IP Library Granted Patent US 8,338,858
Granted Patent B1
US 8,338,858 · App. 13/310,652 · Granted Dec 25, 2012

Time correlation system and method

Assignee: Optech Ventures, LLC
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Quick Facts
Patent No.
US 8,338,858
App. No.
13/310,652
Granted
Dec 25, 2012
Kind
B1
Abstract

A time correlated single photon counting system having a programmable delay generator triggered by a laser fire event detector. The system may be used for chemical agent detection based on Rayleigh scattering using optical time domain reflectometry techniques. The system may also be used for Raman detection using frequency to time transformations.

Claims (50)

1. A single photon detector comprising:

a first avalanche photo diode operable for receiving light from a light source to be measured and producing a first avalanche photo diode electrical output; and

a second avalanche photo diode masked from the light source to be measured and operable for producing a second avalanche photo diode electrical output,

wherein both avalanche photo diodes are gated by a gate pulse and wherein a photon detector electrical output comprises a difference between the first avalanche photo diode electrical output and the second avalanche photo diode electrical output.

2. The single photon detector according to claim 1 further comprising a comparator operable for receiving the photon detector electrical output and producing a detected photon output if the photon detector electrical output exceeds a selected threshold.

3. A single photon detector comprising:

a first avalanche photo diode operable for receiving light from a light source to be measured and producing a first avalanche photo diode electrical output; and

a second avalanche photo diode masked from the light source to be measured and operable for producing a second avalanche photo diode electrical output,

wherein both avalanche photo diodes are gated by a gate pulse and wherein a photon detector electrical output comprises a difference between the first avalanche photo diode electrical output and the second avalanche photo diode electrical output, wherein the first avalanche photo diode and the second avalanche photo diode comprise Geiger mode silicon avalanche photo diodes.

4. A single photon detector comprising:

a first avalanche photo diode operable for receiving light from a light source to be measured and producing a first avalanche photo diode electrical output; and

a second avalanche photo diode masked from the light source to be measured and operable for producing a second avalanche photo diode electrical output,

wherein both avalanche photo diodes are gated by a gate pulse and wherein a photon detector electrical output comprises a difference between the first avalanche photo diode electrical output and the second avalanche photo diode electrical output, wherein the first avalanche photo diode and the second avalanche photo diode are connected differentially and the gate pulse is applied differentially to a cathode of the first avalanche photo diode and to an anode of the second avalanche photo diode.

5. The single photon detector according to claim 4 , wherein a reverse bias voltage is applied to the first avalanche photo diode and the second avalanche photo diode at a voltage below a Geiger mode reverse bias voltage for the avalanche photo diodes.

6. A single photon detector comprising:

a first avalanche photo diode operable for receiving light from a light source to be measured and producing a first avalanche photo diode electrical output; and

a second avalanche photo diode masked from the light source to be measured and operable for producing a second avalanche photo diode electrical output,

wherein both avalanche photo diodes are gated by a gate pulse and wherein a photon detector electrical output comprises a difference between the first avalanche photo diode electrical output and the second avalanche photo diode electrical output, further comprising one or more thermo electric coolers, wherein the thermo electric coolers are configured to maintain the avalanche diodes at a selected temperature.

7. A single photon detector comprising:

a first avalanche photo diode operable for receiving light from a light source to be measured and producing a first avalanche photo diode electrical output; and

a second avalanche photo diode masked from the light source to be measured and operable for producing a second avalanche photo diode electrical output,

wherein both avalanche photo diodes are gated by a gate pulse and wherein a photon detector electrical output comprises a difference between the first avalanche photo diode electrical output and the second avalanche photo diode electrical output, further comprising one or more step recovery diodes electrically coupled to the gate pulse, wherein the step recovery diodes are configured to sharpen edges of the gate pulse.

8. A method for single photon detection comprising:

receiving light from a light source to be measured at a first avalanche photo diode, wherein the first avalanche diode produces a first avalanche photo diode electrical output;

masking light from a second avalanche photo diode, wherein the second avalanche photo diode produces a second avalanche photo diode electrical output;

simultaneously gating on the first avalanche photo diode and the second avalanche photo diode for a selected time duration; and

differentially comparing the first avalanche photo diode electrical output and the second avalanche photo diode electrical output to produce a photon detection electrical output.

9. The method according to claim 8 , further comprising:

comparing the photon detection electrical output to a selected threshold; and

outputting a detected photon signal if the photon detection electrical output exceeds the selected threshold.

10. A method for single photon detection comprising:

receiving light from a light source to be measured at a first avalanche photo diode, wherein the first avalanche diode produces a first avalanche photo diode electrical output;

masking light from a second avalanche photo diode, wherein the second avalanche photo diode produces a second avalanche photo diode electrical output

simultaneously gating on the first avalanche photo diode and the second avalanche photo diode for a selected time duration; and

differentially comparing the first avalanche photo diode electrical output and the second avalanche photo diode electrical output to produce a photon detection electrical output, wherein the first avalanche photo diode and the second avalanche photo diode comprise Geiger mode silicon avalanche photo diodes.

11. A method for single photon detection comprising:

receiving light from a light source to be measured at a first avalanche photo diode, wherein the first avalanche diode produces a first avalanche photo diode electrical output

masking light from a second avalanche photo diode, wherein the second avalanche photo diode produces a second avalanche photo diode electrical output

simultaneously gating on the first avalanche photo diode and the second avalanche photo diode for a selected time duration; and

differentially comparing the first avalanche photo diode electrical output and the second avalanche photo diode electrical output to produce a photon detection electrical output, wherein simultaneously gating the avalanche photo diodes comprises differentially gating the first avalanche photo diode and the second avalanche photo diode.

12. A method for single photon detection comprising:

receiving light from a light source to be measured at a first avalanche photo diode, wherein the first avalanche diode produces a first avalanche photo diode electrical output;

masking light from a second avalanche photo diode, wherein the second avalanche photo diode produces a second avalanche photo diode electrical output

simultaneously gating on the first avalanche photo diode and the second avalanche photo diode for a selected time duration; and

differentially comparing the first avalanche photo diode electrical output and the second avalanche photo diode electrical output to produce a photon detection electrical output, further comprising reverse biasing the first avalanche photo diode and the second avalanche photo diode at a voltage below a Geiger mode reverse bias voltage for the avalanche photo diodes.

13. A method for single photon detection comprising:

receiving light from a light source to be measured at a first avalanche photo diode, wherein the first avalanche diode produces a first avalanche photo diode electrical output

masking light from a second avalanche photo diode, wherein the second avalanche photo diode produces a second avalanche photo diode electrical output

simultaneously gating on the first avalanche photo diode and the second avalanche photo diode for a selected time duration; and

differentially comparing the first avalanche photo diode electrical output and the second avalanche photo diode electrical output to produce a photon detection electrical output, further comprising sharpening edges of a gate pulse used to gate on the first avalanche photo diode and the second avalanche photo diode.

Assignments (3)
CONFIRMATORY LICENSE Recorded Oct 6, 2016
From: INTELLIGENT OPTICAL SYSTEMS INC
To: GOVERNMENT OF THE UNITED STATES AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE
Reel/Frame 040247/0400 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 2, 2012
From: BASTIAANS, GLENN; COLE, JERRY; HANKINS, STEVE
To: INTELLIGENT OPTICAL SYSTEMS, INC.
Reel/Frame 028714/0135 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 2, 2012
From: INTELLIGENT OPTICAL SYSTEMS, INC.
To: OPTECH VENTURES, LLC
Reel/Frame 028714/0149 →
Continuity (1)
Continuation 11873337 · Oct 16, 2007