Semiconductor device and method of manufacturing semiconductor device
A semiconductor device includes a semiconductor element; a pad electrode that is formed on the semiconductor element; an alignment mark that is formed on the semiconductor element; a connection electrode that is formed on the pad electrode; and an underfill resin that is formed to cover the connection electrode. The height of the alignment mark from the semiconductor element is greater than that of the connection electrode.
1. A semiconductor device comprising:
a semiconductor element;
a passivation layer on the semiconductor element;
a barrier layer directly on the passivation layer;
a pad electrode on the semiconductor element;
an alignment mark disposed directly on the barrier layer;
a connection electrode on the pad electrode; and
an underfill resin covering the connection electrode,
wherein,
a height of the alignment mark from a surface of the semiconductor element is greater than a height of the connection electrode from the surface of the semiconductor element.
2. The semiconductor device according to claim 1 , wherein the connection electrode includes an under bump metal formed on the pad electrode and a solder bump formed on the under bump metal.
3. The semiconductor device according to claim 2 , wherein the alignment mark and the under bump metal are formed of a same material.
4. The semiconductor device according to claim 1 , wherein a shape of the alignment mark is different from a shape of the connection electrode.
5. The semiconductor device according to claim 1 , wherein the alignment mark is formed to surround an outer peripheral portion of the semiconductor element.
6. A semiconductor device comprising:
a first electronic component including (i) a semiconductor element, (ii) a passivation layer on the semiconductor element, (iii) a barrier layer directly on the passivation layer, (iv) a pad electrode on the semiconductor element, (v) an alignment mark disposed directly on the barrier layer, (vi) a connection electrode on the pad electrode, and (vii) an underfill resin covering the connection electrode, a height of the alignment mark from a surface of the semiconductor element being greater than a height of the connection electrode from the surface of the semiconductor element; and
a second electronic component on which the first electronic component is mounted.
7. The semiconductor device according to claim 6 , wherein a difference in height between the alignment mark and the connection electrode in the first electronic component is equal to or less than a height of a connection electrode of the second electronic component.
8. A semiconductor device comprising:
a semiconductor element;
a pad electrode on the semiconductor element;
an alignment mark on the semiconductor element;
a connection electrode on the pad electrode; and
an underfill resin covering the connection electrode and the alignment mark,
wherein,
a height of the alignment mark from a surface of the semiconductor element is greater than a height of the connection electrode from the surface of the semiconductor element,
the underfill resin directly covers a top surface of the alignment mark, and
a thickness of the underfill resin is greater than the height of the alignment mark.
9. A semiconductor device comprising:
a first electronic component including (i) a semiconductor element, (ii) a pad electrode on the semiconductor element, (iii) an alignment mark on the semiconductor element, (iv) a connection electrode on the pad electrode, and (v) an underfill resin covering the connection electrode and the alignment mark, a height of the alignment mark from a surface of the semiconductor element being greater than a height of the connection electrode from the surface of the semiconductor element; and
a second electronic component on which the first electronic component is mounted,
wherein,
the underfill resin directly covers a top surface of the alignment mark, and
a thickness of the underfill resin is greater than the height of the alignment mark.
10. A semiconductor device comprising:
a first electronic component including (i) a semiconductor element, (ii) a pad electrode on the semiconductor element, (iii) an alignment mark on the semiconductor element, (iv) a connection electrode on the pad electrode, and (v) an underfill resin covering the connection electrode, a height of the alignment mark from a surface of the semiconductor element being greater than a height of the connection electrode from the surface of the semiconductor element; and
a second electronic component on which the first electronic component is mounted,
wherein,
the underfill resin is present between the alignment mark and the second electronic component.
11. The semiconductor device of claim 1 , wherein the barrier layer includes a metal layer.
12. The semiconductor device of claim 11 , wherein the metal layer contains at least one of copper (Cu) and titanium (Ti).
13. The semiconductor device of claim 6 , wherein the barrier layer includes a metal layer.
14. The semiconductor device of claim 13 , wherein the metal layer contains at least one of copper (Cu) and titanium (Ti).