IP Library › Granted Patent US 8,748,311
Granted Patent B2
US 8,748,311 · App. 13/337,943 · Granted Jun 10, 2014

Microelectronic devices and methods for filing vias in microelectronic devices

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Quick Facts
Patent No.
US 8,748,311
App. No.
13/337,943
Granted
Jun 10, 2014
Kind
B2
Abstract

Microelectronic devices and methods for filling vias and forming conductive interconnects in microfeature workpieces and dies are disclosed herein. In one embodiment, a method includes providing a microfeature workpiece having a plurality of dies and at least one passage extending through the microfeature workpiece from a first side of the microfeature workpiece to an opposite second side of the microfeature workpiece. The method can further include forming a conductive plug in the passage adjacent to the first side of the microelectronic workpiece, and depositing conductive material in the passage to at least generally fill the passage from the conductive plug to the second side of the microelectronic workpiece.

Claims (46)

1. A method of forming a conductive interconnect in a microelectronic device, the method comprising:

providing a microfeature workpiece having a plurality of dies and at least one passage of the microfeature workpiece extending through the microfeature workpiece from a first side to an opposing second side of the microfeature workpiece, the passage defining a first opening in the first side of the microfeature workpiece and a second opening in the second side of the microfeature workpiece;

applying a sealing layer to the first side of the microfeature workpiece to at least generally seal the first opening of the passage;

depositing a portion of conductive material through the second opening of the passage to at least partially fill the passage; and

removing at least a portion of the sealing layer from the first side of the microfeature workpiece to expose the conductive material in the passage.

2. The method of claim 1 wherein depositing a portion of conductive material through the second opening of the passage includes forming a plug in the passage adjacent to the sealing layer.

3. The method of claim 1 wherein depositing a portion of conductive material through the second opening of the passage includes depositing a first portion of conductive material to form a conductive plug in the passage adjacent to the sealing layer, and further comprising depositing a second portion of conductive material through the second opening of the passage, the second portion of conductive material at least generally filling the passage from the conductive plug to the second side of the microelectronic workpiece.

4. The method of claim 1 wherein depositing a portion of conductive material through the second opening of the passage includes depositing a first portion of conductive material to form a conductive plug in the passage adjacent to the sealing layer, and further comprising:

biasing the plug at an electrical potential; and

depositing a second portion of conductive material through the second opening of the passage, the second portion of conductive material at least generally filling the passage from the conductive plug to the second side of the microelectronic workpiece.

5. The method of claim 1 wherein depositing a portion of conductive material through the second opening of the passage includes depositing a first portion of conductive material to form a conductive plug in the passage adjacent to the sealing layer, and further comprising:

positioning a conductive element adjacent to the first side of the microelectronic workpiece in electrical contact with the plug;

biasing the plug at an electrical potential with the conductive element; and

depositing a second portion of conductive material through the second opening of the passage, the second portion of conductive material at least generally filling the passage from the conductive plug to the second side of the microelectronic workpiece.

6. The method of claim 1 wherein depositing a portion of conductive material through the second opening of the passage includes depositing a first portion of conductive material to form a conductive plug in the passage adjacent to the sealing layer, and further comprising:

depositing a second portion of conductive material through the second opening of the passage, the second portion of conductive material at least generally filling the passage from the conductive plug to the second side of the microelectronic workpiece; and

forming a bond-pad electrically coupled to the conductive plug.

7. A method of forming a conductive interconnect in a microelectronic device, the method comprising:

providing a microfeature workpiece having a plurality of dies and at least one passage of the microfeature workpiece extending through the microfeature workpiece from a first side to an opposing second side of the microfeature workpiece, the passage defining a first opening in the first side of the microfeature workpiece and a second opening in the second side of the microfeature workpiece;

applying a sealing layer to the first side of the microfeature workpiece to at least generally seal the first opening of the passage;

depositing a first portion of conductive material through the second opening of the passage to at least partially fill the passage and form a conductive plug in the passage adjacent to the sealing layer;

removing the sealing layer from the first side of the microfeature workpiece; and

depositing a second portion of conductive material through the second opening of the passage, the second portion of conductive material at least generally filling the passage from the conductive plug to the second side of the microelectronic workpiece.

8. A method of forming a conductive interconnect in a microelectronic device, the method comprising:

providing a microfeature workpiece having a plurality of dies and at least one passage of the microfeature workpiece extending through the microfeature workpiece from a first side to an opposing second side of the microfeature workpiece, the passage defining a first opening in the first side of the microfeature workpiece and a second opening in the second side of the microfeature workpiece;

applying a sealing layer to the first side of the microfeature workpiece to at least generally seal the first opening of the passage;

depositing a first portion of conductive material through the second opening of the passage to at least partially fill the passage and form a conductive plug in the passage adjacent to the sealing layer;

removing the sealing layer from the first side of the microfeature workpiece;

biasing the plug at an electrical potential; and

electroplating a second portion of conductive material through the second opening of the passage, the second portion of conductive material at least generally filling the passage from the conductive plug to the second side of the microelectronic workpiece.

9. A method of forming a conductive interconnect in a microelectronic device, the method comprising:

providing a microfeature workpiece having a plurality of dies and at least one passage of the microfeature workpiece extending through the microfeature workpiece from a first side to an opposing second side of the microfeature workpiece, the passage defining a first opening in the first side of the microfeature workpiece and a second opening in the second side of the microfeature workpiece;

applying a sealing layer to the first side of the microfeature workpiece to at least generally seal the first opening of the passage;

depositing a first portion of conductive material through the second opening of the passage to at least partially fill the passage and form a conductive plug in the passage adjacent to the sealing layer;

removing the sealing layer from the first side of the microfeature workpiece;

depositing a conductive layer on the first side of the microfeature workpiece in contact with the plug in the passage;

electrically biasing the conductive layer; and

depositing a second portion of conductive material through the second opening of the passage, the second portion of conductive material at least generally filling the passage from the conductive plug to the second side of the microelectronic workpiece.

10. The method of claim 9 wherein depositing a second portion of conductive material through the second opening includes electroplating a second portion of conductive material through the second opening.

11. A method of forming a conductive interconnect in a microelectronic device, the method comprising:

providing a microfeature workpiece having a plurality of dies and at least one passage, the passage extending through the microfeature workpiece from a first side to an opposing second side, the passage defining a first opening in the first side of the microfeature workpiece and a second opening in the second side of the microfeature workpiece;

positioning a conductive contact surface in contact with the first side of the microfeature workpiece, the conductive contact surface at least generally covering the first opening of the passage; biasing the conductive contact surface at an electrical potential; and

depositing conductive material through the second opening of the passage to at least partially fill the passage from the electrically-biased conductive contact surface toward the second side of the microfeature workpiece.

12. The method of claim 11 wherein depositing conductive material through the second opening of the passage includes at least generally filling the passage with the conductive material from the conductive contact surface to the second side of the microelectronic workpiece.

13. The method of claim 11 wherein depositing conductive material through the second opening of the passage includes forming a plug in the passage in contact with the conductive contact surface.

14. The method of claim 11 wherein depositing conductive material through the second opening of the passage includes electroplating conductive material through the second opening of the passage.

Assignments (7)
RELEASE OF SECURITY INTEREST Recorded Nov 12, 2019
From: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
Reel/Frame 051028/0001 →
RELEASE OF SECURITY INTEREST Recorded Oct 9, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 050937/0001 →
RELEASE OF SECURITY INTEREST Recorded Aug 23, 2018
From: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
To: MICRON TECHNOLOGY, INC.
Reel/Frame 047243/0001 →
SECURITY INTEREST Recorded Jul 13, 2018
From: MICRON TECHNOLOGY, INC.; MICRON SEMICONDUCTOR PRODUCTS, INC.
To: JPMORGAN CHASE BANK, N.A., AS COLLATERAL AGENT
Reel/Frame 047540/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REPLACE ERRONEOUSLY FILED PATENT #7358718 WITH THE CORRECT PATENT #7358178 PREVIOUSLY RECORDED ON REEL 038669 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY INTEREST. Recorded Jun 8, 2017
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 043079/0001 →
PATENT SECURITY AGREEMENT Recorded Jun 2, 2016
From: MICRON TECHNOLOGY, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC., AS COLLATERAL AGENT
Reel/Frame 038954/0001 →
SECURITY INTEREST Recorded May 12, 2016
From: MICRON TECHNOLOGY, INC.
To: U.S. BANK NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 038669/0001 →