VAPOR PHASE GROWTH APPARATUS
Disclosed is a rotation/revolution type vapor phase growth apparatus capable of increasing the area of a semiconductor thin film that can be vapor-phase grown at a time, without upsizing a susceptor or the like. The vapor phase growth apparatus is a horizontal vapor phase growth apparatus having a rotation/revolution mechanism and includes a bearing member 13 provided in a circular opening formed on a disk-shaped susceptor 12 , a soaking plate 14 mounted rotatably on the bearing member, an external gear member 15 mounted on the soaking plate, a ring-shaped fixed internal gear member 17 including an internal gear engaged with the external gear member, a heating unit 19 for heating a substrate 18 retained on the external gear member from a backside of the susceptor, and a flow channel 20 for guiding a raw material gas in a direction parallel to a surface of the substrate. An external diameter of the bearing member or a gear reference circle diameter of the external gear member is smaller than an external diameter of the substrate.
1 . A vapor phase growth apparatus that is a horizontal vapor phase growth apparatus having a rotation/revolution mechanism, the apparatus comprising a disk-shaped susceptor provided rotatably in a chamber, a ring-shaped bearing member provided each in a plurality of circular openings formed in a circumferential direction of an outer periphery of the susceptor, a disk-shaped soaking plate mounted each rotatably on the each bearing member, an external gear member mounted each on the each soaking plate, a ring-shaped fixed internal gear member including an internal gear engaged with the external gear member, a heating unit for heating a substrate retained on a surface of the external gear member from a backside of the susceptor, and a flow channel for guiding a raw material gas in a direction parallel to a surface of the substrate, wherein the bearing member has an external diameter smaller than an external diameter of the substrate.
2 . A vapor phase growth apparatus that is a horizontal vapor phase growth apparatus having a rotation/revolution mechanism, the apparatus comprising a disk-shaped susceptor provided rotatably in a chamber, a ring-shaped bearing member provided each in a plurality of circular openings formed in a circumferential direction of an outer periphery of the susceptor, a disk-shaped soaking plate mounted each rotatably on the each bearing member, an external gear member mounted each on the each soaking plate, a ring-shaped fixed internal gear member including an internal gear engaged with the external gear member, a heating unit for heating a substrate retained on a surface of the external gear member from a backside of the susceptor, and a flow channel for guiding a raw material gas in a direction parallel to a surface of the substrate, wherein the external gear member has a gear reference circle diameter smaller than an external diameter of the substrate.
3 . The vapor phase growth apparatus according to claim 1 , wherein a soaking space portion is provided between the soaking plate and the external gear member.
4 . The vapor phase growth apparatus according to claim 1 , wherein a nitride-based compound semiconductor thin film is grown on the surface of the substrate.
5 . The vapor phase growth apparatus according to claim 2 , wherein a soaking space portion is provided between the soaking plate and the external gear member.
6 . The vapor phase growth apparatus according to claim 2 , wherein a nitride-based compound semiconductor thin film is grown on the surface of the substrate.
7 . The vapor phase growth apparatus according to claim 3 , wherein a nitride-based compound semiconductor thin film is grown on the surface of the substrate.
8 . The vapor phase growth apparatus according to claim 5 , wherein a nitride-based compound semiconductor thin film is grown on the surface of the substrate.