Manufacturing method of semiconductor device, and semiconductor device
Provided is a substrate processing apparatus including: a processing chamber for processing a substrate; a material supply unit for supplying a Si material, an oxidation material and a catalyst into the processing chamber; a heating unit for heating the substrate; and a controller for controlling at least the material supply unit and the heating unit, wherein the controller is configured to control the heating unit to heat the substrate with a first photoresist pattern formed thereon at a processing temperature lower than a deformation temperature of a first photoresist constituting the first photoresist pattern, and to control the material supply unit to alternately supply the silicon-containing material and the catalyst, and alternately supply the oxidation material and the catalyst into the processing chamber in a repeated manner to form on the substrate a thin film having a thickness equal to 5% of one half pitch of the first photoresist pattern.
1. A substrate processing apparatus comprising:
a processing chamber for processing a substrate;
a material supply unit for supplying a silicon-containing material, an oxidation material and a catalyst into the processing chamber;
a heating unit for heating the substrate; and
a controller for controlling at least the material supply unit and the heating unit,
wherein the is configured to control the heating unit to heat the substrate with a first photoresist pattern formed thereon at processing temperature lower than a deformation temperature of a first photoresist constituting the first photoresist pattern, and to control the material supply unit to alternately supply the silicon-containing material and the catalyst, and to alternately supply the oxidation material and the catalyst into the processing chamber in a repeated manner to form on the substrate a thin film having a thickness equal to 5% of one half pitch of the first photoresist pattern.
2. The substrate processing apparatus of claim 1 , further comprising:
a boat configured to hold a plurality of substrates while accommodated in the processing chamber.
3. The substrate processing apparatus of claim 1 , wherein the controller is configured to control the material supply unit in a manner that the thin film is formed at least on a top surface and a side wall of the first photoresist pattern.
4. The substrate processing apparatus of claim 1 , wherein the controller is configured to control the material supply unit in a manner that the thin film is formed with a spacing therein for forming a second photoresist pattern.
5. The substrate processing apparatus of claim 1 ,
wherein the substrate comprises the first photoresist pattern in plurality on a portion of the substrate, and
wherein the controller is configured to control the material supply unit in a manner that the thin film is formed at least on a top surface and a side wall of each of first photoresist pattern, and in a manner that a minimum spacing between mutually facing portions of the thin film deposited on the side wall of the first photoresist pattern in plurality is larger than a width of a second photoresist pattern.
6. The substrate processing apparatus of claim 1 , wherein the controller is configured to control the material supply unit in a manner that a second photoresist pattern is formed on a portion of the thin film without the first photoresist pattern.
7. The substrate processing apparatus of claim 1 , wherein the controller is configured to control the heating unit to heat the substrate at a processing temperature of 150° C. or less.
8. The substrate processing apparatus of claim 1 , wherein the controller is configured to control the heating unit to heat the substrate at a processing temperature of 100° C. or less.
9. The substrate processing apparatus of claim 1 , wherein the controller is configured to control the heating unit to heat the substrate at a processing temperature of 75° C. or less.
10. The substrate processing apparatus of claim 1 , wherein the thin film provides transparency to visible light.