Method of producing semiconductor device
View Patent ↗Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the substrate, a second step of removing a surplus of the first reactant, a third step of supplying a second reactant to the substrate to cause a ligand-exchange reaction to change the ligand after the exchange in the first step into a reactive site, a fourth step of removing a surplus of the second reactant, and a fifth step of supplying a plasma-excited third reactant to the substrate to cause a ligand-exchange reaction to exchange a ligand which has not been exchange-reacted into the reactive site in the third step into the reactive site, wherein the first to fifth steps are repeated predetermined times.
1. A method of producing a semiconductor device comprising:
forming a thin film by:
supplying a first reactant into a processing chamber in which a substrate is accommodated to cause the first reactant to be adsorbed on a surface of the substrate;
removing any surplus of the first reactant from the processing chamber;
supplying a second reactant into the processing chamber to cause the second reactant to react with the first reactant adsorbed on the surface of the substrate to form a thin film of at least one atomic layer; and
removing any surplus of the second reactant from the processing chamber;
a plasma processing of supplying a plasma-excited gas into the processing chamber to improve a film quality of the thin film after the thin film forming; and
repeating the thin film forming and the plasma processing until a thin film having a predetermined thickness is formed.
2. The method of claim 1 wherein the plasma-excited gas is an oxygen atom-containing gas.
3. The method of claim 2 , wherein the first reactant is a gas including aluminum, the second reactant is ozone gas, the plasma-excited gas is an oxygen plasma gas, and the thin film to be formed is an aluminum oxide thin film.
4. The method of claim 1 , wherein the plasma-excited gas is a gas including nitrogen atom.
5. The method of claim 4 , wherein the first reactant is a gas including silicon, the second reactant is a gas including nitrogen, the thin film to be formed is a silicon nitride thin film, and the plasma processing is carried out between the supplying of the first reactant and the supplying of the second reactant.
6. The method of claim 1 , wherein the first reactant is a gas including silicon, the second reactant is a gas including nitrogen, the plasma-excited gas is a gas including plasma-excited nitrogen, and the thin film to be formed is a silicon nitride thin film.
7. The method of claim 6 , wherein the plasma-excited gas includes plasma-excited nitrogen gas and plasma-excited ammonia gas.
8. The method of claim 7 , wherein the plasma-excited gas includes a gas obtained by plasma-exciting a gas mixture in which nitrogen gas and ammonia gas are mixed at a ratio of 1:1 to 6:1.
9. The method of claim 7 , wherein the plasma processing is carried out under a pressure of 0.5 Torr or lower.
10. The method of claim 9 , wherein in the thin film forming, a thin film of two to five atomic layers is formed.