Semiconductor device and method of forming the same
A semiconductor device may include, but is not limited to, a semiconductor substrate, a word line, and an isolation region. The semiconductor substrate has an active region and first and second grooves. Each of the first and second grooves extends across the active region. The first groove is wider in width than the second groove. The word line is disposed in the first groove. The isolation region is disposed in the second groove. The isolation region is narrower in width than the word line.
1. A semiconductor device comprising:
a semiconductor substrate having an active region and first and second grooves, each of the first and second grooves extending across the active region, the first groove being wider in width than the second groove;
a word line in the first groove, the word line comprising:
a first gate insulating film covering inside walls of the first groove; and
a first conductive film in the first groove, the first conductive film being separated by the first gate insulating film from the semiconductor substrate;
an isolation region in the second groove, the isolation region being narrower in width than the word line and comprising:
a second gate insulating film covering inside walls of the second groove; and
a second conductive film in the second groove, the second conductive film being separated by the second gate insulating film from the semiconductor substrate; and
a diffusion region in the active region, the diffusion region being between the first and second grooves,
wherein the second conductive film is substantially the same in its top surface level as the first conductive film, and
wherein the top surface levels of the first and second conductive film are shallower than a bottom surface level of the diffusion region.
2. The semiconductor device according to claim 1 , wherein the first gate insulating film and the second gate insulating film are made of a same insulating material.
3. The semiconductor device according to claim 2 , wherein the first conductive film is wider in width than the second conductive film.
4. The semiconductor device according to claim 3 , wherein the first and second conductive films are made of the same conductive material.
5. The semiconductor device according to claim 1 , wherein the first groove is shallower in depth than the second groove.
6. The semiconductor device according to claim 1 , wherein the first gate insulating film and the second gate insulating film have substantially the same thickness as each other.
7. A semiconductor device comprising:
an active region provided in a semiconductor substrate and extended in a first direction;
a first isolation region provided along the active region and extended in the first direction, the first isolation region having a trench filled with an insulator;
a word line region having a first groove extending in a second direction which intersects the first direction;
a second isolation region having a second groove extending in the second direction, the second groove being narrower in a width and deeper in a depth from a surface of the semiconductor substrate than the first groove;
first and second conductive films buried in lower portions of the first and second grooves respectively, each of first and second conductive films extending continuously from the active region to the first isolation region; and
a diffusion region extended downwardly from a surface of the semiconductor substrate and placed between the first and second grooves in the active region, top surfaces of each of the first and second conductive films being located above a bottom surface of the diffusion region and below the surface of the semiconductor substrate.
8. The semiconductor device according to claim 7 , wherein the first and second grooves are shallower in a depth from the surface of the semiconductor substrate than that of the trench, respectively.
9. The semiconductor device according to claim 7 , further comprising:
a first gate insulating film covering an inside wall of the first groove and isolating the first conductive film from the semiconductor substrate; and
a second gate insulating film covering an inside wall of the second groove and isolating the second conductive film from the semiconductor substrate.
10. The semiconductor device according to claim 7 , wherein the top surface of the second conductive film is substantially the same level as that of the first conductive film.
11. The semiconductor device according to claim 10 , wherein the first conductive film is wider in a width than the second conductive film.
12. The semiconductor device according to claim 11 , wherein the first conductive film comprises the same material as the second conductive film.
13. The semiconductor device according to claim 9 , wherein the first gate insulating film comprises the same material as the second gate insulating film.
14. The semiconductor device according to claim 13 , wherein the first and second gate insulating films have the same thickness each other.
15. The semiconductor device according to claim 9 , further comprising:
a first insulator covering each of the first and second conductive films and burying an upper portion of each of the first and second grooves.
16. The semiconductor device according to claim 15 , wherein the first insulating film protrudes from the surface of the semiconductor substrate.
17. The semiconductor device according to claim 16 , further comprising:
a contact plug provided between the first isolation films and connected to the diffusion region.
18. A semiconductor device comprising:
an active region provided in a semiconductor substrate and extended in a first direction;
a first isolation region provided along the active region and extended in the first direction,
the first isolation region having a trench filled with an insulator;
a word line region having a first groove extending in a second direction which intersects the first direction;
a second isolation region having a second groove extending in the second direction, the second groove being narrower in a width and deeper in a depth from a surface of the semiconductor substrate than the first groove;
a conductive film buried in a lower portion of each of the first and second grooves, the conductive film extending continuously from the active region to the first isolation region;
a gate insulating film covering an inside wall of each of the first and second grooves and isolating the conductive film from the semiconductor substrate; and
a diffusion region extended downwardly from a surface of the semiconductor substrate and placed between the first and second grooves in the active region, a top surface of conductive film being located above a bottom surface of the diffusion, region and below the surface of the semiconductor substrate.