IP Library Granted Patent US 8,643,125
Granted Patent B2
US 8,643,125 · App. 13/327,681 · Granted Feb 4, 2014

Structure and process for microelectromechanical system-based sensor

Inventors: Lung-Tai Chen (Kaohsiung, TW); Shih-Chieh Lin (Kaohsiung, TW); Yu-Wen Hsu (Tainan, TW)
Assignee: Industrial Technology Research Institute
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Quick Facts
Patent No.
US 8,643,125
App. No.
13/327,681
Granted
Feb 4, 2014
Kind
B2
Abstract

A structure and a process for a microelectromechanical system (MEMS)-based sensor are provided. The structure for a MEMS-based sensor includes a substrate chip. A first insulating layer covers a top surface of the substrate chip. A device layer is disposed on a top surface of the first insulating layer. The device layer includes a periphery region and a sensor component region. The periphery region and a sensor component region have an air trench therebetween. The component region includes an anchor component and a moveable component. A second insulating layer is disposed on a top surface of the device layer, bridging the periphery region and a portion of the anchor component. A conductive pattern is disposed on the second insulating layer, electrically connecting to the anchor component.

Claims (13)

1. A structure for a MEMS-based sensor, comprising:

a substrate chip;

a first insulating layer covering a top surface of the substrate chip;

a device layer disposed on a top surface of the first insulating layer, wherein the device layer comprises a periphery region and a sensor component region, and the periphery region and a sensor component region have an air trench therebetween, and wherein the component region includes an anchor component and a moveable component;

a second insulating layer disposed on a top surface of the device layer, bridging the periphery region and a portion of the anchor component; and

a conductive pattern disposed on the second insulating layer, electrically connecting to the anchor component.

2. The structure for the MEMS-based sensor as claimed in claim 1 , wherein the substrate chip comprises a recess region for the moveable component to be disposed therein and is isolated from the first insulating layer.

3. The structure for the MEMS-based sensor as claimed in claim 1 , further comprising a bonding layer disposed between the substrate chip and the first insulating layer.

4. The structure for the MEMS-based sensor as claimed in claim 1 , wherein the second insulating layer extends from the periphery region to cover a top of the air trench.

5. The structure for the MEMS-based sensor as claimed in claim 1 , wherein the periphery region and the anchor component are respectively laterally adjacent to the air trench, adhered on the first insulating layer.

6. The structure for the MEMS-based sensor as claimed in claim 1 , further comprising a capping layer disposed over the sensor component region, bonding to the sensor component region, wherein the capping layer is separated from the sensor component region.

7. The structure for the MEMS-based sensor as claimed in claim 1 , wherein the substrate chip is a silicon substrate chip.

8. The structure for the MEMS-based sensor as claimed in claim 1 , wherein the periphery region surrounds the sensor component region.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 15, 2012
From: CHEN, LUNG-TAI; LIN, SHIH-CHIEH; HSU, YU-WEN
To: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
Reel/Frame 027713/0538 →
Priority Claims (1)
TW 100138026 A · Oct 20, 2011 · national
Continuity (1)
Related Publication 20130099331A1 · Apr 25, 2013