Photodiode array and methods of fabrication
Photodiode arrays and methods of fabrication are provided. One photodiode array includes a silicon wafer having a first surface and an opposite second surface and a plurality of conductive vias through the silicon wafer. The photodiode array further includes a patterned doped epitaxial layer on the first surface, wherein the patterned doped epitaxial layer and the substrate form a plurality of diode junctions. A patterned etching defines an array of the diode junctions.
1. A photodiode array comprising:
a silicon substrate having a first surface and an opposite second surface;
a plurality of conductive vias through the silicon substrate; and
a patterned doped epitaxial layer on the first surface, the patterned doped epitaxial layer and the substrate forming a plurality of diode junctions, wherein a patterned etching defines an array of the diode junctions, the patterned doped epitaxial layer further forming a non-conductive interconnect with and overlaying the plurality of conductive vias.
2. The photodiode array of claim 1 , wherein the silicon substrate comprises a high resistivity epitaxial layer having the first surface.
3. The photodiode array of claim 2 , wherein the silicon substrate comprises a substrate layer, the high resistivity epitaxial layer having a higher resistivity than the substrate layer, wherein the high resistivity epitaxial layer and the substrate layer have a same doping type.
4. The photodiode array of claim 1 , wherein the plurality of conductive vias comprise therein a doped poly-Silicon refill.
5. The photodiode array of claim 4 , wherein the doped poly-Silicon refill having a different doping type than the silicon substrate.
6. The photodiode array of claim 4 , wherein the doped poly-Silicon refill having a same doping type as the doped epitaxial layer on the first surface.
7. The photodiode array of claim 1 , further comprising a dielectric layer separating the plurality of conductive vias from the silicon substrate.
8. The photodiode array of claim 7 , wherein the dielectric layer comprises a silicon dioxide (SiO 2 ) layer.
9. The photodiode array of claim 1 , wherein the doped epitaxial layer electrically connects the plurality of diode junctions and the plurality of conductive vias through a non-metallic pathway formed from the non-conductive interconnect.
10. The photodiode array of claim 1 , further comprising complementary metal-oxide-semiconductor (CMOS) electronics on the second surface, the CMOS electronics electrically connected to the plurality of diode junctions with the plurality of conductive vias.
11. The photodiode array of claim 1 , wherein the silicon substrate is a multi-layer N-doped silicon and the doped epitaxial layer is P-doped.
12. The photodiode array of claim 11 , wherein the doped epitaxial layer is a P+ type doped layer.
13. The photodiode array of claim 12 , wherein the plurality of conductive vias comprise therein a doped poly-Silicon refill having a P++ type doped poly refill.
14. A detector comprising:
a silicon substrate having a first surface and an opposite second surface;
a plurality of conductive vias through the silicon substrate;
a plurality of photodiodes formed at the first surface from a doped epitaxial layer, the doped epitaxial layer further forming a non-conductive pathway to and overlaying the plurality of conductive vias such that the plurality of photodiodes are connected to the plurality of conductive vias to allow current flow from the plurality of photodiodes to the plurality of vias without a metal interconnect; and
readout electronics formed on the opposite second surface, wherein the plurality of photodiodes and the readout electronics are electrically connected by the plurality of conductive vias.
15. The detector of claim 14 , wherein the readout electronics comprise complementary metal-oxide-semiconductor (CMOS) electronics.
16. The detector of claim 14 , wherein the silicon substrate comprises a high resistivity epitaxial layer having the first surface and a substrate layer, the high resistivity epitaxial layer having a higher resistivity than the substrate layer, wherein the high resistivity epitaxial layer and the substrate layer have a same doping type.
17. The detector of claim 14 , wherein the plurality of conductive vias comprise therein a doped poly-Silicon refill having a different doping type than the silicon substrate and the doped poly-Silicon refill having a same doping type as a doped epitaxial layer on the first surface.
18. The detector of claim 14 , further comprising a dielectric layer separating the plurality of conductive vias from the silicon substrate.
19. A method for fabricating a photodiode array, the method comprising:
pre-processing a silicon substrate using a conductive through-silicon-via process to form a plurality of vias through the silicon substrate;
depositing a doped epitaxial layer on a surface of the pre-processed silicon substrate to form a plurality of diode junctions, wherein the doped epitaxial layer forms a non-conductive interconnect with and overlaying the plurality of conductive vias; and
etching a pattern on the surface to define an array of the diode junctions.
20. The method of claim 19 , further comprising fabricating complementary metal-oxide-semiconductor (CMOS) electronics on a surface of the pre-processed silicon substrate opposite the surface with the doped epitaxial layer and forming a photodiode junction using a non-ion implant process.