High frequency deflection measurement of IR absorption
An AFM based technique has been demonstrated for performing highly localized IR spectroscopy on a sample surface by using the AFM probe to detect wavelength dependent IR radiation interaction, typically absorption with the sample in the region of the tip. The tip may be configured to produce electric field enhancement when illuminated by a radiation source. This enhancement allows for significantly reduced illumination power levels resulting in improved spatial resolution by confining the sample-radiation interaction to the region of field enhancement which is highly localized to the tip.
1. A method of obtaining a measurement of interaction of infrared radiation with a sub-micron region of a sample on a sample substrate with a cantilever probe of a probe microscope, the method comprising:
a. interacting an electric field enhancing tip of the probe microscope with a region of the sample;
b. illuminating the tip and the region of the sample with a source of modulated infrared radiation;
c. enhancing an electric field induced by the infrared radiation in a region surrounding the apex of the tip;
d. measuring a probe response due to the interaction of the enhanced electric field with the sample.
2. The method of claim 1 wherein the enhanced electric field is due to at least one of plasmonic enhancement, polaritonic enhancement, and lightning rod effect.
3. The method of claim 1 wherein the detected probe response is due to absorption of infrared radiation by the sample.
4. The method of claim 1 wherein the electric field enhancement results from a metallic coating on at least one of the tip and sample substrate.
5. The method of claim 3 wherein the metallic coating comprises a metal chosen from the list: gold, silver, copper, platinum, and palladium.
6. The method of claim 1 wherein the source of modulated infrared radiation is modulated at a frequency substantially corresponding to a resonant frequency of the cantilever probe.
7. The method of claim 6 wherein the resonant frequency substantially corresponds to a contact resonant frequency of the cantilever probe.
8. The method of claim 1 wherein the source of IR radiation is a quantum cascade laser.
9. The method of claim 1 wherein the source of infrared radiation is an optical parametric oscillator.
10. The method of claim 1 wherein the source of infrared radiation comprises at least one of a globar and a Fourier Transform Infrared Spectrometer.
11. The method of claim 1 wherein source of IR radiation comprises a pulsed source.
12. The method of claim 11 wherein the source of IR radiation produces a pulse at the sample with a fluence of 10 −3 J/cm 2 per pulse.
13. The method of claim 1 further comprising the step of measuring the probe response at a plurality of wavelengths of the infrared source.
14. The method of claim 1 further comprising the step of measuring the probe response at a plurality of positions on the sample.
15. The method of claim 14 further comprising the step of creating a spatially resolved map of a signal indicative of probe response at a plurality of positions on the sample wherein the map has a spatial resolution of 20 nm or better.
16. The method of claim 1 wherein the enhancing step reduces effects of background absorption from neighboring regions of the sample that are illuminated by the source of infrared radiation but are not interacting with the probe tip apex.
17. The method of claim 1 wherein the source of IR radiation comprises a pulsed source and wherein the source of IR radiation produces a pulse at the sample with an energy of less than 100 nanojoules and preferably less than 5 nJ.
18. The method of claim 1 wherein the illuminating and enhancing steps induce a substantially continuous resonant oscillation of the cantilever probe when the infrared source is tuned to a wavelength corresponding to an infrared absorption in the sample.
19. The method of claim 18 wherein the probe response is resonantly enhanced by a quality factor (Q) of the cantilever probe.
20. The method of claim 19 wherein the cantilever quality factor is at least 30.
21. The method of claim 1 wherein the probe response results from thermal expansion of a region of a sample interacting with the tip.
22. The method of claim 1 wherein the probe response results from a transient force induced on the tip due to the interaction of the enhanced electric field with the sample.
23. The method of claim 1 wherein the infrared radiation is substantially polarized in a transverse magnetic (TM) mode.
24. The method of claim 1 wherein the sample is <20 nm in thickness.
25. The method of claim 1 wherein the probe response is a transient decaying oscillation.
26. The method of claim 25 further comprising the step of measuring a signal indicative of at least one of an amplitude, phase, frequency, and decay time of the transient decaying oscillation.
27. The method of claim 1 wherein the probe response is a substantially continuous oscillation when the infrared source is tuned to a wavelength corresponding to an infrared absorption of the sample.
28. The method of claim 27 further comprising the step of measuring a signal indicative of at least one of the amplitude, phase and frequency of the substantially continuous oscillation.
29. A method of obtaining a measurement of interaction of radiation with a sub-micron region of a sample on a sample substrate with a cantilever probe of a probe microscope, the method comprising:
a. interacting an electric field enhancing tip of the probe microscope with a region of the sample;
b. illuminating the tip and the region of the sample with a source of modulated radiation;
c. enhancing an electric field induced by the radiation in a region surrounding the apex of the tip;
d. measuring a probe response due to the interaction of the enhanced electric field with the sample.
30. The method of claim 29 wherein the radiation is selected from a wavelength region including ultraviolet, visible, infrared and terahertz.