasing contact area through use of graphene as a bridge;

repeating the steps of (i) producing a uniform layer of nanotube film, (ii) producing a cleaned layer of nanotube film, (iii) producing a nanotube-graphene hybrid film, and (iv) producing a cleaned nanotube-graphene hybrid film to form a cleaned nanotube-graphene hybrid film of a desired thickness; and

chemically doping the cleaned nanotube-graphene hybrid film.

2. The method of claim 1 , wherein a layer of nanotube film comprises a layer of carbon nanotube.

3. The method of claim 1 , wherein a layer of nanotube film comprises a network of single wall carbon nanotubes.

4. The method of claim 1 , wherein depositing nanotube film over a substrate to produce a layer of nanotube film comprises performing a vacuum filtration process.

5. The method of claim 1 , wherein depositing nanotube film over a substrate to produce a layer of nanotube film comprises performing a spray deposition of the nanotube film over the substrate.

6. The method of claim 1 , wherein depositing nanotube film over a substrate to produce a layer of nanotube film comprises drop casting a nanotube solution onto the substrate.

7. The method of claim 1 , wherein depositing nanotube film over a substrate to produce a layer of nanotube film comprises performing a chemical vapor deposition growth process.

8. The method of claim 1 , wherein depositing nanotube film over a substrate to produce a layer of nanotube film comprises performing a water-surfactant solution based nanotube deposition process.

9. The method of claim 1 , wherein depositing a layer of graphene over the cleaned layer of nanotube film to produce a nanotube-graphene hybrid film comprises transferring chemical vapor deposition grown graphene.

10. The method of claim 1 , wherein depositing a layer of graphene over the cleaned layer of nanotube film to produce a nanotube-graphene hybrid film comprises spraying graphene oxide flakes suspended in a solvent and reducing the flakes to graphene flakes through liquid or gas phase reducing agents.

11. The method of claim 1 , wherein removing impurities from a surface of the nanotube-graphene hybrid film to produce a cleaned nanotube-graphene hybrid film comprises using an acid, solvent and water cleaning technique.

12. The method of claim 1 , wherein removing impurities from a surface of the nanotube-graphene hybrid film to produce a cleaned nanotube-graphene hybrid film further comprises:

annealing the nanotube-graphene hybrid film under reduced pressure to remove any dried solvent.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 13, 2015
From: INTERNATIONAL BUSINESS MACHINES CORPORATION
To: INTERNATIONAL BUSINESS MACHINES CORPORATION; EGYPT NANOTECHNOLOGY CENTER
Reel/Frame 037035/0191 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 14, 2015
From: MAAROUF, AHMED; KASRY, AMAL
To: EGYPT NANOTECHNOLOGY CENTER
Reel/Frame 036326/0551 →
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNOR PREVIOUSLY RECORDED ON REEL 027272 FRAME 0716. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT. Recorded Aug 14, 2015
From: BOL, AGEETH A.; CHANDRA, BHUPESH; MARTYNA, GLENN J.; TULEVSKI, GEORGE A.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 036354/0600 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 22, 2011
From: BOL, AGEETH A.; CHANDRA, BHUPESH; KASRY, AMAL; MAAROUF, AHMED; MARTYNA, GLENN J.; TULEVSK, GEORGE A.
To: INTERNATIONAL BUSINESS MACHINES CORPORATION
Reel/Frame 027272/0716 →
Continuity (1)
Related Publication 20130130037A1 · May 23, 2013