Metal capacitor and method of making the same including dielectric layer of different mechanical strength regions
View Patent ↗A metal capacitor structure is disclosed. The metal capacitor structure includes: a dielectric layer having a first region and a second region, a dielectric constant of the dielectric layer in the second region being higher than a dielectric constant of the dielectric layer in the first region; a dual damascene metal interconnection positioned in the first region; and a damascene capacitor electrode positioned in the second region.
1. A metal capacitor structure comprising:
a dielectric layer having a first region, a second region, and a third region, wherein mechanical strength of the third region of the dielectric layer is greater than mechanical strength of the first region of the dielectric layer, and a dielectric constant of the dielectric layer in the second region being higher than a dielectric constant of the dielectric layer in the first region;
a dual damascene metal interconnection positioned in the first region; and
a damascene capacitor electrode positioned in the second region.
2. The metal capacitor structure of claim 1 , wherein the third region comprises a non-critical region.
3. The metal capacitor structure of claim 1 , wherein a cap layer is positioned on the dual damascene metal interconnection.
4. The metal capacitor structure of claim 1 , wherein the damascene capacitor electrode and the dielectric layer in the second region constitute a metal-oxide-metal (MOM) capacitor.
5. The metal capacitor structure of claim 1 , wherein the third region is a peripheral circuit region.
6. The metal capacitor structure of claim 1 , wherein the third region is a logic IC region.
7. The metal capacitor structure of claim 1 , wherein the third region is an iso-region with isolated patterns.