Substrate processing apparatus, method of manufacturing semiconductor device, and baffle structure of the substrate processing apparatus
A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.
1. A substrate processing apparatus comprising:
a reaction vessel having a tubular shape;
a cover installed at a first end of the reaction vessel;
a gas introduction port installed at the cover and having a conical shape with a diameter thereof increasing toward a lower surface of the cover;
a resonance coil wound on an outer circumference of the reaction vessel;
a radio frequency power supply configured to supply radio frequency power to the resonance coil to excite a gas introduced from the gas introduction port to the reaction vessel into a plasma state;
a first plate installed between the gas introduction port and an upper end of the resonance coil with a first gap between an outer circumference of the first plate and an inner circumference of the reaction vessel along the outer circumference of the first plate;
a second plate installed between the first plate and the upper end of the resonance coil with a second gap between an outer circumference of the second plate and the inner circumference of the reaction vessel along the outer circumference of the second plate, wherein a lower surface of the second plate is at a height that is higher than that of the upper end of the resonance coil;
a first collar installed between the cover and the first plate;
a second collar installed between the first plate and the second plate;
a substrate processing chamber installed at a second end of the reaction vessel; and
a gas exhaust part connected to the substrate processing chamber,
wherein each of the first plate and the second plate are free of holes allowing a gas to flow therethrough, and
a distance between the cover and a surface of the first plate facing the cover ranges from 1 mm to 5 mm.
2. The substrate processing apparatus according to claim 1 , wherein the first plate is fixed only to the cover by a bolt penetrating the first collar.
3. The substrate processing apparatus according to claim 2 , wherein the first plate is fixed to the cover by at least three bolts along a circumferential direction of the first plate at predetermined intervals.
4. The substrate processing apparatus according to claim 1 , wherein the cover and the first plate face each other, and the first plate and the second plate face each other.
5. The substrate processing apparatus according to claim 4 , wherein the first plate faces the gas introduction port.
6. The substrate processing apparatus according to claim 1 , wherein each of the outer circumference of the first plate and the outer circumference of the second plate is disposed without contacting the inner circumference of the reaction vessel.
7. The substrate processing apparatus according to claim 1 , wherein the first plate and the second plate have substantially a same shape.
8. The substrate processing apparatus according to claim 1 , wherein the first plate has a shape conforming to the inner circumference of the reaction vessel, and the second plate has a shape conforming to the inner circumference of the reaction vessel.
9. The substrate processing apparatus according to claim 1 , wherein a distance between surfaces of the first plate and the second plate facing each other ranges from 30 mm to 50 mm.
10. The substrate processing apparatus according to claim 1 , wherein a distance between the outer circumference of the first plate and the inner circumference of the reaction vessel ranges from 0.1 mm to 10 mm.
11. The substrate processing apparatus according to claim 1 , wherein the second plate is fixed only to the first plate by a bolt penetrating the second collar.
12. The substrate processing apparatus according to claim 1 , further comprising:
a first bolt penetrating the first collar; and
a second bolt penetrating the second collar,
wherein an upper end of the first bolt is fixed to the cover, and
a bottom end of the first bolt and an upper end of the second bolt is connected to each other.
13. The substrate processing apparatus according to claim 1 , wherein a diameter of an upper part of the first collar is larger than that of a bottom part of the first collar,
the upper part of the first collar is in contact with the cover and the first plate, and
the bottom part of the first collar is inserted in the first plate.
14. The substrate processing apparatus according to claim 1 , further comprising a gas supplying system configured to supply a gas containing at least one of argon gas and helium gas to the gas introduction port.
15. The substrate processing apparatus according to claim 1 , wherein a first collar is formed of a metal material and is in contact with both the cover and the first plate.
16. The substrate processing apparatus according to claim 15 , wherein the metal material contains aluminum.
17. A method of manufacturing a semiconductor device using a substrate processing apparatus comprising: a reaction vessel having a tubular shape; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover and having a conical shape with a diameter thereof increasing toward a lower surface of the cover; a resonance coil would on an outer circumference of the reaction vessel; a radio frequency power supply configured to supply radio frequency power to the resonance coil to excite a gas introduced from the gas introduction port to the reaction vessel into a plasma state; a first plate installed between the gas introduction port and an upper end of the coil with a first gap between an outer circumference of the first plate and an inner circumference of the reaction vessel along the outer circumference of the first plate; a second plate installed between the first plate and the upper end of the resonance coil with a second gap between an outer circumference of the second plate and the inner circumference of the reaction vessel along the outer circumference of the second plate, wherein a lower surface of the second plate is at a height that is higher than that of the upper end of the resonance coil; a first collar installed between the cover and the first plate; a second collar installed between the first plate and the second plate; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber, wherein each of the first plate and the second plate are free of holes allowing a gas to flow therethrough, and a distance between the cover and a surface of the first plate facing the cover ranges from 1 mm to 5 mm, the method comprising:
inducing a gas introduced through the gas introduction port about the coil via the first gap and the second gap;
exciting the gas into a plasma state by the coil and processing the substrate placed in the substrate processing chamber with the gas; and exhausting the gas through the gas exhaust part.