IP Library Granted Patent US 8,465,615
Granted Patent B2
US 8,465,615 · App. 13/310,531 · Granted Jun 18, 2013

Adhesive sheet and method for manufacturing the same, semiconductor device manufacturing method and semiconductor device

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Quick Facts
Patent No.
US 8,465,615
App. No.
13/310,531
Granted
Jun 18, 2013
Kind
B2
Abstract

An adhesive sheet comprising a release substrate 10 , a substrate film 14 , and a first tacky-adhesive layer 12 placed between the release substrate 10 and the substrate film 14 , wherein an annular incision D is formed on the release substrate 10 from the surface of the first tacky-adhesive layer 12 side, the first tacky-adhesive layer 12 is laminated so as to cover the whole inner surface of the incision D in the release substrate 10 , and the incision D has a depth d of less than the thickness of the release substrate 10 and 25 μm or less.

Claims (47)

1. A method for producing a semiconductor wafer having a laminate, comprising:

peeling off a release substrate from an adhesive sheet comprising the release substrate, a substrate film, and a tacky-adhesive layer placed between the release substrate and the substrate film, to give the laminate including the substrate film and the tacky-adhesive layer; and

sticking the tacky-adhesive layer of the laminate to a semiconductor wafer,

wherein:

an annular incision has been formed in the release substrate of the adhesive sheet from the tacky-adhesive layer side of the release substrate,

the release substrate has a thickness of 30-50 μm,

the tacky-adhesive layer covers a whole inner surface of the incision in the release substrate,

the incision has a depth of more than zero, and less than 25 μm, and

a lamination of the laminate to the semiconductor wafer is continuously performed in an automatic step.

2. The method of claim 1 , wherein a value of (d/a) satisfies the following formula (I):

0<( d/a )≦0.7  (1),

wherein a (μm) is a thickness of the release substrate, and d (μm) is a depth of the incision.

3. The method of claim 1 , wherein the incision has a depth in the range of 5-15 μm.

4. A method for producing a semiconductor wafer having a laminate, comprising:

peeling off the laminate including an adhesive layer, a tacky layer and a substrate film, in an adhesive sheet comprising a release substrate, the adhesive layer, the tacky layer, and the substrate film, which are laminated in order, from the release substrate, and sticking the laminate through the adhesive layer to a semiconductor wafer to give a semiconductor wafer having the laminate,

wherein:

the adhesive layer has a pre-determined plane shape and is partly formed on the release substrate,

an incision has been formed in the release substrate from a side bringing contact with the adhesive layer along the periphery of the plane shape of the adhesive layer;

the release substrate has a thickness of 30-50 μm,

the incision has a depth of more than zero, and less than 25 μm; and

a lamination of the laminate to the semiconductor wafer is continuously performed in an automatic step.

5. The method of claim 4 , wherein a value of (d/a) satisfies the following formula (I):

0<( d/a )≦0.7  (1),

wherein a (μm) is a thickness of the release substrate, and d (μm) is a depth of the incision.

6. A method for sticking a laminate, comprising:

peeling off a release substrate from an adhesive sheet comprising the release substrate, a substrate film, and a tacky-adhesive layer placed between the release substrate and the substrate film, to give the laminate including the substrate film and the tacky-adhesive layer; and

sticking the tacky-adhesive layer of the laminate to an adherend,

wherein:

an annular incision has been formed in the release substrate from the tacky-adhesive layer side of the release substrate,

the release substrate has a thickness of 30-50 μm,

the tacky-adhesive layer covers a whole inner surface of the incision in the release substrate,

the incision has a depth of more than zero, and less than 25 μm, and

a lamination of the laminate to the adherend is continuously performed in an automatic step.

7. The method of claim 6 , wherein a value of (d/a) satisfies the following formula (I):

0<( d/a )≦0.07  (1),

wherein a (μm) is a thickness of the release substrate, and d (μm) is a depth of the incision.

8. A method for sticking a laminate, comprising:

peeling off the laminate including an adhesive layer, a tacky layer and a substrate film, in an adhesive sheet comprising a release substrate, the adhesive layer, the tacky layer, and the substrate film, which are laminated in order, from the release substrate, and sticking the laminate through the adhesive layer to an adherend to give an adherend having the laminate,

wherein:

the adhesive layer has a pre-determined plane shape and is partly formed on the release substrate,

an incision has been formed in the release substrate from a side bringing contact with the adhesive layer along the periphery of the plane shape of the adhesive layer;

the release substrate has a thickness of 30-50 μm,

the incision has a depth of more than zero, and less than 25 μm; and

a lamination of the laminate to the adherend is continuously performed in an automatic step.

9. The method of claim 8 , wherein a value of (d/a) satisfies the following formula (I):

0<( d/a )≦0.07  (1),

wherein a (μm) is a thickness of the release substrate, and d (μm) is a depth of the incision.

Assignments (4)
CHANGE OF ADDRESS Recorded Feb 14, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066599/0037 →
CHANGE OF NAME Recorded Mar 3, 2023
From: SHOWA DENKO MATERIALS CO., LTD.
To: RESONAC CORPORATION
Reel/Frame 062946/0125 →
CHANGE OF NAME Recorded Mar 2, 2023
From: HITACHI CHEMICAL COMPANY, LTD.
To: SHOWA DENKO MATERIALS CO., LTD.
Reel/Frame 062917/0865 →
NOTICE OF CHANGE OF ADDRESS OF ASSIGNEE Recorded May 21, 2013
From: HITACHI CHEMICAL COMPANY, LTD.
To: HITACHI CHEMICAL COMPANY, LTD.
Reel/Frame 030455/0100 →