Method for forming memory cell transistor
A method for forming a memory cell transistor is disclosed which includes providing a substrate, forming a trench structure in the substrate, depositing a conductive substance on the surface of the substrate to form a conductive member inside the trench structure, forming one or more dielectric layers on the surface of the substrate, forming one or more first conductive layers on top of the dielectric layers, and etching the first conductive layers and the dielectric layers to form a hole structure extending through the first conductive and the dielectric layers, reaching to the substrate surface. One or more second conductive layers may be formed on top of the first conductive layers, with the second conductive layer material filling the hole structure.
1. A method for forming a memory cell transistor, comprising:
providing a substrate;
forming a trench structure in said substrate, said trench structure extends along a first direction;
depositing a conductive substance on a surface of said substrate, wherein said conductive substance at least partially occupies an inner space of said trench structure thereby forming a conductive member inside said trench structure;
forming one or more dielectric layers on the surface of said substrate, said dielectric layers covering said trench structure and said conductive member therein;
forming one or more first conductive layers on top of said dielectric layers;
etching said first conductive layers and said dielectric layers to form a hole structure; and
forming one or more second conductive layers on top of said first conductive layers, wherein said second conductive layers are deposited into and fill said hole structure thereby forming a plug; performing chemical mechanical polishing process to planarize a surface of said second conductive layers;
wherein said first conductive layers and said dielectric layers are etched before said second conductive layers are formed and after said first conductive layers are formed thereby said hole structure only extends through said first conductive layers and said dielectric layers, reaching to the surface of said substrate without extending through said second conductive layers, and said first and second conductive layers function as a bit line structure for said memory cell transistor thereby said hole structure does not extend through said bit line structure completely.
2. The method of claim 1 , wherein said dielectric layers and said first conductive layers extending along a second direction which is at an angle to said first direction, said angle being from about zero to ninety degrees.
3. The method of claim 2 , wherein said first and second directions are about perpendicular to each other.
4. The method of claim 1 , wherein said conductive member functions as a gate electrode of said memory cell transistor and a word line structure for said memory cell transistor.
5. The method of claim 1 , wherein said plug functions as a bit line contact plug for said memory cell transistor.
6. The method of claim 1 , wherein said memory cell transistor comprises a dynamic random access memory (DRAM) cell transistor.
7. The method of claim 1 , wherein depositing said conductive substance comprises forming a layer of said conductive substance on the surface of said substrate, and then selectively etching said layer of said conductive substance into said trench structure.
8. The method of claim 1 , further comprising, prior to depositing said conductive substance, forming an oxide layer on the inner surface of said trench structure, wherein said oxide layer functions as a gate dielectric for said memory cell transistor.
9. The method of claim 1 , wherein said conductive substance comprises titanium nitride, tungsten, or any combination thereof.
10. The method of claim 1 , wherein said one or more dielectric layers are formed from substance comprising silicon nitride, silicon oxide, silicon oxynitride, or any combination thereof.
11. The method of claim 1 , wherein said one or more first conductive layers are formed from substance comprising polysilicon.
12. The method of claim 1 , wherein said one or more second conductive layers are formed from a substance comprising titanium, titanium nitride, tungsten, or any combination thereof.
13. A method for forming a memory cell transistor, comprising:
providing a substrate;
forming a trench structure in said substrate, said trench structure extends along a first direction;
depositing a conductive substance on a surface of said substrate, wherein said conductive substance at least partially occupies an inner space of said trench structure thereby forming a conductive member inside said trench structure and said conductive member functions as a gate electrode of said memory cell transistor and a buried word line associated with said memory cell transistor;
forming one or more dielectric layers on the surface of said substrate, said dielectric layers covering said trench structure and said conductive member therein;
forming one or more first conductive layers on top of said dielectric layers; and
etching said first conductive layers and said dielectric layers to form a hole structure; and forming one or more second conductive layers on top of said first conductive layers, wherein said second conductive layers are deposited into and fill said hole structure thereby forming a plug; performing chemical mechanical polishing process to planarize a surface of said second conductive layers;
wherein said first conductive layers and said dielectric layers are etched before said second conductive layers are formed and after said first conductive layers are formed thereby said hole structure only extends through said first conductive layers and said dielectric layers, reaching to the surface of said substrate without extending through said second conductive layers.