IP Library Granted Patent US 8,937,425
Granted Patent B2
US 8,937,425 · App. 13/313,511 · Granted Jan 20, 2015

Mechanical resonating structures including a temperature compensation structure

Inventors: David M. Chen (Brookline, MA); Jan H. Kuypers (Cambridge, MA); Alexei Gaidarzhy (Brighton, MA); Guiti Zolfagharkhani (Brighton, MA)
Assignee: Sand 9, Inc.
H03H9/02834H03H9/02228H03H9/02448H03H9/02574H03H9/02102
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Quick Facts
Patent No.
US 8,937,425
App. No.
13/313,511
Granted
Jan 20, 2015
Kind
B2
Abstract

Mechanical resonating structures are described, as well as related devices and methods. The mechanical resonating structures may have a compensating structure for compensating temperature variations. The compensating structure may have multiple layers, one of which may have a stiffness that increases with increasing temperature and one of which may have a stiffness that decreases with increases in temperature.

Claims (34)

1. A mechanical resonating structure, comprising:

an active layer; and

a compensating structure coupled to the active layer,

wherein the compensating structure comprises first, second and third layers of materials, wherein the first and third layers of materials have a stiffness that increases with increasing temperature over a temperature range, and

wherein the mechanical resonating structure is configured to support Lamb waves.

2. The mechanical resonating structure of claim 1 , wherein the active layer comprises a piezoelectric material.

3. The mechanical resonating structure of claim 1 , wherein a ratio of a thickness of the active layer to a combined thickness of the first and third layers is between 1:1 and 1:200.

4. The mechanical resonating structure of claim 3 , wherein the ratio of the thickness of the active layer to the combined thickness of the first and third layers is between 1:1 and 1:10.

5. The mechanical resonating structure of claim 1 , wherein the temperature range is from −40° C. to 85° C.

6. A mechanical resonating structure, comprising:

an active layer; and

a compensating structure coupled to the active layer,

wherein the compensating structure comprises three layers of materials, wherein at least two of the three layers of materials have a stiffness that varies according to a change in temperature over a temperature range, and

wherein the mechanical resonating structure is configured to support Lamb waves, and

wherein each of the three layers of materials of the compensating structure is configured to vibrate in response to actuation of the active layer.

7. The mechanical resonating structure of claim 6 , wherein the active layer comprises a piezoelectric material.

8. The mechanical resonating structure of claim 6 , wherein each of the at least two of the three layers has a stiffness that increases with increases in temperature, and wherein a ratio of a thickness of the active layer to a combined thickness of the at least two of the three layers is between 1:1 and 1:200.

9. The mechanical resonating structure of claim 8 , wherein the ratio of the thickness of the active layer to the combined thickness of the at least two of the three layers is between 1:1 and 1:10.

10. A mechanical resonating structure, comprising:

an active layer; and

a multi-layer compensation structure comprising multiple layers configured to provide the mechanical resonating structure with a temperature coefficient of frequency having an absolute value less than 10 ppm/K over a temperature range from −40° C. to 85° C.

11. The mechanical resonating structure of claim 10 , wherein the multi-layer compensation structure is configured to provide the mechanical resonating structure with a temperature coefficient of frequency having an absolute value less than 6 ppm/K over the temperature range from −40° C. to 85° C.

12. The mechanical resonating structure of claim 11 , wherein the multi-layer compensation structure is configured to provide the mechanical resonating structure with a temperature coefficient of frequency having an absolute value less than 3 ppm/K over the temperature range from −40° C. to 85° C.

13. The mechanical resonating structure of claim 12 , wherein the multi-layer compensation structure is configured to provide the mechanical resonating structure with a temperature coefficient of frequency having an absolute value less than 1 ppm/K over the temperature range from −40° C. to 85° C.

14. The mechanical resonating structure of claim 10 , wherein the active layer comprises a piezoelectric material, and wherein the mechanical resonating structure is a suspended mechanical resonating structure coupled to a substrate by at least one anchor.

15. A mechanical resonating structure, comprising:

an active layer formed, at least in part, of a piezoelectric material;

a first patterned electrode disposed on a first surface of the active layer;

a second electrode formed on a second surface of the active layer; and

a multi-layer compensation structure comprising at least three layers, the multi-layer compensation structure coupled to the active layer,

wherein the mechanical resonating structure is a suspended mechanical resonating structure coupled to a substrate by at least one anchor,

wherein each of the at least three layers of the multi-layer compensation structure is configured to vibrate in response to actuation of the active layer, and

wherein the mechanical resonating structure is configured to support Lamb waves.

16. The mechanical resonating structure of claim 15 , wherein the active layer comprises aluminum nitride.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 4, 2015
From: SAND 9, INC.
To: ANALOG DEVICES, INC.
Reel/Frame 036274/0273 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 31, 2011
From: CHEN, DAVID M.; KUYPERS, JAN H.; GAIDARZHY, ALEXEI; ZOLFAGHARKHANI, GUITI
To: SAND9, INC.
Reel/Frame 027467/0152 →
Continuity (6)
Continuation 13290385 · Nov 7, 2011
Continuation 12639161 · Dec 16, 2009
Continuation 13313511
Continuation 13290405 · Nov 7, 2011
Provisional Application 61138171 · Dec 17, 2008
Related Publication 20120074810A1 · Mar 29, 2012