Magnetic tunnel junction device and method for fabricating the same
A magnetic tunnel junction device includes a first electrode having a curved top surface, a magnetic tunnel junction layer formed along the top surface of the first electrode, and a second electrode formed on the magnetic tunnel junction layer.
1. A magnetic tunnel junction device, comprising:
a first electrode having a curved top surface;
a magnetic tunnel junction layer formed along the top surface of the first electrode; and
a second electrode formed on the magnetic tunnel junction,
wherein the magnetic tunnel junction layer includes:
a free layer arranged on the top surface of the first electrode;
a tunnel insulating layer arranged on a top surface of the free layer;
a pinned layer arranged on a top surface of the tunnel insulating layer; and
a pinning layer arranged on a top surface of the pinned layer.
2. The magnetic tunnel junction device as recited in claim 1 , wherein the magnetic tunnel junction layer has a cross section in a form of one selected from the group of oval, circle, and rectangular.
3. The magnetic tunnel junction device as recited in claim 1 , wherein the first electrode has one of a convex shaped structure and a dome shaped structure.
4. The magnetic tunnel junction device as recited in claim 1 , wherein a bottom part of the first electrode includes a protrusion having a cylinder shape.
5. The magnetic tunnel junction device as recited in claim 1 , wherein a top surface of the second electrode is flat by planarization.
6. A magnetic tunnel junction device, comprising:
a first electrode having a curved top surface;
a magnetic tunnel junction layer formed along the top surface of the first electrode; and
a second electrode formed on the magnetic tunnel junction,
wherein the magnetic tunnel junction layer includes:
an anti-ferromagnetic layer arranged on the first electrode;
a first ferromagnetic layer arranged on the anti-ferromagnetic layer;
a ruthenium layer arranged on the first ferromagnetic layer;
a second ferromagnetic layer arranged on the ruthenium layer;
a tunnel insulating layer arranged on the second ferromagnetic layer; and
a third ferromagnetic layer arranged on the tunnel insulating layer.
7. A magnetic tunnel junction device, comprising:
a first electrode having a curved top surface;
a magnetic tunnel junction layer formed along the top surface of the first electrode; and
a second electrode formed on the magnetic tunnel junction,
wherein the magnetic tunnel junction layer includes:
a first ferromagnetic layer arranged on the first electrode;
a ruthenium layer arranged on the first ferromagnetic layer;
a second ferromagnetic layer arranged on the ruthenium layer;
a tunnel insulating layer arranged on the second ferromagnetic layer; and
a third ferromagnetic layer arranged on the tunnel insulating layer.