Mechanisms for forming stressor regions in a semiconductor device
The embodiments of processes and structures described above provide mechanisms for improving mobility of carriers. The dislocations in the source and drain regions and the strain created by the doped epitaxial materials next to the channel region of a transistor both contribute to the strain in the channel region. As a result, the device performance is improved.
1. A semiconductor device, comprising:
a semiconductor substrate;
a gate structure disposed over a channel region of the semiconductor substrate;
a first stress region disposed in the semiconductor substrate, the first stress region including at least one dislocation; and
a second stress region disposed in the semiconductor substrate and overlying the first stress region, the second stress region including an epitaxial stress-inducing material.
2. The semiconductor device of claim 1 , wherein the first stress region is deeper within the semiconductor substrate than the second stress region.
3. The semiconductor device of claim 1 , wherein a first dislocation and a second dislocation are formed in the [111] direction.
4. The semiconductor device of claim 3 , wherein the [111] direction has an angle of about 45 to about 65 degrees, the angle being measured with respect to an axis parallel to a surface of the semiconductor substrate.
5. The semiconductor device of claim 1 , wherein the at least one dislocation extends from the first stress region through the second stress region.
6. The semiconductor device of claim 1 , wherein a first dislocation has a pinchoff point disposed in the semiconductor substrate at a depth less than about 100 nanometers, the depth being measured from a surface of the semiconductor substrate.
7. The semiconductor device of claim 6 , wherein the pinchoff point is not disposed within a channel region.
8. The semiconductor device of claim 1 , wherein the first stress region and the second stress region do not extend beyond an imaginary center line of the gate structure.
9. The semiconductor device of claim 1 , wherein the first stress region has a depth less than about 1000 Å.
10. The semiconductor device of claim 1 , wherein the second stress region has a depth in a range from about 100 Å to about 800 Å.
11. The semiconductor device of claim 1 , wherein first and second stress regions are disposed in a source or drain region next to the gate structure.
12. The semiconductor device of claim 1 , wherein a transistor including the gate structure is a n-type metal-oxide-silicon (NMOS) field-effect transistor (FET), and wherein the epitaxial stress-inducing material includes SiC, SiP, or SiCP.
13. A semiconductor device, comprising:
a semiconductor substrate;
a gate structure disposed over a channel region of the semiconductor substrate;
a first stress region disposed in the semiconductor substrate, the first stress region including at least one dislocation; and
a second stress region disposed in the semiconductor substrate and overlying the first stress region, the second stress region including an epitaxial stress-inducing material, wherein a transistor including the gate structure is a n-type metal-oxide-silicon (NMOS) field-effect transistor (FET), and wherein the epitaxial stress-inducing material includes SiC, SiP, or SiCP.
14. A semiconductor device, comprising:
a semiconductor substrate;
a gate structure disposed over a channel region of the semiconductor substrate;
a first stress region disposed in the semiconductor substrate, the first stress region including at least one dislocation; and
a second stress region disposed in the semiconductor substrate, the second stress region including an epitaxial stress-inducing material, wherein the first stress region contacts a bottom portion and sidewall portions of the second stress region.
15. The semiconductor device of claim 14 , wherein a top surface of the semiconductor substrate is below a top surface of the second stress region.
16. The semiconductor device of claim 14 , wherein a top surface of the second stress region is above a top surface of the first stress region.
17. The semiconductor device of claim 14 , wherein the at least one dislocation extends to a top surface of the second stress region.
18. The semiconductor device of claim 14 , wherein the first stressor region comprises carbon, and a carbon concentration of the first stressor region is less than about 3 atomic %.
19. The semiconductor device of claim 14 , wherein the first stressor region comprises phosphorous, and a phosphorous concentration ranges from about 5E19 cm −3 to about 5E21 cm −3 .
20. The semiconductor device of claim 14 , wherein the second stress region comprises silicon germanium (SiGe).