Chemical mechanical polishing slurry composition and method for producing semiconductor device using the same
A slurry composition for chemical mechanical polishing, including 0.1% to 20% by weight of an aminosilane-surface treated polishing agent; 0.001% to 5% by weight of an additive selected from amino acids, amino acid derivatives, salts thereof, and combinations thereof; 0.0001% to 0.5% by weight of a corrosion inhibitor; and 0.01% to 5% by weight of an oxidizing agent, with the balance being a solvent, is provided. The slurry composition for chemical mechanical polishing has a conspicuously high polishing rate for silicon oxide films, is capable of selectively preventing the removal of silicon nitride films, does not cause an imbalance in polishing, gives an excellent degree of planarization, has excellent stability over time and dispersion stability, causes less generation of particles and scratches, and produces very satisfactory polished surfaces of barrier metal films and oxide films.
1. A slurry composition for chemical mechanical polishing, comprising:
0.1% to 20% by weight of an aminosilane-surface treated polishing agent;
0.001% to 5% by weight of any one additive selected from the group consisting of amino acids, amino acid derivatives, salts thereof, and combinations thereof;
0.0001% to 0.5% by weight of a corrosion inhibitor; and
0.01% to 5% by weight of an oxidizing agent;
with the balance being a solvent
wherein the slurry composition for chemical mechanical polishing has a pH value of 3 to 3.9, a polishing selection ratio for silicon oxide film to silicon nitride film of 7 to 50, and a polishing rate for PETEOS of 1458 Å/min or greater.
2. The slurry composition for chemical mechanical polishing according to claim 1 , wherein the aminosilane is any one selected from the group consisting of aminopropyltrialkoxysilane, γ-aminopropyltriethoxysilane, bis(2-hydroxyethyl)-3-aminopropyltrialkoxysilane, diethylaminomethyltrialkoxysilane, (N,N-diethyl-3-aminopropyl)trialkoxysilane, 3-(N-styrylmethyl-2-aminoethylamino)-propyltrialkoxysilane, (2-N-benzylaminoethyl)-3-aminopropyltrialkoxysilane, trialkoxysilylpropyl-N,N,N-trimethylammonium chloride, N-(trialkoxysilylethyl)benzyl-N,N,N-trimethylammonium chloride, bis(methyldialkoxysilylpropyl)-N-methylamine, bis(trialkoxysilylpropyl)urea, bis(3-(trialkoxysilyl)propyl)-ethylenediamine, bis(trialkoxysilylpropyl)amine, bis(trimethoxysilylpropyl)amine, and combinations thereof.
3. The slurry composition for chemical mechanical polishing according to claim 1 , wherein the amino acid is any one selected from the group consisting of valine, leucine, isoleucine, serine, threonine, cysteine, glycine, alanine, methionine, glutamic acid, aspartic acid, glutamine, asparagine, lysine, arginine, phenylalanine, tyrosine, tryptophan, histidine, proline, derivatives thereof, salts thereof, and combinations thereof.
4. The slurry composition for chemical mechanical polishing according to claim 1 , wherein the corrosion inhibitor is any one selected from the group consisting of 1,2,4-triazole, benzotriazole, 5-methylbenzotriazole, 5-aminotetrazole, 1-alkyl-5-aminotetrazole, 5-hydroxytetrazole, 1-alkyl-5-hydroxytetrazole, tetrazole-5-thiol, imidazole, and combinations thereof.
5. The slurry composition for chemical mechanical polishing according to claim 1 , wherein the oxidizing agent is any one selected from the group consisting of hydrogen peroxide, persulfates, and combinations thereof.
6. The slurry composition for chemical mechanical polishing according to claim 1 , wherein the aminosilane-surface treated polishing agent is a colloidal silica having an average particle size of 5 to 120 nm, and contains an aminosilane in an amount of 0.001% to 1% by weight relative to the total amount of the polishing agent.
7. The slurry composition for chemical mechanical polishing according to claim 1 , further comprising any one pH adjusting agent selected from the group consisting of potassium hydroxide, ammonium hydroxide, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrabutylammonium hydroxide, nitric acid, hydrochloric acid, sulfuric acid, perchloric acid, phosphoric acid, and combinations thereof.
8. The slurry composition for chemical mechanical polishing according to claim 1 , further comprising a polishing profile improving agent containing a glycol group in an amount of 0.001% to 5% by weight relative to the total amount of the slurry composition for chemical mechanical polishing.
9. The slurry composition for chemical mechanical polishing according to claim 8 , wherein the polishing profile improving agent is any one selected from the group consisting of ethylene glycol, propylene glycol, polyethylene glycol, polypropylene glycol, and combinations thereof.
10. A method for producing a semiconductor device, the method comprising simultaneously polishing a barrier metal film, a silicon oxide film and a silicon nitride film using the slurry composition for chemical mechanical polishing according to any one of claim 1 and claims 2 to 9 .
11. The method for producing a semiconductor device according to claim 10 , wherein through silicon vias are formed by the simultaneously polishing.